Transistores - IGBT - Módulos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
VS-GT50TP60N

VS-GT50TP60N

IGBT MOD 600V 85A 208W INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,606 -

RFQ

VS-GT50TP60N

Ficha técnica

Bulk - Obsolete Trench Half Bridge 600 V 85 A 208 W 2.1V @ 15V, 50A 1 mA 3.03 nF @ 30 V Standard No 175°C (TJ) Chassis Mount
VS-GT75NP120N

VS-GT75NP120N

IGBT MOD 1200V 150A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,796 -

RFQ

VS-GT75NP120N

Ficha técnica

Bulk - Obsolete - Single 1200 V 150 A 446 W 2.08V @ 15V, 75A (Typ) 1 mA 9.45 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-100MT060WDF

VS-100MT060WDF

IGBT MODULE 600V 121A 462W MTP

Vishay General Semiconductor - Diodes Division
2,165 -

RFQ

VS-100MT060WDF

Ficha técnica

Tray - Obsolete - - 600 V 121 A 462 W 2.29V @ 15V, 60A 100 µA 9.5 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount
VS-20MT050XC

VS-20MT050XC

MOD IGBT 20A 500V MTP

Vishay General Semiconductor - Diodes Division
3,435 -

RFQ

Tray - Active - - - - - - - - - No - -
VS-20MT120UFAPBF

VS-20MT120UFAPBF

IGBT MODULE 1200V 20A 240W MTP

Vishay General Semiconductor - Diodes Division
2,679 -

RFQ

VS-20MT120UFAPBF

Ficha técnica

Tray - Obsolete NPT Full Bridge Inverter 1200 V 20 A 240 W 4.66V @ 15V, 40A 250 µA 3.79 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-20MT120UFP

VS-20MT120UFP

IGBT MODULE 1200V 40A 240W MTP

Vishay General Semiconductor - Diodes Division
3,091 -

RFQ

Tray - Obsolete NPT Full Bridge Inverter 1200 V 40 A 240 W 4.66V @ 15V, 40A 250 µA 3.79 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-25MT060WFAPBF

VS-25MT060WFAPBF

IGBT MODULE 600V 69A 195W MTP

Vishay General Semiconductor - Diodes Division
3,420 -

RFQ

VS-25MT060WFAPBF

Ficha técnica

Tray - Obsolete - Full Bridge Inverter 600 V 69 A 195 W 3.25V @ 15V, 50A 250 µA 5.42 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-40MT120UHAPBF

VS-40MT120UHAPBF

IGBT MODULE 1200V 80A 463W MTP

Vishay General Semiconductor - Diodes Division
3,825 -

RFQ

Tube - Obsolete NPT Half Bridge 1200 V 80 A 463 W 4.91V @ 15V, 80A 250 µA 8.28 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-40MT120UHTAPBF

VS-40MT120UHTAPBF

IGBT MODULE 1200V 80A 463W MTP

Vishay General Semiconductor - Diodes Division
2,865 -

RFQ

Tray - Obsolete NPT Half Bridge 1200 V 80 A 463 W 4.91V @ 15V, 80A 250 µA 8.28 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-50MT060WHTAPBF

VS-50MT060WHTAPBF

IGBT MODULE 600V 114A 658W MTP

Vishay General Semiconductor - Diodes Division
2,850 -

RFQ

Tray - Obsolete - Half Bridge 600 V 114 A 658 W 3.2V @ 15V, 100A 400 µA 7.1 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-70MT060WHTAPBF

VS-70MT060WHTAPBF

IGBT MODULE 600V 100A 347W MTP

Vishay General Semiconductor - Diodes Division
3,657 -

RFQ

VS-70MT060WHTAPBF

Ficha técnica

Tray - Obsolete NPT Half Bridge 600 V 100 A 347 W 3.4V @ 15V, 140A 700 µA 8 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-70MT060WSP

VS-70MT060WSP

IGBT MODULE 600V 96A 378W MTP

Vishay General Semiconductor - Diodes Division
3,733 -

RFQ

VS-70MT060WSP

Ficha técnica

Tray - Obsolete - Single 600 V 96 A 378 W 2.15V @ 15V, 40A 100 µA 7.43 nF @ 30 V Single Phase Bridge Rectifier Yes 150°C (TJ) Chassis Mount
VS-ETF150Y65U

VS-ETF150Y65U

IGBT MOD 650V 142A EMIPAK-2B

Vishay General Semiconductor - Diodes Division
3,151 -

RFQ

VS-ETF150Y65U

Ficha técnica

Tray - Obsolete Trench Three Level Inverter 650 V 142 A 417 W 2.06V @ 15V, 100A 100 µA 6.6 nF @ 30 V Standard No 175°C (TJ) Chassis Mount
VS-GB55LA120UX

VS-GB55LA120UX

IGBT MOD 1200V 84A 431W SOT227

Vishay General Semiconductor - Diodes Division
3,864 -

RFQ

Tube HEXFRED® Obsolete NPT Single 1200 V 84 A 431 W - 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB55NA120UX

VS-GB55NA120UX

IGBT MOD 1200V 84A 431W SOT227

Vishay General Semiconductor - Diodes Division
3,867 -

RFQ

Tube HEXFRED® Obsolete NPT Single 1200 V 84 A 431 W - 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB75LA60UF

VS-GB75LA60UF

IGBT MOD 600V 109A 447W SOT227

Vishay General Semiconductor - Diodes Division
3,744 -

RFQ

Tube - Obsolete NPT Single 600 V 109 A 447 W 2V @ 15V, 35A 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB75NA60UF

VS-GB75NA60UF

IGBT MOD 600V 109A 447W SOT227

Vishay General Semiconductor - Diodes Division
3,119 -

RFQ

Tube - Obsolete NPT Single 600 V 109 A 447 W 2V @ 15V, 35A 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GT105LA120UX

VS-GT105LA120UX

IGBT MOD 1200V 134A 463W SOT227

Vishay General Semiconductor - Diodes Division
2,363 -

RFQ

Tube - Obsolete NPT Single 1200 V 134 A 463 W - 75 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GT105NA120UX

VS-GT105NA120UX

IGBT MOD 1200V 134A 463W SOT227

Vishay General Semiconductor - Diodes Division
2,459 -

RFQ

VS-GT105NA120UX

Ficha técnica

Tube - Obsolete Trench Single 1200 V 134 A 463 W - 75 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GP300TD60S

VS-GP300TD60S

IGBT MOD 600V 580A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,205 -

RFQ

VS-GP300TD60S

Ficha técnica

Tube - Last Time Buy PT, Trench Half Bridge 600 V 580 A 1136 W 1.45V @ 15V, 300A 150 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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