Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXGT6N170

IXGT6N170

IGBT 1700V 12A 75W TO268

IXYS
2,909 -

RFQ

IXGT6N170

Ficha técnica

Tube - Active NPT 1700 V 12 A 24 A 4V @ 15V, 6A 75 W 1.5mJ (off) Standard 20 nC 40ns/250ns 1360V, 6A, 33Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
APT70GR65B

APT70GR65B

IGBT 650V 134A 595W TO-247

Microchip Technology
3,084 -

RFQ

APT70GR65B

Ficha técnica

Tube - Active NPT 650 V 134 A 260 A 2.4V @ 15V, 70A 595 W 1.51mJ (on), 1.46mJ (off) Standard 305 nC 19ns/170ns 433V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
STGW40NC60V

STGW40NC60V

IGBT 600V 80A 260W TO247

STMicroelectronics
3,777 -

RFQ

STGW40NC60V

Ficha técnica

Tube PowerMESH™ Obsolete - 600 V 80 A 200 A 2.5V @ 15V, 40A 260 W 330µJ (on), 720µJ (off) Standard 214 nC 43ns/140ns 390V, 40A, 3.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
STGW25S120DF3

STGW25S120DF3

IGBT 1200V 25A TO247

STMicroelectronics
2,418 -

RFQ

STGW25S120DF3

Ficha técnica

Tube - Obsolete Trench Field Stop 1200 V 50 A 100 A 2.1V @ 15V, 25A 375 W 830µJ (on), 2.37mJ (off) Standard 80 nC 31ns/147ns 600V, 25A, 15Ohm, 15V 265 ns -55°C ~ 175°C (TJ) Through Hole
APT75GN60SDQ2G

APT75GN60SDQ2G

IGBT FIELDSTOP COMBI 600V 75A TO

Microchip Technology
2,327 -

RFQ

APT75GN60SDQ2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 155 A 225 A 1.85V @ 15V, 75A 536 W 2.5mJ (on), 2.14mJ (off) Standard 485 nC 47ns/385ns 400V, 75A, 1Ohm, 15V 25 ns -55°C ~ 175°C (TJ) Surface Mount
NGTB60N65FL2WG

NGTB60N65FL2WG

IGBT FIELD STOP 650V 100A TO247

onsemi
110 -

RFQ

NGTB60N65FL2WG

Ficha técnica

Tube - Obsolete Field Stop 650 V 100 A 240 A 2V @ 15V, 60A 595 W 1.59mJ (on), 660µJ (off) Standard 318 nC 117ns/265ns 400V, 60A, 10Ohm, 15V 96 ns -55°C ~ 175°C (TJ) Through Hole
APT50GT60BRDQ2G

APT50GT60BRDQ2G

IGBT 600V 110A 446W TO247

Microchip Technology
2,337 -

RFQ

APT50GT60BRDQ2G

Ficha técnica

Tube Thunderbolt IGBT® Active NPT 600 V 110 A 150 A 2.5V @ 15V, 50A 446 W 995µJ (on), 1070µJ (off) Standard 240 nC 14ns/240ns 400V, 50A, 5Ohm, 15V 22 ns -55°C ~ 150°C (TJ) Through Hole
FGH50N6S2D

FGH50N6S2D

IGBT 600V 75A TO247-3

onsemi
2,024 -

RFQ

FGH50N6S2D

Ficha técnica

Tube - Obsolete - 600 V 75 A 240 A 2.7V @ 15V, 30A 463 W 260µJ (on), 250µJ (off) Standard 70 nC 13ns/55ns 390V, 30A, 3Ohm, 15V 55 ns -55°C ~ 150°C (TJ) Through Hole
IXGX320N60B3

IXGX320N60B3

IGBT 600V 500A 1700W PLUS247

IXYS
3,814 -

RFQ

Tube GenX3™ Active PT 600 V 500 A 1200 A 1.6V @ 15V, 100A 1700 W 2.7mJ (on), 3.5mJ (off) Standard 585 nC 44ns/250ns 480V, 100A, 1Ohm, 15V - - Through Hole
IXYH8N250CV1HV

