Transistores - IGBT - Módulos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
VS-ENK025C65S

VS-ENK025C65S

POWER MODULE

Vishay General Semiconductor - Diodes Division
2,623 -

RFQ

VS-ENK025C65S

Ficha técnica

Box * Active - - - - - - - - - - - -
VS-GT50YF120NT

VS-GT50YF120NT

ECONO - 4 PACK IGBT

Vishay General Semiconductor - Diodes Division
2,619 -

RFQ

VS-GT50YF120NT

Ficha técnica

Box - Active Trench Field Stop Full Bridge 1200 V 64 A 231 W 2.8V @ 15V, 50A 50 µA - Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
VS-ENW30S120T

VS-ENW30S120T

POWER MODULE

Vishay General Semiconductor - Diodes Division
2,848 -

RFQ

VS-ENW30S120T

Ficha técnica

Box * Active - - - - - - - - - - - -
VS-GT80DA60U

VS-GT80DA60U

IGBT MOD 600V 123A 454W SOT227

Vishay General Semiconductor - Diodes Division
3,969 -

RFQ

VS-GT80DA60U

Ficha técnica

Bulk FRED Pt® Active Trench Field Stop Single Switch 600 V 123 A 454 W 2.45V @ 15V, 80A 100 µA 10.8 nF @ 25 V Standard No -40°C ~ 175°C (TJ) Chassis Mount
VS-GT100TP60N

VS-GT100TP60N

IGBT MOD 600V 160A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,910 -

RFQ

VS-GT100TP60N

Ficha técnica

Bulk - Active Trench Half Bridge 600 V 160 A 417 W 2.1V @ 15V, 100A 5 mA 7.71 nF @ 30 V Standard No 175°C (TJ) Chassis Mount
VS-ETF075Y60U

VS-ETF075Y60U

IGBT MOD 600V 109A EMIPAK-2B

Vishay General Semiconductor - Diodes Division
2,588 -

RFQ

VS-ETF075Y60U

Ficha técnica

Bulk - Active Trench Three Level Inverter 600 V 100 A 294 W 1.93V @ 15V, 75A 100 µA 4.44 nF @ 30 V Standard Yes 175°C (TJ) Chassis Mount
VS-ETY020P120F

VS-ETY020P120F

IGBT MOD OUTPUT & SW EMIPAK 2B

Vishay General Semiconductor - Diodes Division
2,709 -

RFQ

Tray - Active - - - - - - - - - - - -
VS-GT300YH120N

VS-GT300YH120N

IGBT MOD 1200V 341A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,791 -

RFQ

VS-GT300YH120N

Ficha técnica

Bulk - Active Trench Half Bridge 1200 V 341 A 1042 W 2.17V @ 15V, 300A (Typ) 300 µA 36 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GT300FD060N

VS-GT300FD060N

IGBT MOD 600V 379A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,047 -

RFQ

VS-GT300FD060N

Ficha técnica

Bulk - Active Trench Field Stop Three Level Inverter 600 V 379 A 1250 W 2.5V @ 15V, 300A 250 µA 23.3 nF @ 30 V Standard No 175°C (TJ) Chassis Mount
CPV362M4F

CPV362M4F

IGBT MODULE 600V 8.8A 23W IMS-2

Vishay General Semiconductor - Diodes Division
3,010 -

RFQ

Bulk - Active - Three Phase Inverter 600 V 8.8 A 23 W 1.66V @ 15V, 8.8A 250 µA 340 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
CPV362M4K

CPV362M4K

IGBT MODULE 600V 5.7A 23W IMS-2

Vishay General Semiconductor - Diodes Division
2,725 -

RFQ

CPV362M4K

Ficha técnica

Bulk - Active - Three Phase Inverter 600 V 5.7 A 23 W 1.93V @ 15V, 3A 250 µA 450 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
CPV362M4U

CPV362M4U

IGBT MODULE 600V 7.2A 23W IMS-2

Vishay General Semiconductor - Diodes Division
2,594 -

RFQ

CPV362M4U

Ficha técnica

Bulk - Active - Three Phase Inverter 600 V 7.2 A 23 W 1.95V @ 15V, 7.2A 250 µA 530 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
CPV363M4F

CPV363M4F

IGBT MODULE 600V 16A 36W IMS-2

Vishay General Semiconductor - Diodes Division
2,796 -

RFQ

CPV363M4F

Ficha técnica

- - Obsolete - Three Phase Inverter 600 V 16 A 36 W 1.63V @ 15V, 16A 250 µA 1.1 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
CPV363M4K

CPV363M4K

IGBT MODULE 600V 11A 36W IMS-2

Vishay General Semiconductor - Diodes Division
2,198 -

RFQ

CPV363M4K

Ficha técnica

Bulk - Active - Three Phase Inverter 600 V 11 A 36 W 2V @ 15V, 11A 250 µA 740 pF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
CPV363M4U

CPV363M4U

IGBT MODULE 600V 13A 36W IMS-2

Vishay General Semiconductor - Diodes Division
2,602 -

RFQ

CPV363M4U

Ficha técnica

Bulk - Active - Three Phase Inverter 600 V 13 A 36 W 2V @ 15V, 13A 250 µA 1.1 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
CPV364M4F

CPV364M4F

IGBT MODULE 600V 27A 63W IMS-2

Vishay General Semiconductor - Diodes Division
2,414 -

RFQ

- - Obsolete - Three Phase Inverter 600 V 27 A 63 W 1.6V @ 15V, 27A 250 µA 2.2 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Through Hole
VS-CPV364M4KPBF

VS-CPV364M4KPBF

IGBT MODULE 600V 24A 63W IMS-2

Vishay General Semiconductor - Diodes Division
2,266 -

RFQ

VS-CPV364M4KPBF

Ficha técnica

Bulk - Obsolete - Three Phase Inverter 600 V 24 A 63 W 1.8V @ 15V, 24A 250 µA 1.6 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Through Hole
50MT060WH

50MT060WH

IGBT MODULE 600V 114A 658W 12MTP

Vishay General Semiconductor - Diodes Division
2,087 -

RFQ

50MT060WH

Ficha técnica

- - Obsolete PT Half Bridge 600 V 114 A 658 W 3.2V @ 15V, 100A 400 µA 7.1 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
50MT060ULS

50MT060ULS

IGBT MODULE 600V 100A 445W 10MTP

Vishay General Semiconductor - Diodes Division
3,638 -

RFQ

50MT060ULS

Ficha técnica

- - Obsolete - Single 600 V 100 A 445 W 2.55V @ 15V, 100A 250 µA 14.7 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
GB35XF120K

GB35XF120K

IGBT MODULE 1200V 50A 284W

Vishay General Semiconductor - Diodes Division
2,736 -

RFQ

GB35XF120K

Ficha técnica

- - Obsolete NPT Three Phase Inverter 1200 V 50 A 284 W 3V @ 15V, 50A 100 µA 3.475 nF @ 30 V Standard No 150°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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