Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA1R6N100D2HV

IXTA1R6N100D2HV

MOSFET N-CH 1000V 1.6A TO263HV

IXYS
3,373 -

RFQ

IXTA1R6N100D2HV

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tj) 0V 10Ohm @ 800mA, 0V 4.5V @ 100µA 27 nC @ 5 V ±20V 645 pF @ 10 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA102N15T

IXTA102N15T

MOSFET N-CH 150V 102A TO263

IXYS
3,491 -

RFQ

IXTA102N15T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 102A (Tc) 10V 18mOhm @ 500mA, 10V 5V @ 1mA 87 nC @ 10 V ±20V 5220 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP06N120P

IXTP06N120P

MOSFET N-CH 1200V 600MA TO220AB

IXYS
2,762 -

RFQ

IXTP06N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 600mA (Tc) 10V 32Ohm @ 500mA, 10V 4.5V @ 50µA 13.3 nC @ 10 V ±20V 270 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP22N65X2M

IXFP22N65X2M

MOSFET N-CH 650V 22A TO220

IXYS
2,879 -

RFQ

IXFP22N65X2M

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 145mOhm @ 11A, 10V 5V @ 1.5mA 37 nC @ 10 V ±30V 2190 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP18N65X2

IXFP18N65X2

MOSFET N-CH 650V 18A TO220AB

IXYS
2,553 -

RFQ

IXFP18N65X2

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 1.5mA 29 nC @ 10 V ±30V 1520 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP42N25P

IXTP42N25P

MOSFET N-CH 250V 42A TO220AB

IXYS
2,358 -

RFQ

IXTP42N25P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 42A (Tc) 10V 84mOhm @ 500mA, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2300 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA1N120P

IXTA1N120P

MOSFET N-CH 1200V 1A TO263

IXYS
2,352 -

RFQ

IXTA1N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 4.5V @ 50µA 17.6 nC @ 10 V ±20V 550 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH12N65X2

IXTH12N65X2

MOSFET N-CH 650V 12A TO247-3

IXYS
3,817 -

RFQ

IXTH12N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 300mOhm @ 6A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 1100 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA130N10T2

IXFA130N10T2

MOSFET N-CH 100V 130A TO263

IXYS
3,393 -

RFQ

IXFA130N10T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 65A, 10V 4.5V @ 1mA 130 nC @ 10 V ±20V 6600 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP1R4N120P

IXTP1R4N120P

MOSFET N-CH 1200V 1.4A TO220AB

IXYS
2,140 -

RFQ

IXTP1R4N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1.4A (Tc) 10V 13Ohm @ 500mA, 10V 4.5V @ 100µA 24.8 nC @ 10 V ±20V 666 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP340N04T4

IXTP340N04T4

MOSFET N-CH 40V 340A TO220AB

IXYS
2,378 -

RFQ

IXTP340N04T4

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 340A (Tc) 10V 1.9mOhm @ 100A, 10V 4V @ 250µA 256 nC @ 10 V ±15V 13000 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA3N100D2HV

IXTA3N100D2HV

MOSFET N-CH 1000V 3A TO263HV

IXYS
2,600 -

RFQ

IXTA3N100D2HV

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tj) 0V 6Ohm @ 1.5A, 0V 4.5V @ 250µA 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP24N65X2

IXTP24N65X2

MOSFET N-CH 650V 24A TO220AB

IXYS
3,773 -

RFQ

IXTP24N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP76N25T

IXTP76N25T

MOSFET N-CH 250V 76A TO220AB

IXYS
3,521 -

RFQ

IXTP76N25T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 76A (Tc) 10V 39mOhm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 4500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH14N60P

IXFH14N60P

MOSFET N-CH 600V 14A TO247AD

IXYS
3,580 -

RFQ

IXFH14N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 2.5mA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP260N055T2

IXTP260N055T2

MOSFET N-CH 55V 260A TO220AB

IXYS
2,791 -

RFQ

IXTP260N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP230N075T2

IXTP230N075T2

MOSFET N-CH 75V 230A TO220AB

IXYS
2,494 -

RFQ

IXTP230N075T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP36N60X3

IXFP36N60X3

MOSFET ULTRA JCT 600V 36A TO220

IXYS
3,730 -

RFQ

IXFP36N60X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 5V @ 2.5mA 29 nC @ 10 V ±20V 2030 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH24N65X2

IXTH24N65X2

MOSFET N-CH 650V 24A TO247

IXYS
3,167 -

RFQ

IXTH24N65X2

Ficha técnica

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 145mOhm @ 12A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 2060 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA30N25X3

IXFA30N25X3

MOSFET N-CHANNEL 250V 30A TO263

IXYS
2,644 -

RFQ

IXFA30N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 60mOhm @ 15A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1450 pF @ 25 V - 176W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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