IXYH8N250CV1HV

IGBT 2500V 29A TO247HV

IXYS
2,758 -

RFQ

IXYH8N250CV1HV

Ficha técnica

Tube XPT™ Active - 2500 V 29 A 70 A 4V @ 15V, 8A 280 W 2.6mJ (on), 1.07mJ (off) Standard 45 nC 11ns/180ns 1250V, 8A, 15Ohm, 15V 5 ns -55°C ~ 175°C (TJ) Through Hole
IXYH12N250CV1HV

IXYH12N250CV1HV

IGBT 2500V 28A TO247HV

IXYS
3,583 -

RFQ

IXYH12N250CV1HV

Ficha técnica

Tube XPT™ Active - 2500 V 28 A 80 A 4.5V @ 15V, 12A 310 W 3.56mJ (on), 1.7mJ (off) Standard 56 nC 12ns/167ns 1250V, 12A, 10Ohm, 15V 16 ns -55°C ~ 175°C (TJ) Through Hole
IXBA16N170AHV

IXBA16N170AHV

REVERSE CONDUCTING IGBT

IXYS
2,427 -

RFQ

IXBA16N170AHV

Ficha técnica

Tube BIMOSFET™ Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 2.5mJ (off) Standard 65 nC 15ns/250ns 1360V, 10A, 10Ohm, 15V 25 ns -55°C ~ 150°C (TJ) Surface Mount
IXYB82N120C3H1

IXYB82N120C3H1

IGBT 1200V 164A 1040W PLUS264

IXYS
3,924 -

RFQ

IXYB82N120C3H1

Ficha técnica

Tube GenX3™, XPT™ Active - 1200 V 164 A 320 A 3.2V @ 15V, 82A 1040 W 4.95mJ (on), 2.78mJ (off) Standard 215 nC 29ns/192ns 600V, 80A, 2Ohm, 15V 420 ns -55°C ~ 150°C (TJ) Through Hole
IXYL40N250CV1

IXYL40N250CV1

IGBT 2.5KV 70A ISOPLUSI5-PAK

IXYS
2,775 -

RFQ

IXYL40N250CV1

Ficha técnica

Tube XPT™ Active - 2500 V 70 A 400 A 4V @ 15V, 40A 577 W 11.7mJ (on), 6.9mJ (off) Standard 270 nC 21ns/200ns 1250V, 40A, 1Ohm, 15V 210 ns -55°C ~ 175°C (TJ) Through Hole
IKU10N60RXK

IKU10N60RXK

INSULATED GATE BIPOLAR TRANSISTO

Infineon Technologies
3,925 -

RFQ

IKU10N60RXK

Ficha técnica

Bulk * Active Trench Field Stop 600 V 20 A 30 A 2.1V @ 15V, 10A 150 W 210µJ (on), 380µJ (off) Standard 64 nC 14ns/192ns 400V, 10A, 23Ohm, 15V 62 ns -40°C ~ 175°C (TJ) Through Hole
SGD04N60BUMA1

SGD04N60BUMA1

SGD04N60 - FAST IGBT IN NPT-TECH

Infineon Technologies
3,368 -

RFQ

SGD04N60BUMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NGB8207BNT4G

NGB8207BNT4G

INSULATED GATE BIPOLAR TRANSISTO

onsemi
800 -

RFQ

NGB8207BNT4G

Ficha técnica

Bulk - Obsolete - 365 V 20 A 50 A 2.6V @ 4V, 20A 165 W - Logic - - - - -55°C ~ 175°C (TJ) Surface Mount
SKP02N60XKSA1

SKP02N60XKSA1

SKP02N60 - FAST IGBT IN NPT-TECH

Infineon Technologies
3,068 -

RFQ

SKP02N60XKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NGB8204ANT4G

NGB8204ANT4G

INSULATED GATE BIPOLAR TRANSISTO

onsemi
3,235 -

RFQ

NGB8204ANT4G

Ficha técnica

Bulk - Obsolete - 430 V 18 A 50 A 2.5V @ 4V, 15A 115 W - Logic - - - - -55°C ~ 175°C (TJ) Surface Mount
IKD06N60RAATMA2

IKD06N60RAATMA2

DISCRETE SWITCHES

Infineon Technologies
807 -

RFQ

IKD06N60RAATMA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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