Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN1R8-30PL,127

PSMN1R8-30PL,127

NEXPERIA PSMN1R8-30PL - 100A, 30

NXP Semiconductors
9,000 -

RFQ

PSMN1R8-30PL,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1.8mOhm @ 25A, 10V 2.15V @ 1mA 170 nC @ 10 V ±20V 10180 pF @ 12 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN2R0-60ES,127

PSMN2R0-60ES,127

NEXPERIA PSMN2R0-60ES - 120A, 60

NXP Semiconductors
7,334 -

RFQ

PSMN2R0-60ES,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.2mOhm @ 25A, 10V 4V @ 1mA 137 nC @ 10 V ±20V 9997 pF @ 30 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN009-100P,127

PSMN009-100P,127

NEXPERIA PSMN009-100P - 75A, 100

NXP Semiconductors
291 -

RFQ

PSMN009-100P,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 8.8mOhm @ 25A, 10V 4V @ 1mA 156 nC @ 10 V ±20V 8250 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7C10-75AITE,118

BUK7C10-75AITE,118

NEXPERIA BUK7C10-75 - 75A, 75V

NXP Semiconductors
5,341 -

RFQ

BUK7C10-75AITE,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 10mOhm @ 50A, 10V 4V @ 1mA 121 nC @ 10 V ±20V 4700 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ)
BUK6C3R3-75C,118

BUK6C3R3-75C,118

NEXPERIA BUK6C3R3 - N-CHANNEL TR

NXP Semiconductors
480 -

RFQ

BUK6C3R3-75C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 181A (Tc) 10V 3.4mOhm @ 90A, 10V 2.8V @ 1mA 253 nC @ 10 V ±16V 15800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN4R3-80PS,127

PSMN4R3-80PS,127

NEXPERIA PSMN4R3-80PS - 120A, 80

NXP Semiconductors
6,706 -

RFQ

PSMN4R3-80PS,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 8161 pF @ 40 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7107-55AIE,118

BUK7107-55AIE,118

NEXPERIA BUK7107 - N-CHANNEL TRE

NXP Semiconductors
2,400 -

RFQ

BUK7107-55AIE,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 50A, 10V 4V @ 1mA 116 nC @ 10 V ±20V 4500 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN1R1-30PL,127

PSMN1R1-30PL,127

NEXPERIA PSMN1R1-30PL - 120A, 30

NXP Semiconductors
3,520 -

RFQ

PSMN1R1-30PL,127

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 4.5V, 10V 1.3mOhm @ 25A, 10V 2.2V @ 1mA 243 nC @ 10 V ±20V 14850 pF @ 15 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN6R3-120PS

PSMN6R3-120PS

PSMN6R3-120PS - N-CHANNEL 120V S

NXP Semiconductors
319 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Ta) 10V 6.7mOhm @ 25A, 10V 4V @ 1mA 207.1 nC @ 10 V ±20V 11384 pF @ 60 V - 405W (Ta) -55°C ~ 175°C (TJ) Through Hole
PMZ290UNEYL

PMZ290UNEYL

NEXPERIA PMZ290U - 20V, N-CHANNE

NXP Semiconductors
78,532 -

RFQ

PMZ290UNEYL

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 1.8V, 4.5V 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68 nC @ 4.5 V ±8V 83 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB1200UPEYL

PMZB1200UPEYL

NEXPERIA PMZB1200U - 30V, P-CHAN

NXP Semiconductors
604,195 -

RFQ

PMZB1200UPEYL

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 410mA (Ta) 1.5V, 4.5V 1.4Ohm @ 410mA, 4.5V 950mV @ 250µA 1.2 nC @ 4.5 V ±8V 43.2 pF @ 15 V - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZ950UPEYL

PMZ950UPEYL

NEXPERIA PMZ950UPE - 20V, P-CHAN

NXP Semiconductors
367,883 -

RFQ

PMZ950UPEYL

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.4Ohm @ 500mA, 4.5V 950mV @ 250µA 2.1 nC @ 4.5 V ±8V 43 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB950UPEL315

PMZB950UPEL315

NEXPERIA PMZB950UPEL - 20 V, P-C

NXP Semiconductors
54,000 -

RFQ

PMZB950UPEL315

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMXB350UPEZ

PMXB350UPEZ

NEXPERIA PMXB350UPE - 20 V, P-CH

NXP Semiconductors
770,337 -

RFQ

PMXB350UPEZ

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 1.2V, 4.5V 447mOhm @ 1.2A, 4.5V 950mV @ 250µA 2.3 nC @ 4.5 V ±8V 116 pF @ 10 V - 360mW (Ta), 5.68W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMCM4401VPEZ

PMCM4401VPEZ

NEXPERIA PMCM4401VPE - 12V, P-CH

NXP Semiconductors
163,121 -

RFQ

PMCM4401VPEZ

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.8V, 4.5V 65mOhm @ 3A, 4.5V 900mV @ 250µA 10 nC @ 4.5 V ±8V 415 pF @ 6 V - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PBHV9115TLH215

PBHV9115TLH215

NEXPERIA PBHV9115T - SMALL SIGNA

NXP Semiconductors
12,000 -

RFQ

PBHV9115TLH215

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMK50XP,518

PMK50XP,518

NEXPERIA PMK50XP - 7.9A, 20V, 0.

NXP Semiconductors
56,081 -

RFQ

PMK50XP,518

Ficha técnica

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 7.9A (Tc) 4.5V 50mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±12V 1020 pF @ 20 V - 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMCM6501UNE023

PMCM6501UNE023

NEXPERIA PMCM6501UNE - 20V, N-CH

NXP Semiconductors
90,000 -

RFQ

PMCM6501UNE023

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSP100,135

BSP100,135

NEXPERIA BSP100 - 3.5A, 30V, 0.1

NXP Semiconductors
38,330 -

RFQ

BSP100,135

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 4.5V, 10V 100mOhm @ 2.2A, 10V 2.8V @ 1mA 6 nC @ 10 V ±20V 250 pF @ 20 V - 8.3W (Tc) -65°C ~ 150°C (TJ) Surface Mount
BUK6213-30C,118

BUK6213-30C,118

NEXPERIA BUK6213-30C - 47A, 30V

NXP Semiconductors
14,600 -

RFQ

BUK6213-30C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 10V 14mOhm @ 10A, 10V 2.8V @ 1mA 19.5 nC @ 10 V ±16V 1108 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ)
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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