Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC889N03LSG

BSC889N03LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
329,990 -

RFQ

BSC889N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSP324L6327

BSP324L6327

N-CHANNEL POWER MOSFET

Infineon Technologies
214,444 -

RFQ

BSP324L6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD30N06S223ATMA2

IPD30N06S223ATMA2

MOSFET N-CH 55V 30A TO252-31

Infineon Technologies
2,059 -

RFQ

IPD30N06S223ATMA2

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 23mOhm @ 21A, 10V 4V @ 50µA 32 nC @ 10 V ±20V 901 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP129L6327

BSP129L6327

N-CHANNEL POWER MOSFET

Infineon Technologies
110,655 -

RFQ

BSP129L6327

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP603S2LNT

BSP603S2LNT

N-CHANNEL POWER MOSFET

Infineon Technologies
32,813 -

RFQ

BSP603S2LNT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRLH6224TRPBF

IRLH6224TRPBF

MOSFET N-CH 20V 28A/105A 8PQFN

Infineon Technologies
3,853 -

RFQ

IRLH6224TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 28A (Ta), 105A (Tc) 2.5V, 4.5V 3mOhm @ 20A, 4.5V 1.1V @ 50µA 86 nC @ 10 V ±12V 3710 pF @ 10 V - 3.6W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IAUC64N08S5L075ATMA1

IAUC64N08S5L075ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies
3,683 -

RFQ

IAUC64N08S5L075ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tj) 4.5V, 10V 7.5mOhm @ 32A, 10V 2V @ 30µA 37 nC @ 10 V ±20V 2106 pF @ 40 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP129L6906

BSP129L6906

N-CHANNEL POWER MOSFET

Infineon Technologies
16,000 -

RFQ

BSP129L6906

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ0503NSIATMA1

BSZ0503NSIATMA1

MOSFET N-CH 30V 20A/40A TSDSON

Infineon Technologies
3,434 -

RFQ

BSZ0503NSIATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 40A (Tc) 4.5V, 10V 3.4mOhm @ 20A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1300 pF @ 15 V - 2.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0803LSATMA1

BSZ0803LSATMA1

MOSFET N-CH 100V 9A/40A TSDSON

Infineon Technologies
2,719 -

RFQ

BSZ0803LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 40A (Tc) 4.5V, 10V 14.6mOhm @ 20A, 10V 2.3V @ 23µA 15 nC @ 10 V ±20V 1300 pF @ 50 V - 2.1W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ46NLPBF

IRFZ46NLPBF

MOSFET N-CH 55V 53A TO262

Infineon Technologies
3,442 -

RFQ

IRFZ46NLPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPU80R1K2P7AKMA1

IPU80R1K2P7AKMA1

MOSFET N-CH 800V 4.5A TO251-3

Infineon Technologies
8,400 -

RFQ

IPU80R1K2P7AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPS80R1K2P7AKMA1

IPS80R1K2P7AKMA1

MOSFET N-CH 800V 4.5A TO251-3

Infineon Technologies
35,990 -

RFQ

IPS80R1K2P7AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR6215TRRPBF

IRFR6215TRRPBF

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
2,447 -

RFQ

IRFR6215TRRPBF

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSP125L6433

BSP125L6433

N-CHANNEL POWER MOSFET

Infineon Technologies
252,459 -

RFQ

BSP125L6433

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC0908NS

BSC0908NS

N-CHANNEL POWER MOSFET

Infineon Technologies
41,400 -

RFQ

BSC0908NS

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
IPL65R1K5C6SATMA1

IPL65R1K5C6SATMA1

MOSFET N-CH 650V 3A THIN-PAK

Infineon Technologies
3,909 -

RFQ

IPL65R1K5C6SATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 3A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 11 nC @ 10 V ±20V 225 pF @ 100 V - 26.6W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IAUC60N10S5L110ATMA1

IAUC60N10S5L110ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies
2,465 -

RFQ

IAUC60N10S5L110ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 11mOhm @ 30A, 10V 2.2V @ 30µA 24.1 nC @ 10 V ±20V 1665 pF @ 50 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU7746PBF

IRFU7746PBF

MOSFET N-CH 75V 56A IPAK

Infineon Technologies
2,864 -

RFQ

IRFU7746PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7456TRPBF

IRF7456TRPBF

MOSFET N-CH 20V 16A 8SO

Infineon Technologies
2,576 -

RFQ

IRF7456TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta) 2.8V, 10V 6.5mOhm @ 16A, 10V 2V @ 250µA 62 nC @ 5 V ±12V 3640 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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