Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP21NM60N

STP21NM60N

MOSFET N-CH 600V 17A TO220AB

STMicroelectronics
2,545 -

RFQ

STP21NM60N

Ficha técnica

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 220mOhm @ 8.5A, 10V 4V @ 250µA 66 nC @ 10 V ±25V 1900 pF @ 50 V - 140W (Tc) 150°C (TJ) Through Hole
STP25NM60N

STP25NM60N

MOSFET N-CH 600V 21A TO220AB

STMicroelectronics
3,459 -

RFQ

STP25NM60N

Ficha técnica

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 4V @ 250µA 84 nC @ 10 V ±25V 2400 pF @ 50 V - 160W (Tc) 150°C (TJ) Through Hole
STW21NM60N

STW21NM60N

MOSFET N-CH 600V 17A TO247-3

STMicroelectronics
3,661 -

RFQ

STW21NM60N

Ficha técnica

Tube MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 220mOhm @ 8.5A, 10V 4V @ 250µA 66 nC @ 10 V ±25V 1900 pF @ 50 V - 140W (Tc) 150°C (TJ) Through Hole
STB21NM60N

STB21NM60N

MOSFET N-CH 600V 17A D2PAK

STMicroelectronics
3,926 -

RFQ

STB21NM60N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 220mOhm @ 8.5A, 10V 4V @ 250µA 66 nC @ 10 V ±25V 1900 pF @ 50 V - 140W (Tc) 150°C (TJ) Surface Mount
STB25NM60N

STB25NM60N

MOSFET N-CH 600V 21A D2PAK

STMicroelectronics
2,647 -

RFQ

STB25NM60N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 4V @ 250µA 84 nC @ 10 V ±25V 2400 pF @ 50 V - 160W (Tc) 150°C (TJ) Surface Mount
BTS247Z E3062A

BTS247Z E3062A

MOSFET N-CH 55V 33A TO263-5

Infineon Technologies
3,458 -

RFQ

BTS247Z E3062A

Ficha técnica

Tape & Reel (TR) TEMPFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 33A (Tc) 4.5V, 10V 18mOhm @ 12A, 10V 2V @ 90µA 90 nC @ 10 V ±20V 1730 pF @ 25 V Temperature Sensing Diode 120W (Tc) -40°C ~ 175°C (TJ) Surface Mount
MIC94051BM4 TR

MIC94051BM4 TR

MOSFET P-CH 6V 1.8A SOT143

Microchip Technology
3,349 -

RFQ

MIC94051BM4 TR

Ficha técnica

Tape & Reel (TR) SymFET™ Obsolete P-Channel MOSFET (Metal Oxide) 6 V 1.8A (Ta) 1.8V, 4.5V 160mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V 600 pF @ 5.5 V - 568mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
MIC94052BC6-TR

MIC94052BC6-TR

MOSFET P-CH 6V 2A SC70-6

Microchip Technology
2,373 -

RFQ

MIC94052BC6-TR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 6 V 2A (Ta) 1.8V, 4.5V 84mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V - - 270mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
IPTC012N08NM5ATMA1

IPTC012N08NM5ATMA1

MOSFET N-CH 80V 40A/396A HDSOP

Infineon Technologies
3,932 -

RFQ

IPTC012N08NM5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 40A (Ta), 396A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 275µA 219 nC @ 10 V ±20V 16000 pF @ 40 V - 3.8W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB0165N807L

FDB0165N807L

MOSFET N-CH 80V 310A TO263-7

onsemi
2,375 -

RFQ

FDB0165N807L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 310A (Tc) 10V 1.6mOhm @ 36A, 10V 4V @ 250µA 304 nC @ 10 V ±20V 23660 pF @ 40 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB107N20N3GATMA1

IPB107N20N3GATMA1

MOSFET N-CH 200V 88A D2PAK

Infineon Technologies
2,079 -

RFQ

IPB107N20N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 10.7mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4321PBF

IRFP4321PBF

MOSFET N-CH 150V 78A TO247AC

Infineon Technologies
3,271 -

RFQ

IRFP4321PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 78A (Tc) 10V 15.5mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPL60R065P7AUMA1

IPL60R065P7AUMA1

MOSFET N-CH 650V 41A 4VSON

Infineon Technologies
2,116 -

RFQ

IPL60R065P7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 41A (Tc) 10V 65mOhm @ 15.9A, 10V 4V @ 800µA 67 nC @ 10 V ±20V 2895 pF @ 400 V - 201W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFS8407-7P

AUIRFS8407-7P

MOSFET N-CH 40V 240A D2PAK-7

Infineon Technologies
2,766 -

RFQ

AUIRFS8407-7P

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.3mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP036N10A

FDP036N10A

MOSFET N-CH 100V 120A TO220-3

onsemi
3,484 -

RFQ

FDP036N10A

Ficha técnica

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.6mOhm @ 75A, 10V 4V @ 250µA 116 nC @ 10 V ±20V 7295 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB020N10N5LFATMA1

IPB020N10N5LFATMA1

MOSFET N-CH 100V 120A TO263-3

Infineon Technologies
3,122 -

RFQ

IPB020N10N5LFATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 2mOhm @ 100A, 10V 4.1V @ 270µA 195 nC @ 10 V ±20V 840 pF @ 50 V - 313W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL60R060CFD7AUMA1

IPL60R060CFD7AUMA1

MOSFET N CH

Infineon Technologies
3,158 -

RFQ

IPL60R060CFD7AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 60mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3193 pF @ 400 V - 219W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IXTA180N10T

IXTA180N10T

MOSFET N-CH 100V 180A TO263

IXYS
2,424 -

RFQ

IXTA180N10T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±30V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMTS1D6N10MCTXG

NTMTS1D6N10MCTXG

SINGLE N-CHANNEL POWER MOSFET 10

onsemi
1,200 -

RFQ

NTMTS1D6N10MCTXG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 36A (Ta), 273A (Tc) 10V 1.7mOhm @ 90A, 10V 4V @ 650µA 106 nC @ 10 V ±20V 7630 pF @ 50 V - 5W (Ta), 291W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMTS0D7N06CLTXG

NVMTS0D7N06CLTXG

AFSM T6 60V LL NCH

onsemi
2,645 -

RFQ

NVMTS0D7N06CLTXG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 62.2A (Ta), 477A (Tc) 4.5V, 10V 0.68mOhm @ 50A, 10V 2.5V @ 250µA 225 nC @ 10 V ±20V 16200 pF @ 25 V - 5W (Ta), 294.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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