Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ZVN2120GTC

ZVN2120GTC

MOSFET N-CH 200V 320MA SOT223

Diodes Incorporated
2,809 -

RFQ

ZVN2120GTC

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 320mA (Ta) 10V 10Ohm @ 250mA, 10V 3V @ 1mA - ±20V 85 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVN2535ASTOA

ZVN2535ASTOA

MOSFET N-CH 350V 90MA E-LINE

Diodes Incorporated
2,596 -

RFQ

ZVN2535ASTOA

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 350 V 90mA (Ta) 10V 35Ohm @ 100mA, 10V 3V @ 1mA - ±20V 70 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN2535ASTOB

ZVN2535ASTOB

MOSFET N-CH 350V 90MA E-LINE

Diodes Incorporated
2,551 -

RFQ

ZVN2535ASTOB

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 350 V 90mA (Ta) 10V 35Ohm @ 100mA, 10V 3V @ 1mA - ±20V 70 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN2535ASTZ

ZVN2535ASTZ

MOSFET N-CH 350V 90MA E-LINE

Diodes Incorporated
2,967 -

RFQ

ZVN2535ASTZ

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 350 V 90mA (Ta) 10V 35Ohm @ 100mA, 10V 3V @ 1mA - ±20V 70 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) Through Hole
BSC042N03ST

BSC042N03ST

MOSFET N-CH 30V 20A/50A TDSON

Infineon Technologies
3,182 -

RFQ

BSC042N03ST

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 50A (Tc) 4.5V, 10V 4.2mOhm @ 50A, 10V 2V @ 50µA 28 nC @ 5 V ±20V 3660 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
BSC059N03ST

BSC059N03ST

MOSFET N-CH 30V 19A/89A TDSON

Infineon Technologies
3,008 -

RFQ

BSC059N03ST

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 89A (Tc) 4.5V, 10V 5.5mOhm @ 50A, 10V 2V @ 35µA 21 nC @ 5 V ±20V 2670 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
MIC94030BM4 TR

MIC94030BM4 TR

MOSFET P-CH 16V 1A SOT-143

Microchip Technology
3,495 -

RFQ

MIC94030BM4 TR

Ficha técnica

Tape & Reel (TR) TinyFET® Obsolete P-Channel MOSFET (Metal Oxide) 16 V 1A (Ta) 2.7V, 10V 450mOhm @ 100mA, 10V 1.4V @ 250µA - 16V 100 pF @ 12 V - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MIC94050BM4 TR

MIC94050BM4 TR

MOSFET P-CH 6V 1.8A SOT-143

Microchip Technology
2,452 -

RFQ

MIC94050BM4 TR

Ficha técnica

Tape & Reel (TR) SymFET™ Obsolete P-Channel MOSFET (Metal Oxide) 6 V 1.8A (Ta) 1.8V, 4.5V 160mOhm @ 100mA, 4.5V 1.2V @ 250µA - 6V 600 pF @ 5.5 V - 568mW (Ta) -40°C ~ 150°C (TJ) Surface Mount
FDMS8690

FDMS8690

MOSFET N-CH 30V 14A/27A 8MLP

onsemi
3,774 -

RFQ

FDMS8690

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 27A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 1680 pF @ 15 V - 2.5W (Ta), 37.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF634

IRF634

MOSFET N-CH 250V 8A TO220AB

STMicroelectronics
3,514 -

RFQ

IRF634

Ficha técnica

Tube MESH OVERLAY™ Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 450mOhm @ 4A, 10V 4V @ 250µA 51.8 nC @ 10 V ±20V 770 pF @ 25 V - 80W (Tc) 150°C (TJ) Through Hole
IRF640FP

IRF640FP

MOSFET N-CH 200V 18A TO220FP

STMicroelectronics
2,248 -

RFQ

IRF640FP

Ficha técnica

Tube MESH OVERLAY™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 9A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1560 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
STB100NH02LT4

STB100NH02LT4

MOSFET N-CH 24V 60A D2PAK

STMicroelectronics
2,697 -

RFQ

STB100NH02LT4

Ficha técnica

Tape & Reel (TR) STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 24 V 60A (Tc) 5V, 10V 6mOhm @ 30A, 10V 1.8V @ 250µA 64 nC @ 10 V ±20V 2850 pF @ 15 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDU2572

FDU2572

MOSFET N-CH 150V 4A/29A IPAK

onsemi
2,743 -

RFQ

FDU2572

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1770 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU6512A

FDU6512A

MOSFET N-CH 20V 10.7A/36A IPAK

onsemi
3,624 -

RFQ

FDU6512A

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 10.7A (Ta), 36A (Tc) 2.5V, 4.5V 21mOhm @ 10.7A, 4.5V 1.5V @ 250µA 19 nC @ 4.5 V ±12V 1082 pF @ 10 V - 3.8W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU6612A

FDU6612A

MOSFET N-CH 30V 9.5A/30A IPAK

onsemi
3,892 -

RFQ

FDU6612A

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 30A (Tc) 4.5V, 10V 20mOhm @ 9.5A, 10V 3V @ 250µA 9.4 nC @ 5 V ±20V 660 pF @ 15 V - 2.8W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB3632

FDB3632

MOSFET N-CH 100V 12A/80A D2PAK

onsemi
3,952 -

RFQ

FDB3632

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 80A (Tc) 6V, 10V 9mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6000 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC035N10NS5ATMA1

BSC035N10NS5ATMA1

MOSFET N-CH 100V 100A TDSON

Infineon Technologies
2,059 -

RFQ

BSC035N10NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3.5mOhm @ 50A, 10V 3.8V @ 115µA 87 nC @ 10 V ±20V 6500 pF @ 50 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TPN1110ENH,L1Q

TPN1110ENH,L1Q

MOSFET N-CH 200V 7.2A 8TSON

Toshiba Semiconductor and Storage
2,437 -

RFQ

TPN1110ENH,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 200 V 7.2A (Ta) 10V 114mOhm @ 3.6A, 10V 4V @ 200µA 7 nC @ 10 V ±20V 600 pF @ 100 V - 700mW (Ta), 39W (Tc) 150°C (TJ) Surface Mount
STL8P4LLF6

STL8P4LLF6

MOSFET P-CH 40V POWERFLAT

STMicroelectronics
2,009 -

RFQ

STL8P4LLF6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ F6 Active P-Channel MOSFET (Metal Oxide) 40 V 8A (Tj) 4.5V, 10V 20.5mOhm @ 4A, 10V 2.5V @ 250µA 22 nC @ 4.5 V ±20V 2850 pF @ 25 V - 2.9W (Ta) 150°C (TJ) Surface Mount
IPB011N04NGATMA1

IPB011N04NGATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies
2,734 -

RFQ

IPB011N04NGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.1mOhm @ 100A, 10V 4V @ 200µA 250 nC @ 10 V ±20V 20000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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