Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH1N100

IXTH1N100

MOSFET N-CH 1000V 1.5A TO247

IXYS
2,901 -

RFQ

IXTH1N100

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 1.5A (Tc) 10V 11Ohm @ 1A, 10V 4.5V @ 25µA 23 nC @ 10 V ±20V 480 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH21N50

IXTH21N50

MOSFET N-CH 500V 21A TO247

IXYS
2,472 -

RFQ

IXTH21N50

Ficha técnica

Tube MegaMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 250mOhm @ 10.5A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH30N25

IXTH30N25

MOSFET N-CH 250V 30A TO247

IXYS
3,659 -

RFQ

IXTH30N25

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 75mOhm @ 15A, 10V 4V @ 250µA 136 nC @ 10 V ±20V 3950 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH30N50

IXTH30N50

MOSFET N-CH 500V 30A TO247

IXYS
2,878 -

RFQ

IXTH30N50

Ficha técnica

Tube MegaMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 170mOhm @ 500mA, 10V 4V @ 250µA 227 nC @ 10 V ±20V 5680 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH30N50L

IXTH30N50L

MOSFET N-CH 500V 30A TO247

IXYS
3,413 -

RFQ

IXTH30N50L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 4.5V @ 250µA 240 nC @ 10 V ±20V 10200 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH36N20T

IXTH36N20T

MOSFET N-CH 200V 36A TO247

IXYS
2,430 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) - - - - - - - - - Through Hole
IXTH41N25

IXTH41N25

MOSFET N-CH 250V 41A TO247

IXYS
3,911 -

RFQ

IXTH41N25

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 41A (Tc) 10V 72mOhm @ 15A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH44N30T

IXTH44N30T

MOSFET N-CH 300V 44A TO247

IXYS
2,267 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 300 V 44A (Tc) - - - - - - - - - Through Hole
IXTH48N15

IXTH48N15

MOSFET N-CH 150V 48A TO247

IXYS
3,600 -

RFQ

IXTH48N15

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 48A (Tc) 10V 32mOhm @ 500mA, 10V - 140 nC @ 10 V ±20V 3200 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH48N20

IXTH48N20

MOSFET N-CH 200V 48A TO247

IXYS
3,198 -

RFQ

IXTH48N20

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) 10V 50mOhm @ 15A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3000 pF @ 25 V - 275W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH48N20T

IXTH48N20T

MOSFET N-CH 200V 48A TO247

IXYS
3,193 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) - - - - - - - 275W (Tc) - Through Hole
IXTH50N30

IXTH50N30

MOSFET N-CH 300V 50A TO247

IXYS
2,370 -

RFQ

IXTH50N30

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 65mOhm @ 25A, 10V 4V @ 250µA 165 nC @ 10 V ±30V 4400 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH54N30T

IXTH54N30T

MOSFET N-CH 300V 54A TO247

IXYS
2,270 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 300 V 54A (Tc) - - - - - - - - - Through Hole
IXTH56N15T

IXTH56N15T

MOSFET N-CH 150V 56A TO247

IXYS
2,241 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 56A (Tc) - - - - - - - - - Through Hole
IXTH60N10

IXTH60N10

MOSFET N-CH 100V 60A TO247

IXYS
2,395 -

RFQ

IXTH60N10

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 20mOhm @ 30A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH60N15

IXTH60N15

MOSFET N-CH 150V 60A TO247

IXYS
3,251 -

RFQ

IXTH60N15

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) 10V 33mOhm @ 15A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3000 pF @ 25 V - 275W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH60N25

IXTH60N25

MOSFET N-CH 250V 60A TO247

IXYS
3,070 -

RFQ

IXTH60N25

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 46mOhm @ 15A, 10V 4V @ 250µA 164 nC @ 10 V ±20V 4400 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH60N30T

IXTH60N30T

MOSFET N-CH 300V 60A TO247

IXYS
3,599 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) - - - - - - - - - Through Hole
IXTH62N25T

IXTH62N25T

MOSFET N-CH 250V 62A TO247

IXYS
2,783 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 62A (Tc) - - - - - - - - - Through Hole
IXTH6N80A

IXTH6N80A

MOSFET N-CH 800V 6A TO247

IXYS
3,120 -

RFQ

IXTH6N80A

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2800 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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