Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTU08N100P

IXTU08N100P

MOSFET N-CH 1000V 8A TO251

IXYS
3,895 -

RFQ

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) - - - - - - - - - Through Hole
IXTV102N25T

IXTV102N25T

MOSFET N-CH 250V 102A PLUS220

IXYS
3,007 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 102A (Tc) - - - - - - - - - Through Hole
IXTV120N15T

IXTV120N15T

MOSFET N-CH 150V 120A PLUS220

IXYS
3,350 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) - - - - - - - - - Through Hole
IXTV130N15T

IXTV130N15T

MOSFET N-CH 150V 130A PLUS220

IXYS
3,730 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) - - - - - - - - - Through Hole
IXTV60N30T

IXTV60N30T

MOSFET N-CH 300V 60A PLUS220

IXYS
2,598 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) - - - - - - - - - Through Hole
IXTV72N30T

IXTV72N30T

MOSFET N-CH 300V 72A PLUS220

IXYS
3,800 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) - - - - - - - - - Through Hole
IXTV96N25T

IXTV96N25T

MOSFET N-CH 250V 96A PLUS220

IXYS
3,207 -

RFQ

IXTV96N25T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 96A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 114 nC @ 10 V ±30V 6100 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTV98N20T

IXTV98N20T

MOSFET N-CH 200V 98A PLUS220

IXYS
2,633 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 98A (Tc) - - - - - - - - - Through Hole
IXTY06N120P

IXTY06N120P

MOSFET N-CH 1200V 90A TO252

IXYS
3,544 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 90A (Tc) - - - - - - - - - Surface Mount
IXTY08N120P

IXTY08N120P

MOSFET N-CH 1200V 8A TO220AB

IXYS
3,824 -

RFQ

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 8A (Tc) - - - - - - - - - Through Hole
IXTY15N20T

IXTY15N20T

MOSFET N-CH 200V 15A TO252

IXYS
2,487 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 15A (Tc) - - - - - - - - - Surface Mount
IXTY24N15T

IXTY24N15T

MOSFET N-CH 150V 24A TO252

IXYS
2,961 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 24A (Tc) - - - - - - - - - Surface Mount
IXUC100N055

IXUC100N055

MOSFET N-CH 55V 100A ISOPLUS220

IXYS
3,347 -

RFQ

IXUC100N055

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 7.7mOhm @ 80A, 10V 4V @ 1mA 100 nC @ 10 V ±20V - - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXUC200N055

IXUC200N055

MOSFET N-CH 55V 200A ISOPLUS220

IXYS
3,849 -

RFQ

IXUC200N055

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 5.1mOhm @ 100A, 10V 4V @ 2mA 200 nC @ 10 V ±20V - - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
VMO1600-02P

VMO1600-02P

MOSFET N-CH 200V 1900A Y3-LI

IXYS
3,207 -

RFQ

VMO1600-02P

Ficha técnica

Tray PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 1900A (Tc) 10V 1.7mOhm @ 1600A, 10V 5V @ 5mA 2900 nC @ 10 V ±20V - - - -40°C ~ 150°C (TJ) Chassis Mount
IXFK210N17T

IXFK210N17T

MOSFET N-CH 170V 210A TO264AA

IXYS
2,228 -

RFQ

IXFK210N17T

Ficha técnica

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 170 V 210A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 4mA 285 nC @ 10 V ±20V 18800 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX210N17T

IXFX210N17T

MOSFET N-CH 170V 210A PLUS247-3

IXYS
2,257 -

RFQ

IXFX210N17T

Ficha técnica

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 170 V 210A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 4mA 285 nC @ 10 V ±20V 18800 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFN260N17T

IXFN260N17T

MOSFET N-CH 170V 245A SOT227B

IXYS
2,603 -

RFQ

IXFN260N17T

Ficha técnica

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 170 V 245A (Tc) 10V 6.5mOhm @ 60A, 10V 5V @ 8mA 400 nC @ 10 V ±20V 24000 pF @ 25 V - 1090W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFK260N17T

IXFK260N17T

MOSFET N-CH 170V 260A TO264AA

IXYS
2,245 -

RFQ

IXFK260N17T

Ficha técnica

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 170 V 260A (Tc) 10V 6.5mOhm @ 60A, 10V 5V @ 8mA 400 nC @ 10 V ±20V 24000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX260N17T

IXFX260N17T

MOSFET N-CH 170V 260A PLUS247-3

IXYS
3,413 -

RFQ

IXFX260N17T

Ficha técnica

Tube GigaMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 170 V 260A (Tc) 10V 6.5mOhm @ 60A, 10V 5V @ 8mA 400 nC @ 10 V ±20V 24000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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