Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IRG4PC30FPBF

IRG4PC30FPBF

IRG4PC30 - DISCRETE IGBT WITHOUT

Infineon Technologies
2,347 -

RFQ

IRG4PC30FPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FGA40T65SHDF

FGA40T65SHDF

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
244 -

RFQ

FGA40T65SHDF

Ficha técnica

Bulk - Active Trench Field Stop 650 V 80 A 120 A 1.81V @ 15V, 40A 268 W 1.22mJ (on), 440µJ (off) Standard 68 nC 18ns/64ns 400V, 40A, 6Ohm, 15V 101 ns -55°C ~ 175°C (TJ) Through Hole
FGA4060ADF

FGA4060ADF

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
275 -

RFQ

FGA4060ADF

Ficha técnica

Bulk - Active Trench Field Stop 600 V 80 A 120 A 2.3V @ 15V, 40A 238 W 1.37mJ (on), 250µJ (off) Standard 55.5 nC 16.8ns/54.4ns 400V, 40A, 6Ohm, 15V 26 ns -55°C ~ 175°C (TJ) Through Hole
IRG4PC50KPBF

IRG4PC50KPBF

IRG4PC50 - DISCRETE IGBT WITHOUT

Infineon Technologies
205 -

RFQ

IRG4PC50KPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FGH40T65SPD-F085

FGH40T65SPD-F085

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
172 -

RFQ

FGH40T65SPD-F085

Ficha técnica

Bulk Automotive, AEC-Q101 Active NPT 650 V 80 A 120 A 2.4V @ 15V, 40A 267 W 1.16mJ (on), 270µJ (off) Standard 36 nC 18ns/35ns 400V, 40A, 6Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
FGA25S125P-SN00337

FGA25S125P-SN00337

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
412 -

RFQ

FGA25S125P-SN00337

Ficha técnica

Bulk - Active Trench Field Stop 1250 V 50 A 75 A 2.35V @ 15V, 25A 250 W 1.09mJ (on), 580µJ (off) Standard 204 nC 24ns/502ns 600V, 25A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IRGP4078DPBF

IRGP4078DPBF

IRGP4078 - DISCRETE IGBT WITH AN

International Rectifier
800 -

RFQ

IRGP4078DPBF

Ficha técnica

Bulk - Obsolete Trench 600 V 74 A 150 A 2.2V @ 15V, 50A 278 W 1.1mJ (off) Standard 92 nC -/116ns 400V, 50A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IRG8P75N65UD1PBF

IRG8P75N65UD1PBF

IRG8P75N65 - 650V 45A IGBT

International Rectifier
2,784 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IKFW50N65DH5XKSA1

IKFW50N65DH5XKSA1

HOME APPLIANCES 14

Infineon Technologies
350 -

RFQ

IKFW50N65DH5XKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRGSL4062D1

AUIRGSL4062D1

AUIRGSL4062D1 - AUTOMOTIVE IGBT

Infineon Technologies
450 -

RFQ

AUIRGSL4062D1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SGH40N60UFTU

SGH40N60UFTU

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
900 -

RFQ

SGH40N60UFTU

Ficha técnica

Bulk - Active - 600 V 40 A 160 A 2.6V @ 15V, 20A 160 W 160µJ (on), 200µJ (off) Standard 97 nC 15ns/65ns 300V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IRGP4069D-EPBF

IRGP4069D-EPBF

IRGP4069 - DISCRETE IGBT WITH AN

International Rectifier
841 -

RFQ

IRGP4069D-EPBF

Ficha técnica

Bulk - Obsolete Trench 600 V 76 A 105 A 1.85V @ 15V, 35A 268 W 390µJ (on), 632µJ (off) Standard 104 nC 46ns/105ns 400V, 35A, 10Ohm, 15V 120 ns -55°C ~ 175°C (TJ) Through Hole
RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2

RJH1DF7 - INSULATED GATE BIPOLAR

Renesas
400 -

RFQ

Bulk - Obsolete - 1350 V 60 A - 2.55V @ 15V, 35A 250 W - Standard - 58ns/144ns 600V, 35A, 5Ohm, 15V - 150°C (TJ) Through Hole
AUIRG4PC40S-E

AUIRG4PC40S-E

AUIRG4PC40 - AUTOMOTIVE IGBT DIS

Infineon Technologies
170 -

RFQ

AUIRG4PC40S-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRGP4790D-EPBF

IRGP4790D-EPBF

IRGP4790 - DISCRETE IGBT WITH AN

International Rectifier
400 -

RFQ

IRGP4790D-EPBF

Ficha técnica

Bulk - Obsolete - 650 V 140 A 225 A 2V @ 15V, 75A 455 W 2.5mJ (on), 2.2mJ (off) Standard 210 nC 50ns/200ns 400V, 75A, 10Ohm, 15V 170 ns -40°C ~ 175°C (TJ) Through Hole
SIGC109T120R3

SIGC109T120R3

INSULATED GATE BIPOLAR TRANSISTO

Infineon Technologies
471 -

RFQ

SIGC109T120R3

Ficha técnica

Bulk - Active Trench Field Stop 1200 V - 300 A 2.1V @ 15V, 100A - - Standard - - - - -55°C ~ 150°C (TJ) Surface Mount
F5L200R12N3H3BPSA1

F5L200R12N3H3BPSA1

F5L200R12 = IGBT MODULE

Infineon Technologies
2,309 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
BSM300GA160DN13CB7HOSA1

BSM300GA160DN13CB7HOSA1

BSM300GA160 - INSULATED GATE BIP

Infineon Technologies
2,154 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
FF300R17ME4

FF300R17ME4

FF300R17 - IGBT MODULE

Infineon Technologies
3,419 -

RFQ

FF300R17ME4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HGTD1N120BNS9A

HGTD1N120BNS9A

IGBT 1200V 5.3A 60W TO252AA

onsemi
3,768 -

RFQ

HGTD1N120BNS9A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active NPT 1200 V 5.3 A 6 A 2.9V @ 15V, 1A 60 W 70µJ (on), 90µJ (off) Standard 14 nC 15ns/67ns 960V, 1A, 82Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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