Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI45N06S4L08AKSA2

IPI45N06S4L08AKSA2

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
11,000 -

RFQ

IPI45N06S4L08AKSA2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IMT65R260M1HXTMA1

IMT65R260M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
3,011 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R030M1HXTMA1

IMT65R030M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,119 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R072M1HXTMA1

IMT65R072M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
3,561 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R057M1HXTMA1

IMT65R057M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
3,447 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R163M1HXTMA1

IMT65R163M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,551 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R107M1HXTMA1

IMT65R107M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,415 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R022M1HXTMA1

IMT65R022M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,422 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R039M1HXTMA1

IMT65R039M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,866 -

RFQ

IMT65R039M1HXTMA1

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BSC0303LSATMA1

BSC0303LSATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
3,063 -

RFQ

BSC0303LSATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 120 V 68A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 2.4V @ 72µA 51 nC @ 10 V ±20V 4900 pF @ 60 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMT65R083M1HXTMA1

IMT65R083M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,717 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IMT65R048M1HXTMA1

IMT65R048M1HXTMA1

SILICON CARBIDE MOSFET PG-HSOF-8

Infineon Technologies
2,396 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IPA65R190DEXKSA1

IPA65R190DEXKSA1

MOSFET

Infineon Technologies
3,830 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
IPA60R650CEE8210XKSA1

IPA60R650CEE8210XKSA1

MOSFET

Infineon Technologies
3,963 -

RFQ

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 9.9A (Tc) 10V 650mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRFPS37N50APBF

IRFPS37N50APBF

MOSFET N-CH 500V 36A SUPER247

Infineon Technologies
2,142 -

RFQ

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±30V 5579 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPDQ60R035CFD7XTMA1

IPDQ60R035CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
3,883 -

RFQ

Tape & Reel (TR) CoolMOS™ Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Surface Mount
BSS670S2LH6327XTSA1

BSS670S2LH6327XTSA1

MOSFET N-CH 55V 540MA SOT23-3

Infineon Technologies
2,533 -

RFQ

BSS670S2LH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 540mA (Ta) 4.5V, 10V 650mOhm @ 270mA, 10V 2V @ 2.7µA 2.26 nC @ 10 V ±20V 75 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD50R500CE

IPD50R500CE

IPD50R500 - 500V COOLMOS N-CHANN

Infineon Technologies
136,541 -

RFQ

IPD50R500CE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS244ZE3062ANTMA1

BTS244ZE3062ANTMA1

BTS244 - TEMPFET, AUTOMOTIVE LOW

Infineon Technologies
24,500 -

RFQ

BTS244ZE3062ANTMA1

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V - 170W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRF7421D1TRPBF

IRF7421D1TRPBF

MOSFET N-CH 30V 5.8A 8SO

Infineon Technologies
2,691 -

RFQ

IRF7421D1TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 35mOhm @ 4.1A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 510 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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