Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC034N10LS5ATMA1

BSC034N10LS5ATMA1

MOSFET N-CH 100V 19A/100A TDSON

Infineon Technologies
3,156 -

RFQ

BSC034N10LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta), 100A (Tc) 4.5V, 10V 3.4mOhm @ 50A, 10V 2.3V @ 115µA 46 nC @ 4.5 V ±20V 6500 pF @ 50 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
G3R350MT12D

G3R350MT12D

SIC MOSFET N-CH 11A TO247-3

GeneSiC Semiconductor
2,555 -

RFQ

G3R350MT12D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A (Tc) 15V 420mOhm @ 4A, 15V 2.69V @ 2mA 12 nC @ 15 V ±15V 334 pF @ 800 V - 74W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB015N08N5ATMA1

IPB015N08N5ATMA1

MOSFET N-CH 80V 180A TO263-7

Infineon Technologies
3,305 -

RFQ

IPB015N08N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 6V, 10V 1.5mOhm @ 100A, 10V 3.8V @ 279µA 222 nC @ 10 V ±20V 16900 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS300N08S5N011TATMA1

IAUS300N08S5N011TATMA1

MOSFET N-CH 80V 300A HDSOP-16-2

Infineon Technologies
2,861 -

RFQ

IAUS300N08S5N011TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tj) 6V, 10V 1.1mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3107TRL

AUIRFS3107TRL

MOSFET N-CH 75V 195A D2PAK

Infineon Technologies
2,388 -

RFQ

AUIRFS3107TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4110PBF

IRFB4110PBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies
4,880 -

RFQ

IRFB4110PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISC011N06LM5ATMA1

ISC011N06LM5ATMA1

TRENCH 40<-<100V PG-TDSON-8

Infineon Technologies
3,359 -

RFQ

ISC011N06LM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Ta), 288A (Tc) 4.5V, 10V 1.15mOhm @ 50A, 10V 2.3V @ 116µA 170 nC @ 10 V ±20V 11000 pF @ 30 V - 3W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT007N06NATMA1

IPT007N06NATMA1

MOSFET N-CH 60V 300A 8HSOF

Infineon Technologies
3,631 -

RFQ

IPT007N06NATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 300A (Tc) 6V, 10V 0.75mOhm @ 150A, 10V 3.3V @ 280µA 287 nC @ 10 V ±20V 16000 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT010N08NM5ATMA1

IPT010N08NM5ATMA1

TRENCH 40<-<100V PG-HSOF-8

Infineon Technologies
2,079 -

RFQ

IPT010N08NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 43A (Ta), 425A (Tc) 6V, 10V 1.05mOhm @ 150A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 16000 pF @ 40 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP083N15A-F102

FDP083N15A-F102

MOSFET N-CH 150V 83A TO220-3

onsemi
3,501 -

RFQ

FDP083N15A-F102

Ficha técnica

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 8.3mOhm @ 75A, 10V 4V @ 250µA 84 nC @ 10 V ±20V 6040 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB010N06NATMA1

IPB010N06NATMA1

MOSFET N-CH 60V 45A/180A TO263-7

Infineon Technologies
3,267 -

RFQ

IPB010N06NATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta), 180A (Tc) 6V, 10V 1mOhm @ 100A, 10V 4V @ 280µA 208 nC @ 10 V ±20V 15000 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB065N15N3GATMA1

IPB065N15N3GATMA1

MOSFET N-CH 150V 130A TO263-7

Infineon Technologies
3,833 -

RFQ

IPB065N15N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 8V, 10V 6.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 7300 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA3N120-TRL

IXTA3N120-TRL

MOSFET N-CH 1200V 3A TO263

IXYS
3,363 -

RFQ

IXTA3N120-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1350 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CSD19536KCS

CSD19536KCS

MOSFET N-CH 100V 150A TO220-3

Texas Instruments
3,316 -

RFQ

CSD19536KCS

Ficha técnica

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 150A (Ta) 6V, 10V 2.7mOhm @ 100A, 10V 3.2V @ 250µA 153 nC @ 10 V ±20V 12000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP3703PBF

IRFP3703PBF

MOSFET N-CH 30V 210A TO247AC

Infineon Technologies
1,109 -

RFQ

IRFP3703PBF

Ficha técnica

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 210A (Tc) 7V, 10V 2.8mOhm @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V 8250 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4310ZPBF

IRFP4310ZPBF

MOSFET N-CH 100V 120A TO247AC

Infineon Technologies
2,493 -

RFQ

IRFP4310ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 280W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD19532KTTT

CSD19532KTTT

MOSFET N-CH 100V 200A DDPAK

Texas Instruments
2,515 -

RFQ

CSD19532KTTT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk NexFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Ta) 6V, 10V 5.6mOhm @ 90A, 10V 3.2V @ 250µA 57 nC @ 10 V ±20V 5060 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD19536KTTT

CSD19536KTTT

MOSFET N-CH 100V 200A DDPAK

Texas Instruments
3,095 -

RFQ

CSD19536KTTT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Ta) 6V, 10V 2.4mOhm @ 100A, 10V 3.2V @ 250µA 153 nC @ 10 V ±20V 12000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZXM64N03XTC

ZXM64N03XTC

MOSFET N-CH 30V 5A 8MSOP

Diodes Incorporated
3,066 -

RFQ

ZXM64N03XTC

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 45mOhm @ 3.7A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 950 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXM64P02XTC

ZXM64P02XTC

MOSFET P-CH 20V 3.5A 8MSOP

Diodes Incorporated
3,707 -

RFQ

ZXM64P02XTC

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.7V, 4.5V 90mOhm @ 2.4A, 4.5V 700mV @ 250µA (Min) 6.9 nC @ 4.5 V ±12V 900 pF @ 15 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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