Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STB28N65M2

STB28N65M2

MOSFET N-CH 650V 20A D2PAK

STMicroelectronics
2,033 -

RFQ

STB28N65M2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1440 pF @ 100 V - 170W (Tc) 150°C (TJ) Surface Mount
TSM4NB60CH C5G

TSM4NB60CH C5G

MOSFET N-CH 600V 4A TO251

Taiwan Semiconductor Corporation
2,898 -

RFQ

TSM4NB60CH C5G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 4.5V @ 250µA 14.5 nC @ 10 V ±30V 500 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLS3034TRLPBF

IRLS3034TRLPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,389 -

RFQ

IRLS3034TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHP33NQ20T,127

PHP33NQ20T,127

MOSFET N-CH 200V 32.7A TO220AB

Nexperia USA Inc.
3,253 -

RFQ

PHP33NQ20T,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 32.7A (Tc) 10V 77mOhm @ 15A, 10V 4V @ 1mA 32.2 nC @ 10 V ±20V 1870 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI7439DP-T1-E3

SI7439DP-T1-E3

MOSFET P-CH 150V 3A PPAK SO-8

Vishay Siliconix
3,096 -

RFQ

SI7439DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 150 V 3A (Ta) 6V, 10V 90mOhm @ 5.2A, 10V 4V @ 250µA 135 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1

MOSFET N-CH 80V 10A/40A 8TSDSON

Infineon Technologies
3,722 -

RFQ

BSZ123N08NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta), 40A (Tc) 6V, 10V 12.3mOhm @ 20A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1700 pF @ 40 V - 2.1W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY02N120P

IXTY02N120P

MOSFET N-CH 1200V 200MA TO252

IXYS
3,321 -

RFQ

IXTY02N120P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 200mA (Tc) 10V 75Ohm @ 500mA, 10V 4V @ 100µA 4.7 nC @ 10 V ±20V 104 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD14N60E-GE3

SIHD14N60E-GE3

MOSFET N-CH 600V 13A DPAK

Vishay Siliconix
3,439 -

RFQ

SIHD14N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS86200DC

FDMS86200DC

MOSFET N-CH 150V 9.3A DLCOOL56

onsemi
2,800 -

RFQ

FDMS86200DC

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 9.3A (Ta), 28A (Tc) 6V, 10V 17mOhm @ 9.3A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2955 pF @ 75 V - 3.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7431DP-T1-GE3

SI7431DP-T1-GE3

MOSFET P-CH 200V 2.2A PPAK SO-8

Vishay Siliconix
3,234 -

RFQ

SI7431DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 200 V 2.2A (Ta) 6V, 10V 174mOhm @ 3.8A, 10V 4V @ 250µA 135 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQB47P06TM-AM002

FQB47P06TM-AM002

MOSFET P-CH 60V 47A D2PAK

onsemi
3,851 -

RFQ

FQB47P06TM-AM002

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 10V 26mOhm @ 23.5A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3600 pF @ 25 V - 3.75W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTY08N50D2

IXTY08N50D2

MOSFET N-CH 500V 800MA TO252

IXYS
3,552 -

RFQ

IXTY08N50D2

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 800mA (Tc) - 4.6Ohm @ 400mA, 0V - 12.7 nC @ 5 V ±20V 312 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA60R180P7SXKSA1

IPA60R180P7SXKSA1

MOSFET N-CHANNEL 600V 18A TO220

Infineon Technologies
2,207 -

RFQ

IPA60R180P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -40°C ~ 150°C (TJ) Through Hole
BSC093N15NS5ATMA1

BSC093N15NS5ATMA1

MOSFET N-CH 150V 87A TDSON

Infineon Technologies
2,380 -

RFQ

BSC093N15NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 87A (Tc) 8V, 10V 9.3mOhm @ 44A, 10V 4.6V @ 107µA 40.7 nC @ 10 V ±20V 3230 pF @ 75 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB28N60DM2

STB28N60DM2

MOSFET N-CH 600V 21A D2PAK

STMicroelectronics
3,278 -

RFQ

STB28N60DM2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 34 nC @ 10 V ±25V 1500 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ATP304-TL-H

ATP304-TL-H

MOSFET P-CH 60V 100A ATPAK

onsemi
3,249 -

RFQ

ATP304-TL-H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) 4.5V, 10V 6.5mOhm @ 50A, 10V - 250 nC @ 10 V ±20V 13000 pF @ 20 V - 90W (Tc) 150°C (TJ) Surface Mount
SUM110P06-07L-E3

SUM110P06-07L-E3

MOSFET P-CH 60V 110A TO263

Vishay Siliconix
2,414 -

RFQ

SUM110P06-07L-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 6.9mOhm @ 30A, 10V 3V @ 250µA 345 nC @ 10 V ±20V 11400 pF @ 25 V - 3.75W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM120P10_10M1LGE3

SQM120P10_10M1LGE3

MOSFET P-CH 100V 120A TO263

Vishay Siliconix
2,323 -

RFQ

SQM120P10_10M1LGE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 4.5V, 10V 10.1mOhm @ 30A, 10V 2.5V @ 250µA 190 nC @ 10 V ±20V 9000 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPH1R306PL,L1Q

TPH1R306PL,L1Q

MOSFET N-CH 60V 100A 8SOP

Toshiba Semiconductor and Storage
2,371 -

RFQ

TPH1R306PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 1.34mOhm @ 50A, 10V 2.5V @ 1mA 91 nC @ 10 V ±20V 8100 pF @ 30 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
ISC027N10NM6ATMA1

ISC027N10NM6ATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
2,885 -

RFQ

ISC027N10NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Ta), 192A (Tc) 8V, 10V 2.7mOhm @ 50A, 10V 3.3V @ 116µA 72.5 nC @ 10 V ±20V 5500 pF @ 50 V - 3W (Ta), 217W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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