Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUXNS0306RTRL

AUXNS0306RTRL

MOSFET N-CH DPAK

Infineon Technologies
3,720 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) - - - - - - - - - - - -
IGLD60R190D1AUMA1

IGLD60R190D1AUMA1

MOSFET N-CH 600V 10A LSON-8

Infineon Technologies
2,253 -

RFQ

IGLD60R190D1AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) - - 1.6V @ 960µA - -10V 157 pF @ 400 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUXNSF2804STRL7P

AUXNSF2804STRL7P

MOSFET N-CH

Infineon Technologies
2,109 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPW90R340C3XKSA1

IPW90R340C3XKSA1

MOSFET N-CH 900V 15A TO247-3

Infineon Technologies
3,255 -

RFQ

IPW90R340C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460PBF

IRFP460PBF

MOSFET N-CH 500V 20A TO247AC

Infineon Technologies
3,394 -

RFQ

Tube HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 4200 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460APBFXKMA1

IRFP460APBFXKMA1

PLANAR >= 100V

Infineon Technologies
3,386 -

RFQ

Tube - Not For New Designs - - - - - - - - - - - - - -
IPZA60R099P7XKSA1

IPZA60R099P7XKSA1

MOSFET N-CH 600V 31A TO247-4

Infineon Technologies
3,469 -

RFQ

IPZA60R099P7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 117W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW20N60CFDFKSA1

SPW20N60CFDFKSA1

MOSFET N-CH 650V 20.7A TO247-3

Infineon Technologies
3,369 -

RFQ

SPW20N60CFDFKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 220mOhm @ 13.1A, 10V 5V @ 1mA 124 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IGOT60R042D1AUMA2

IGOT60R042D1AUMA2

GANFET N-CH

Infineon Technologies
3,640 -

RFQ

Bulk - Active N-Channel GaNFET (Gallium Nitride) 600 V - - - - - - - - - - Surface Mount
IGT40R070D1ATMA1

IGT40R070D1ATMA1

GAN HV

Infineon Technologies
2,107 -

RFQ

IGT40R070D1ATMA1

Ficha técnica

Bulk CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 400 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 382 pF @ 320 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGOT60R070D1E8220AUMA1

IGOT60R070D1E8220AUMA1

GAN HV

Infineon Technologies
3,614 -

RFQ

Bulk CoolGaN™ Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGT60R070D1E8220ATMA1

IGT60R070D1E8220ATMA1

GAN HV

Infineon Technologies
3,749 -

RFQ

Bulk CoolGaN™ Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGT60R190D1ATMA1

IGT60R190D1ATMA1

GAN HV

Infineon Technologies
3,902 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
IGO60R070D1E8220AUMA1

IGO60R070D1E8220AUMA1

GAN HV

Infineon Technologies
2,265 -

RFQ

Bulk CoolGaN™ Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF7739L2TR

AUIRF7739L2TR

MOSFET N-CH 40V 46A DIRECTFET

Infineon Technologies
3,608 -

RFQ

AUIRF7739L2TR

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 270A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW65R110CFDFKSA2

IPW65R110CFDFKSA2

MOSFET N-CH 650V 31.2A TO247-3

Infineon Technologies
2,694 -

RFQ

IPW65R110CFDFKSA2

Ficha técnica

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZ60R099C7XKSA1

IPZ60R099C7XKSA1

MOSFET N-CH 600V 22A TO247-4

Infineon Technologies
14,731 -

RFQ

IPZ60R099C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
SMBTA06E6327HTSA1

SMBTA06E6327HTSA1

AF TRANSISTORS

Infineon Technologies
180,000 -

RFQ

SMBTA06E6327HTSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD088N06N3GATMA1

IPD088N06N3GATMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies
2,402 -

RFQ

IPD088N06N3GATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 8.8mOhm @ 50A, 10V 4V @ 34µA 48 nC @ 10 V ±20V 3900 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI051N15N5AKSA1

IPI051N15N5AKSA1

MV POWER MOS

Infineon Technologies
3,864 -

RFQ

IPI051N15N5AKSA1

Ficha técnica

Bulk,Tube * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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