Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDD26AN06A0

FDD26AN06A0

MOSFET N-CH 60V 7A/36A TO252AA

onsemi
3,272 -

RFQ

FDD26AN06A0

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 36A (Tc) 10V 26mOhm @ 36A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2910PBF

IRL2910PBF

MOSFET N-CH 100V 55A TO220AB

Infineon Technologies
3,755 -

RFQ

IRL2910PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS4010TRLPBF

IRFS4010TRLPBF

MOSFET N-CH 100V 180A D2PAK

Infineon Technologies
3,319 -

RFQ

IRFS4010TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS4D0N12C

FDMS4D0N12C

MOSFET N-CH 120V 18.5A/114A 8QFN

onsemi
3,332 -

RFQ

FDMS4D0N12C

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 120 V 18.5A (Ta), 114A (Tc) 6V, 10V 4mOhm @ 67A, 10V 4V @ 370A 82 nC @ 10 V ±20V 6460 pF @ 60 V - 2.7W (Ta), 106W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP06N80C3XKSA1

SPP06N80C3XKSA1

MOSFET N-CH 800V 6A TO220-3

Infineon Technologies
2,702 -

RFQ

SPP06N80C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN0R9-25YLC,115

PSMN0R9-25YLC,115

MOSFET N-CH 25V 100A LFPAK56

Nexperia USA Inc.
3,513 -

RFQ

PSMN0R9-25YLC,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 25 V 100A (Tc) 4.5V, 10V 0.99mOhm @ 25A, 10V 1.95V @ 1mA 110 nC @ 10 V ±20V 6775 pF @ 12 V - 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80P03P4L07ATMA2

IPD80P03P4L07ATMA2

MOSFET P-CH 30V 80A TO252-31

Infineon Technologies
3,459 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) - 6.8mOhm @ 80A, 10V 2V @ 130µA 80 nC @ 10 V +5V, -16V 5700 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM70101EL-GE3

SUM70101EL-GE3

MOSFET P-CH 100V 120A TO263

Vishay Siliconix
2,754 -

RFQ

SUM70101EL-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 4.5V, 10V 10.1mOhm @ 30A, 10V 2.5V @ 250µA 190 nC @ 10 V ±20V 7000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN3R7-100BSEJ

PSMN3R7-100BSEJ

MOSFET N-CH 100V 120A D2PAK

Nexperia USA Inc.
3,395 -

RFQ

PSMN3R7-100BSEJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Ta) 10V 3.95mOhm @ 25A, 10V 4V @ 1mA 246 nC @ 10 V ±20V 16370 pF @ 50 V - 405W (Ta) 175°C (TJ) Surface Mount
SPA06N80C3XKSA1

SPA06N80C3XKSA1

MOSFET N-CH 800V 6A TO220-FP

Infineon Technologies
2,715 -

RFQ

SPA06N80C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB80P06PGATMA1

SPB80P06PGATMA1

MOSFET P-CH 60V 80A TO263-3

Infineon Technologies
3,388 -

RFQ

SPB80P06PGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 23mOhm @ 64A, 10V 4V @ 5.5mA 173 nC @ 10 V ±20V 5033 pF @ 25 V - 340W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC034N06NSATMA1

BSC034N06NSATMA1

MOSFET N-CH 60V 100A TDSON

Infineon Technologies
20,608 -

RFQ

BSC034N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 6V, 10V 3.4mOhm @ 50A, 10V 3.3V @ 41µA 41 nC @ 10 V ±20V 3000 pF @ 30 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF1407PBF

IRF1407PBF

MOSFET N-CH 75V 130A TO220AB

Infineon Technologies
2,671 -

RFQ

IRF1407PBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 130A (Tc) 10V 7.8mOhm @ 78A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 5600 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA06N120P-TRL

IXTA06N120P-TRL

MOSFET N-CH 1200V 600MA TO263

IXYS
2,794 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 600mA (Tc) 10V 34Ohm @ 300mA, 10V 4V @ 50µA 13.3 nC @ 10 V ±30V 236 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD85P04P407ATMA2

IPD85P04P407ATMA2

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies
3,805 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) - 7.3mOhm @ 85A, 10V 4V @ 150µA 89 nC @ 10 V ±20V 6085 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN4R8-100BSEJ

PSMN4R8-100BSEJ

MOSFET N-CH 100V 120A D2PAK

Nexperia USA Inc.
2,643 -

RFQ

PSMN4R8-100BSEJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tj) 10V 4.8mOhm @ 25A, 10V 4V @ 1mA 278 nC @ 10 V ±20V 14400 pF @ 50 V - 405W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB270N4F3

STB270N4F3

MOSFET N-CH 40V 160A D2PAK

STMicroelectronics
3,803 -

RFQ

STB270N4F3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ III Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 2.5mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 7400 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCB070N65S3

FCB070N65S3

MOSFET N-CH 650V 44A D2PAK

onsemi
3,085 -

RFQ

FCB070N65S3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 70mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM90N10-8M2P-E3

SUM90N10-8M2P-E3

MOSFET N-CH 100V 90A TO263

Vishay Siliconix
2,015 -

RFQ

SUM90N10-8M2P-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 8.2mOhm @ 20A, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 6290 pF @ 50 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK9J90E,S1E

TK9J90E,S1E

MOSFET N-CH 900V 9A TO3P

Toshiba Semiconductor and Storage
6,548 -

RFQ

TK9J90E,S1E

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 9A (Ta) 10V 1.3Ohm @ 4.5A, 10V 4V @ 900µA 46 nC @ 10 V ±30V 2000 pF @ 25 V - 250W (Tc) 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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