Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK9275-100A,118

BUK9275-100A,118

NOW NEXPERIA BUK9275-100A - 21.7

NXP Semiconductors
2,485 -

RFQ

BUK9275-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 21.7A (Tc) 4.5V, 10V 72mOhm @ 10A, 10V 2V @ 1mA - ±10V 1690 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMCM4401VNE/S500Z

PMCM4401VNE/S500Z

NEXPERIA PMCM4401VNE - 12V, N-CH

NXP Semiconductors
2,050 -

RFQ

PMCM4401VNE/S500Z

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK9Y11-80EX

BUK9Y11-80EX

NEXPERIA BUK9Y11 - TRANSISTOR >3

NXP Semiconductors
2,973 -

RFQ

BUK9Y11-80EX

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 84A (Tc) 5V 10mOhm @ 25A, 10V 2.1V @ 1mA 44.2 nC @ 5 V ±10V 6506 pF @ 25 V - 194W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN012-80BS,118

PSMN012-80BS,118

NEXPERIA PSMN012-80BS - 74A, 80V

NXP Semiconductors
2,082 -

RFQ

PSMN012-80BS,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 74A (Tc) 10V 11mOhm @ 15A, 10V 4V @ 1mA 43 nC @ 10 V ±20V 2782 pF @ 12 V - 148W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R0-60PS,127

PSMN2R0-60PS,127

NEXPERIA PSMN2R0-60PS - 120A, 60

NXP Semiconductors
2,363 -

RFQ

PSMN2R0-60PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.2mOhm @ 25A, 10V 4V @ 1mA 137 nC @ 10 V ±20V 9997 pF @ 30 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN7R0-100PS,127

PSMN7R0-100PS,127

NEXPERIA PSMN7R0 - N-CHANNEL 100

NXP Semiconductors
3,547 -

RFQ

PSMN7R0-100PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 12mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 6686 pF @ 50 V - 269W (Tc) - Through Hole
PMZB950UPELYL

PMZB950UPELYL

NEXPERIA PMZB950UPEL - 20 V, P-C

NXP Semiconductors
2,964 -

RFQ

PMZB950UPELYL

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.4Ohm @ 500mA, 4.5V 950mV @ 250µA 2.1 nC @ 4.5 V ±8V 43 pF @ 10 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK625R0-40C,118

BUK625R0-40C,118

NEXPERIA BUK625R0-40C - 90A, 40V

NXP Semiconductors
2,267 -

RFQ

BUK625R0-40C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Ta) - 5mOhm @ 25A, 10V 2.8V @ 1mA 88 nC @ 10 V ±16V 5200 pF @ 25 V - 158W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK6C2R1-55C,118

BUK6C2R1-55C,118

NEXPERIA BUK6C2R1-55C - 228A, 55

NXP Semiconductors
2,225 -

RFQ

BUK6C2R1-55C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 228A (Tc) 10V 2.3mOhm @ 90A, 10V 2.8V @ 1mA 253 nC @ 10 V ±16V 16000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN5R0-100PS,127

PSMN5R0-100PS,127

NOW NEXPERIA PSMN5R0-100PS - 120

NXP Semiconductors
2,381 -

RFQ

PSMN5R0-100PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5mOhm @ 25A, 10V 4V @ 1mA 170 nC @ 10 V ±20V 9900 pF @ 50 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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