Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7219-55A,118

BUK7219-55A,118

NEXPERIA BUK7219 - N-CHANNEL TRE

NXP Semiconductors
894 -

RFQ

BUK7219-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 55A (Tc) 10V 19mOhm @ 25A, 10V 4V @ 1mA - ±20V 2108 pF @ 25 V - 114W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHP27NQ11T,127

PHP27NQ11T,127

NEXPERIA PHP27NQ11T - 27.6A, 110

NXP Semiconductors
4,711 -

RFQ

PHP27NQ11T,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 110 V 27.6A (Tc) 10V 50mOhm @ 14A, 10V 4V @ 1mA 30 nC @ 10 V ±20V 1240 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP23NQ11T,127

PHP23NQ11T,127

NEXPERIA PHP23NQ11T 23A, 110V, 0

NXP Semiconductors
7,180 -

RFQ

PHP23NQ11T,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 110 V 23A (Tc) 10V 70mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 830 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7660-100A,118

BUK7660-100A,118

NEXPERIA BUK7660 - N-CHANNEL TRE

NXP Semiconductors
4,800 -

RFQ

BUK7660-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tc) 10V 60mOhm @ 15A, 10V 4V @ 1mA - ±20V 1377 pF @ 25 V - 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7620-100A,118

BUK7620-100A,118

NEXPERIA BUK7620 - TRANSISTOR >3

NXP Semiconductors
3,180 -

RFQ

BUK7620-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 63A (Tc) 10V 20mOhm @ 25A, 10V 4V @ 1mA - ±20V 4373 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN8R5-100ESFQ

PSMN8R5-100ESFQ

NEXPERIA PSMN8R5 - NEXTPOWER 100

NXP Semiconductors
1,000 -

RFQ

PSMN8R5-100ESFQ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Ta) 7V, 10V 8.8mOhm @ 25A, 10V 4V @ 1mA 44.5 nC @ 10 V ±20V 3181 pF @ 50 V - 183W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK7E4R6-60E,127

BUK7E4R6-60E,127

NEXPERIA BUK7E4 - TRANSISTOR >30

NXP Semiconductors
2,920 -

RFQ

BUK7E4R6-60E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.6mOhm @ 25A, 10V 4V @ 1mA 82 nC @ 10 V ±20V 6230 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E3R1-40E,127

BUK7E3R1-40E,127

NEXPERIA BUK7E3R1-40E - 100A, 40

NXP Semiconductors
1,263 -

RFQ

BUK7E3R1-40E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 79 nC @ 10 V ±20V 6200 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9608-55A,118

BUK9608-55A,118

NEXPERIA BUK9608-55A - 125A, 55V

NXP Semiconductors
2,400 -

RFQ

BUK9608-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 25A, 10V 2V @ 1mA 92 nC @ 5 V ±15V 6021 pF @ 25 V - 253W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN015-100B,118

PSMN015-100B,118

NEXPERIA PSMN015-100B - 75A, 100

NXP Semiconductors
4,005 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Ta) 10V 15mOhm @ 25A, 10V 4V @ 1mA 90 nC @ 10 V ±20V 4900 pF @ 25 V - 300W (Ta) -55°C ~ 175°C (TJ) Surface Mount
PSMN8R7-80PS,127

PSMN8R7-80PS,127

NEXPERIA PSMN8R7 - N-CHANNEL 80

NXP Semiconductors
8,000 -

RFQ

PSMN8R7-80PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 10V 8.7mOhm @ 10A, 10V 4V @ 1mA 52 nC @ 10 V ±20V 3346 pF @ 40 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP20NQ20T,127

PHP20NQ20T,127

NEXPERIA PHP20NQ20T - 20A, 200V

NXP Semiconductors
8,796 -

RFQ

PHP20NQ20T,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 130mOhm @ 10A, 10V 4V @ 1mA 65 nC @ 10 V ±20V 2470 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ)
PHP45NQ10T,127

PHP45NQ10T,127

NEXPERIA PHP45NQ10T - 47A, 100V

NXP Semiconductors
5,250 -

RFQ

PHP45NQ10T,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 25mOhm @ 25A, 10V 4V @ 1mA 61 nC @ 10 V ±20V 2600 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ)
BUK752R3-40E,127

BUK752R3-40E,127

NEXPERIA BUK752R3-40E - 120A, 40

NXP Semiconductors
1,270 -

RFQ

BUK752R3-40E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Ta) - 2.3mOhm @ 25A, 10V 4V @ 1mA 109.2 nC @ 10 V ±20V 8500 pF @ 25 V - 293W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK769R6-80E,118

BUK769R6-80E,118

NEXPERIA BUK769R6-80E - 75A, 80V

NXP Semiconductors
486 -

RFQ

BUK769R6-80E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 9.6mOhm @ 20A, 10V 4V @ 1mA 59.8 nC @ 10 V ±20V 4682 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7E2R3-40E,127

BUK7E2R3-40E,127

NEXPERIA BUK7E2R3-40E - 120A, 40

NXP Semiconductors
3,778 -

RFQ

BUK7E2R3-40E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 25A, 10V 4V @ 1mA 109.2 nC @ 10 V ±20V 8500 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK6E2R3-40C,127

BUK6E2R3-40C,127

NEXPERIA BUK6E2R3-40C - 120A, 40

NXP Semiconductors
2,001 -

RFQ

BUK6E2R3-40C,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 25A, 10V 2.8V @ 1mA 260 nC @ 10 V ±16V 15100 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK6E3R2-55C,127

BUK6E3R2-55C,127

NEXPERIA BUK6E3R2-55C - 120A, 55

NXP Semiconductors
4,973 -

RFQ

BUK6E3R2-55C,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 3.2mOhm @ 25A, 10V 2.8V @ 1mA 258 nC @ 10 V ±16V 15300 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN070-200P,127

PSMN070-200P,127

NEXPERIA PSMN070-200P - 35A, 200

NXP Semiconductors
8,812 -

RFQ

PSMN070-200P,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 70mOhm @ 17A, 10V 4V @ 1mA 77 nC @ 10 V ±20V 4570 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E5R2-100E,127

BUK7E5R2-100E,127

NEXPERIA BUK7E5R2-100E - 120A, 1

NXP Semiconductors
473 -

RFQ

BUK7E5R2-100E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.2mOhm @ 25A, 10V 4V @ 1mA 180 nC @ 10 V ±20V 11810 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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