Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP60R190C6XKSA1

IPP60R190C6XKSA1

MOSFET N-CH 600V 20.2A TO220-3

Infineon Technologies
2,249 -

RFQ

IPP60R190C6XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB027N10N3GATMA1

IPB027N10N3GATMA1

MOSFET N-CH 100V 120A D2PAK

Infineon Technologies
2,355 -

RFQ

IPB027N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 2.7mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUT300N10S5N015ATMA1

IAUT300N10S5N015ATMA1

MOSFET N-CH 100V 300A 8HSOF

Infineon Technologies
3,029 -

RFQ

IAUT300N10S5N015ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 6V, 10V 1.5mOhm @ 100A, 10V 3.8V @ 275µA 216 nC @ 10 V ±20V 16011 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUS260N10S5N019TATMA1

IAUS260N10S5N019TATMA1

MOSFET N-CH 100V 260A HDSOP-16-2

Infineon Technologies
2,080 -

RFQ

IAUS260N10S5N019TATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 260A (Tj) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 210µA 166 nC @ 10 V ±20V 11830 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA36P15

FQA36P15

MOSFET P-CH 150V 36A TO3PN

onsemi
3,314 -

RFQ

FQA36P15

Ficha técnica

Tube QFET® Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 105 nC @ 10 V ±30V 3320 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
IAUS300N08S5N012ATMA1

IAUS300N08S5N012ATMA1

MOSFET N-CH 80V 300A HSOG-8

Infineon Technologies
2,328 -

RFQ

IAUS300N08S5N012ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMTS0D7N04CTXG

NTMTS0D7N04CTXG

MOSFET N-CH 40V 65A/420A 8DFNW

onsemi
3,700 -

RFQ

NTMTS0D7N04CTXG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 65A (Ta), 420A (Tc) 10V 0.67mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 9230 pF @ 25 V - 4.9W (Ta), 205W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB072N15N3GATMA1

IPB072N15N3GATMA1

MOSFET N-CH 150V 100A TO263-3

Infineon Technologies
7,069 -

RFQ

IPB072N15N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.2mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB86135

FDB86135

MOSFET N-CH 100V 75A D2PAK

onsemi
3,514 -

RFQ

FDB86135

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 3.5mOhm @ 75A, 10V 4V @ 250µA 116 nC @ 10 V ±20V 7295 pF @ 25 V - 2.4W (Ta), 227W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA36P15P-TRL

IXTA36P15P-TRL

MOSFET P-CH 150V 36A TO263

IXYS
2,472 -

RFQ

Tape & Reel (TR),Cut Tape (CT) PolarP™ Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB031N08

FDB031N08

MOSFET N-CH 75V 120A D2PAK

onsemi
3,815 -

RFQ

FDB031N08

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.1mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75345S3ST

HUF75345S3ST

MOSFET N-CH 55V 75A D2PAK

onsemi
3,661 -

RFQ

HUF75345S3ST

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 275 nC @ 20 V ±20V 4000 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF100S201

IRF100S201

MOSFET N-CH 100V 192A D2PAK

Infineon Technologies
2,861 -

RFQ

IRF100S201

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 192A (Tc) 10V 4.2mOhm @ 115A, 10V 4V @ 250µA 255 nC @ 10 V ±20V 9500 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA44P15T-TRL

IXTA44P15T-TRL

MOSFET P-CH 150V 44A TO263

IXYS
3,322 -

RFQ

IXTA44P15T-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 22A, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA96P085T-TRL

IXTA96P085T-TRL

MOSFET P-CH 85V 96A TO263

IXYS
754 -

RFQ

IXTA96P085T-TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 85 V 96A (Tc) 10V 13mOhm @ 48A, 10V 4V @ 250µA 180 nC @ 10 V ±15V 13100 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTBLS1D5N08MC

NTBLS1D5N08MC

MOSFET N-CH 80V 32A/298A 8HPSOF

onsemi
2,025 -

RFQ

NTBLS1D5N08MC

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 298A (Tc) 6V, 10V 1.53mOhm @ 80A, 10V 4V @ 710µA 111 nC @ 10 V ±20V 8170 pF @ 40 V - 2.9W (Ta), 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB019N08N3GATMA1

IPB019N08N3GATMA1

MOSFET N-CH 80V 180A TO263-7

Infineon Technologies
2,162 -

RFQ

IPB019N08N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14200 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFY26N30X3

IXFY26N30X3

MOSFET N-CH 300V 26A TO252AA

IXYS
2,732 -

RFQ

IXFY26N30X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 26A (Tc) 10V 66mOhm @ 13A, 10V 4.5V @ 500µA 22 nC @ 10 V ±20V 1465 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT012N08N5ATMA1

IPT012N08N5ATMA1

MOSFET N-CH 80V 300A 8HSOF

Infineon Technologies
3,174 -

RFQ

IPT012N08N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tc) 6V, 10V 1.2mOhm @ 150A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 17000 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB070AN06A0

FDB070AN06A0

MOSFET N-CH 60V 15A/80A D2PAK

onsemi
3,674 -

RFQ

FDB070AN06A0

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 3000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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