Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI80P04P407AKSA1

IPI80P04P407AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies
2,532 -

RFQ

IPI80P04P407AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7.7mOhm @ 80A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P04P4L04AKSA1

IPI80P04P4L04AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies
3,742 -

RFQ

IPI80P04P4L04AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V +5V, -16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R045CPFKSA1

IPW60R045CPFKSA1

MOSFET N-CH 650V 60A TO247-3

Infineon Technologies
117 -

RFQ

IPW60R045CPFKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - 431W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R027M1HXKSA1

IMZA65R027M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
116 -

RFQ

Tube - Active - - - 59A (Tc) - - - - - - - - - -
IPW65R019C7FKSA1

IPW65R019C7FKSA1

MOSFET N-CH 650V 75A TO247-3

Infineon Technologies
279 -

RFQ

IPW65R019C7FKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19mOhm @ 58.3A, 10V 4V @ 2.92mA 215 nC @ 10 V ±20V 9900 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI80P04P4L06AKSA1

IPI80P04P4L06AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies
3,114 -

RFQ

IPI80P04P4L06AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 150µA 104 nC @ 10 V +5V, -16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P04P4L08AKSA1

IPI80P04P4L08AKSA1

MOSFET P-CH 40V 80A TO262-3

Infineon Technologies
2,346 -

RFQ

IPI80P04P4L08AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 8.2mOhm @ 80A, 10V 2.2V @ 120µA 92 nC @ 10 V +5V, -16V 5430 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL60R2K1C6SATMA1

IPL60R2K1C6SATMA1

MOSFET N-CH 600V 2.3A THIN-PAK

Infineon Technologies
176,342 -

RFQ

IPL60R2K1C6SATMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ C6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.3A (Tc) 10V 2.1Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 21.6W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL65R660E6AUMA1

IPL65R660E6AUMA1

MOSFET N-CH 650V 7A THIN-PAK

Infineon Technologies
2,386 -

RFQ

IPL65R660E6AUMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 660mOhm @ 2.1A, 10V 3.5V @ 200µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL65R725CFDAUMA1

IPL65R725CFDAUMA1

MOSFET N-CH 650V 5.8A THIN-PAK

Infineon Technologies
2,894 -

RFQ

IPL65R725CFDAUMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.8A (Tc) 10V 725mOhm @ 2.1A, 10V 4.5V @ 200µA 20 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP120P04P404AKSA1

IPP120P04P404AKSA1

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies
3,311 -

RFQ

IPP120P04P404AKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 3.8mOhm @ 100A, 10V 4V @ 340µA 205 nC @ 10 V ±20V 14790 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP65R190CFDAAKSA1

IPP65R190CFDAAKSA1

MOSFET N-CH 650V 17.5A TO220-3

Infineon Technologies
3,872 -

RFQ

IPP65R190CFDAAKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPP65R660CFDAAKSA1

IPP65R660CFDAAKSA1

MOSFET N-CH 650V 6A TO220-3

Infineon Technologies
3,427 -

RFQ

IPP65R660CFDAAKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 3.2A, 10V 4.5V @ 200µA 20 nC @ 10 V ±20V 543 pF @ 100 V - 62.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPP80P03P405AKSA1

IPP80P03P405AKSA1

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies
3,520 -

RFQ

IPP80P03P405AKSA1

Ficha técnica

Tube,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P04P407AKSA1

IPP80P04P407AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies
3,318 -

RFQ

IPP80P04P407AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7.7mOhm @ 80A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P04P4L04AKSA1

IPP80P04P4L04AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies
2,030 -

RFQ

IPP80P04P4L04AKSA1

Ficha técnica

Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2.2V @ 250µA 176 nC @ 10 V +5V, -16V 3800 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P04P4L06AKSA1

IPP80P04P4L06AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies
2,197 -

RFQ

IPP80P04P4L06AKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 6.7mOhm @ 80A, 10V 2.2V @ 150µA 104 nC @ 10 V +5V, -16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P04P4L08AKSA1

IPP80P04P4L08AKSA1

MOSFET P-CH 40V 80A TO220-3

Infineon Technologies
2,897 -

RFQ

IPP80P04P4L08AKSA1

Ficha técnica

Bulk,Tube Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 8.2mOhm @ 80A, 10V 2.2V @ 120µA 92 nC @ 10 V +5V, -16V 5430 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS65R600E6AKMA1

IPS65R600E6AKMA1

MOSFET N-CH 650V 7.3A TO251-3

Infineon Technologies
3,890 -

RFQ

IPS65R600E6AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ E6 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU60R1K4C6AKMA1

IPU60R1K4C6AKMA1

MOSFET N-CH 600V 3.2A TO251-3

Infineon Technologies
15,000 -

RFQ

IPU60R1K4C6AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ C6 Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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