Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK120N30P3

IXFK120N30P3

MOSFET N-CH 300V 120A TO264AA

IXYS
2,055 -

RFQ

IXFK120N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 27mOhm @ 60A, 10V 5V @ 4mA 150 nC @ 10 V ±20V 8630 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP64N10L2

IXTP64N10L2

MOSFET N-CH 100V 64A TO220AB

IXYS
2,797 -

RFQ

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 64A (Tc) 10V 32mOhm @ 32A, 10V 4.5V @ 250µA 100 nC @ 10 V ±20V 3620 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH68P20T

IXTH68P20T

MOSFET P-CH 200V 68A TO247

IXYS
3,792 -

RFQ

IXTH68P20T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 68A (Tc) 10V 55mOhm @ 34A, 10V 4V @ 250µA 380 nC @ 10 V ±15V 33400 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR200N10P

IXFR200N10P

MOSFET N-CH 100V 133A ISOPLUS247

IXYS
2,055 -

RFQ

IXFR200N10P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 133A (Tc) 10V 9mOhm @ 100A, 10V 5V @ 8mA 235 nC @ 10 V ±20V 7600 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH220N20X4

IXTH220N20X4

MOSFET N-CH 200V 220A X4 TO-247

IXYS
2,407 -

RFQ

IXTH220N20X4

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 5.5mOhm @ 110A, 10V 4.5V @ 250µA 157 nC @ 10 V ±20V 12300 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT220N20X4HV

IXTT220N20X4HV

MOSFET N-CH 200V 220A X4 TO268HV

IXYS
3,870 -

RFQ

IXTT220N20X4HV

Ficha técnica

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 5.5mOhm @ 110A, 10V 4.5V @ 250µA 157 nC @ 10 V ±20V 12300 pF @ 25 V - 800W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTQ30N60L2

IXTQ30N60L2

MOSFET N-CH 600V 30A TO3P

IXYS
273 -

RFQ

IXTQ30N60L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 240mOhm @ 15A, 10V 4.5V @ 250µA 335 nC @ 10 V ±20V 10700 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH150N20T

IXFH150N20T

MOSFET N-CH 200V 150A TO247AD

IXYS
3,029 -

RFQ

IXFH150N20T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 150A (Tc) 10V 15mOhm @ 75A, 10V 5V @ 4mA 177 nC @ 10 V ±20V 11700 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH80N65X2-4

IXFH80N65X2-4

MOSFET N-CH 650V 80A TO247-4L

IXYS
3,870 -

RFQ

IXFH80N65X2-4

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 38mOhm @ 500mA, 10V 5V @ 4mA 140 nC @ 10 V ±30V 8300 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH110N10L2

IXTH110N10L2

MOSFET N-CH 100V 110A TO247

IXYS
2,626 -

RFQ

IXTH110N10L2

Ficha técnica

Bulk Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 18mOhm @ 500mA, 10V 4.5V @ 250µA 260 nC @ 10 V ±20V 10500 pF @ 25 V - 600W (Tc) - Through Hole
IXTK102N65X2

IXTK102N65X2

MOSFET N-CH 650V 102A TO264

IXYS
3,040 -

RFQ

IXTK102N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 102A (Tc) 10V 30mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK150N30P3

IXFK150N30P3

MOSFET N-CH 300V 150A TO264AA

IXYS
3,498 -

RFQ

IXFK150N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 19mOhm @ 75A, 10V 5V @ 8mA 197 nC @ 10 V ±20V 12100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR102N65X2

IXTR102N65X2

MOSFET N-CH 650V 54A ISOPLUS247

IXYS
2,580 -

RFQ

IXTR102N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 33mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK220N20X3

IXFK220N20X3

MOSFET N-CH 200V 220A TO264

IXYS
3,715 -

RFQ

IXFK220N20X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 220A (Tc) 10V 6.2mOhm @ 110A, 10V 4.5V @ 4mA 204 nC @ 10 V ±20V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH24N50L

IXTH24N50L

MOSFET N-CH 500V 24A TO247

IXYS
2,932 -

RFQ

IXTH24N50L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 20V 300mOhm @ 500mA, 20V 5V @ 250µA 160 nC @ 20 V ±30V 2500 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX170P10P

IXTX170P10P

MOSFET P-CH 100V 170A PLUS247-3

IXYS
2,775 -

RFQ

IXTX170P10P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 12mOhm @ 500mA, 10V 4V @ 1mA 240 nC @ 10 V ±20V 12600 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK80N65X2

IXFK80N65X2

MOSFET N-CH 650V 80A TO264

IXYS
2,930 -

RFQ

IXFK80N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 40mOhm @ 40A, 10V 5.5V @ 4mA 143 nC @ 10 V ±30V 8245 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK32P60P

IXTK32P60P

MOSFET P-CH 600V 32A TO264

IXYS
3,413 -

RFQ

IXTK32P60P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 350mOhm @ 16A, 10V 4V @ 1mA 196 nC @ 10 V ±20V 11100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK250N10P

IXFK250N10P

MOSFET N-CH 100V 250A TO264AA

IXYS
3,031 -

RFQ

IXFK250N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Tc) 10V 6.5mOhm @ 50A, 10V 5V @ 1mA 205 nC @ 10 V ±20V 16000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH02N450HV

IXTH02N450HV

MOSFET N-CH 4500V 200MA TO247HV

IXYS
120 -

RFQ

IXTH02N450HV

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 4500 V 200mA (Tc) 10V 625Ohm @ 10mA, 10V 6.5V @ 250µA 10.6 nC @ 10 V ±20V 246 pF @ 25 V - 113W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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