Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR9120NTRLPBF

IRFR9120NTRLPBF

MOSFET P-CH 100V 6.6A DPAK

Infineon Technologies
4,887 -

RFQ

IRFR9120NTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB093N04LG

IPB093N04LG

N-CHANNEL POWER MOSFET

Infineon Technologies
20,985 -

RFQ

IPB093N04LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSO303SPH

BSO303SPH

7.2A, 30V, 0.021OHM, P-CHANNEL

Infineon Technologies
2,561 -

RFQ

BSO303SPH

Ficha técnica

Bulk SIPMOS® Active P-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 21mOhm @ 9.1A, 10V 2V @ 100µA 54 nC @ 10 V ±20V 2330 pF @ 25 V - 1.56W (Ta) -55°C ~ 150°C (TJ)
BSP295L6327

BSP295L6327

SMALL-SIGNAL N-CHANNEL MOSFET

Infineon Technologies
403,478 -

RFQ

BSP295L6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPD04N60C2

SPD04N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies
47,000 -

RFQ

SPD04N60C2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC883N03LSG

BSC883N03LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
14,999 -

RFQ

BSC883N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP096N03LGHKSA1

IPP096N03LGHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
13,100 -

RFQ

IPP096N03LGHKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD40N03S4L08ATMA1

IPD40N03S4L08ATMA1

MOSFET N-CH 30V 40A TO252-31

Infineon Technologies
17,972 -

RFQ

IPD40N03S4L08ATMA1

Ficha técnica

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 8.3mOhm @ 40A, 10V 2.2V @ 13µA 20 nC @ 10 V ±16V 1520 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R950CFDATMA1

IPD65R950CFDATMA1

MOSFET N-CH 650V 3.9A TO252-3

Infineon Technologies
2,970 -

RFQ

IPD65R950CFDATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 3.9A (Tc) 10V 950mOhm @ 1.5A, 10V 4.5V @ 200µA 14.1 nC @ 10 V ±20V 380 pF @ 100 V - 36.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R950CFDATMA2

IPD65R950CFDATMA2

MOSFET N-CH 650V 3.9A TO252-3

Infineon Technologies
3,073 -

RFQ

IPD65R950CFDATMA2

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 3.9A (Tc) 10V 950mOhm @ 1.5A, 10V 4.5V @ 200µA 14.1 nC @ 10 V ±20V 380 pF @ 100 V - 36.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA65R1K5CEXKSA1

IPA65R1K5CEXKSA1

MOSFET N-CH 650V 5.2A TO220

Infineon Technologies
2,452 -

RFQ

IPA65R1K5CEXKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 130µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V Super Junction 30W (Tc) -40°C ~ 150°C (TJ) Through Hole
SPD04P10PGBTMA1

SPD04P10PGBTMA1

MOSFET P-CH 100V 4A TO252-3

Infineon Technologies
24,369 -

RFQ

SPD04P10PGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1Ohm @ 2.8A, 10V 4V @ 380µA 12 nC @ 10 V ±20V 319 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP03N60C3

SPP03N60C3

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
82,121 -

RFQ

SPP03N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC883N03MSG

BSC883N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies
73,343 -

RFQ

BSC883N03MSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPB80N03S2L05

SPB80N03S2L05

80A, 30V, N-CHANNEL, MOSFET

Infineon Technologies
72,559 -

RFQ

SPB80N03S2L05

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.9mOhm @ 55A, 10V 2V @ 110µA 89.7 nC @ 10 V ±20V 3320 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP04N60C2

SPP04N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies
19,000 -

RFQ

SPP04N60C2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC884N03MSG

BSC884N03MSG

N-CHANNEL POWER MOSFET

Infineon Technologies
14,149 -

RFQ

BSC884N03MSG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 34 V 17A (Ta), 85A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 2700 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSF050N03LQ3G

BSF050N03LQ3G

N-CHANNEL POWER MOSFET

Infineon Technologies
34,925 -

RFQ

BSF050N03LQ3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD60R280P7SE8228AUMA1

IPD60R280P7SE8228AUMA1

MOSFET N-CH 600V 12A TO252-3

Infineon Technologies
3,371 -

RFQ

Tape & Reel (TR) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 280mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 53W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD65R950C6ATMA1

IPD65R950C6ATMA1

MOSFET N-CH 650V 4.5A TO252-3

Infineon Technologies
2,686 -

RFQ

IPD65R950C6ATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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