Transistores - IGBT - Módulos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
VS-GB200TH120N

VS-GB200TH120N

IGBT MOD 1200V 360A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,499 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 360 A 1136 W 2.35V @ 15V, 200A 5 mA 14.9 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB200TH120U

VS-GB200TH120U

IGBT MOD 1200V 330A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,784 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 330 A 1316 W 3.6V @ 15V, 200A 5 mA 16.9 nF @ 30 V Standard No 150°C (TJ) Chassis Mount
VS-GB200TS60NPBF

VS-GB200TS60NPBF

IGBT MOD 600V 209A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,420 -

RFQ

VS-GB200TS60NPBF

Ficha técnica

Bulk - Obsolete NPT Half Bridge 600 V 209 A 781 W 2.84V @ 15V, 200A 200 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB300AH120N

VS-GB300AH120N

IGBT MOD 1200V 620A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,752 -

RFQ

Bulk - Obsolete - Single 1200 V 620 A 2500 W 1.9V @ 15V, 300A (Typ) 5 mA 21 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB300LH120N

VS-GB300LH120N

IGBT MOD 1200V 500A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,498 -

RFQ

Bulk - Obsolete - Single 1200 V 500 A 1645 W 2V @ 15V, 300A (Typ) 5 mA 21.2 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GA200HS60S1

VS-GA200HS60S1

IGBT MOD 600V 480A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,248 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 480 A 830 W 1.21V @ 15V, 200A 1 mA 32.5 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA250SA60S

VS-GA250SA60S

IGBT MOD 600V 400A 961W SOT227

Vishay General Semiconductor - Diodes Division
2,742 -

RFQ

Tube - Obsolete - Single 600 V 400 A 961 W 1.66V @ 15V, 200A 1 mA 16.25 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB90SA120U

VS-GB90SA120U

IGBT MOD 1200V 149A 862W SOT227

Vishay General Semiconductor - Diodes Division
3,362 -

RFQ

Tube - Obsolete NPT Single 1200 V 149 A 862 W 3.9V @ 15V, 75A 250 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB90DA60U

VS-GB90DA60U

IGBT MOD 600V 147A 625W SOT227

Vishay General Semiconductor - Diodes Division
2,584 -

RFQ

VS-GB90DA60U

Ficha técnica

Tube - Obsolete NPT Single 600 V 147 A 625 W 2.8V @ 15V, 100A 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-CPV362M4KPBF

VS-CPV362M4KPBF

IGBT MODULE 600V 3PHASE IMS-2

Vishay General Semiconductor - Diodes Division
2,545 -

RFQ

Bulk - Obsolete - - - - - - - - - No -40°C ~ 150°C (TJ) Through Hole
VS-CPV362M4UPBF

VS-CPV362M4UPBF

IGBT MODULE 600V 7.2A 23W IMS-2

Vishay General Semiconductor - Diodes Division
2,750 -

RFQ

Bulk - Obsolete - - 600 V 7.2 A 23 W 2.2V @ 15V, 3.9A 250 µA 530 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
VS-CPV363M4FPBF

VS-CPV363M4FPBF

IGBT MODULE 600V 3PHASE IMS-2

Vishay General Semiconductor - Diodes Division
2,116 -

RFQ

Bulk - Obsolete - - - - - - - - - No -40°C ~ 150°C (TJ) Through Hole
VS-CPV363M4KPBF

VS-CPV363M4KPBF

IGBT MODULE 600V 11A 36W IMS-2

Vishay General Semiconductor - Diodes Division
2,329 -

RFQ

Bulk - Obsolete - - 600 V 11 A 36 W 2.1V @ 15V, 6A 250 µA 740 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
VS-CPV363M4UPBF

VS-CPV363M4UPBF

IGBT MODULE 600V 13A 36W IMS-2

Vishay General Semiconductor - Diodes Division
3,297 -

RFQ

Bulk - Obsolete - - 600 V 13 A 36 W 2.2V @ 15V, 6.8A 250 µA 1.1 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
VS-CPV364M4FPBF

VS-CPV364M4FPBF

IGBT MODULE 600V 27A 63W IMS-2

Vishay General Semiconductor - Diodes Division
3,500 -

RFQ

Bulk - Obsolete - - 600 V 27 A 63 W 1.5V @ 15V, 15A 250 µA 2.2 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
VS-CPV364M4UPBF

VS-CPV364M4UPBF

IGBT MODULE 600V 20A 63W IMS-2

Vishay General Semiconductor - Diodes Division
3,607 -

RFQ

Bulk - Obsolete - - 600 V 20 A 63 W 2.1V @ 15V, 10A 250 µA 2.1 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
VS-CPV362M4FPBF

VS-CPV362M4FPBF

IGBT MODULE 600V 8.8A 23W IMS-2

Vishay General Semiconductor - Diodes Division
2,025 -

RFQ

VS-CPV362M4FPBF

Ficha técnica

Bulk - Obsolete - - 600 V 8.8 A 23 W 1.7V @ 15V, 4.8A 250 µA 340 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
VS-EMF050J60U

VS-EMF050J60U

IGBT MOD 600V 88A 338W EMIPAK2

Vishay General Semiconductor - Diodes Division
3,087 -

RFQ

VS-EMF050J60U

Ficha técnica

Bulk - Obsolete - Three Level Inverter 600 V 88 A 338 W 2.1V @ 15V, 50A 100 µA 9.5 nF @ 30 V Standard No 150°C (TJ) Chassis Mount
VS-EMG050J60N

VS-EMG050J60N

IGBT MOD 600V 88A 338W EMIPAK2

Vishay General Semiconductor - Diodes Division
3,358 -

RFQ

VS-EMG050J60N

Ficha técnica

Bulk - Obsolete - Half Bridge 600 V 88 A 338 W 2.1V @ 15V, 50A 100 µA 9.5 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount
VS-ENQ030L120S

VS-ENQ030L120S

IGBT MOD 1200V 61A EMIPAK-1B

Vishay General Semiconductor - Diodes Division
3,532 -

RFQ

VS-ENQ030L120S

Ficha técnica

Bulk - Active Trench Three Level Inverter 1200 V 61 A 216 W 2.52V @ 15V, 30A 230 µA 3.34 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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