Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD90P03P4L04ATMA2

IPD90P03P4L04ATMA2

MOSFET P-CH 30V 90A TO252-31

Infineon Technologies
2,725 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) - 4.1mOhm @ 90A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC016N06NSATMA1

BSC016N06NSATMA1

MOSFET N-CH 60V 30A/100A TDSON

Infineon Technologies
3,941 -

RFQ

BSC016N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Ta), 100A (Tc) 6V, 10V 1.6mOhm @ 50A, 10V 2.8V @ 95µA 71 nC @ 10 V ±20V 5200 pF @ 30 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC012N04LM6ATMA1

ISC012N04LM6ATMA1

TRENCH <= 40V PG-TDSON-8

Infineon Technologies
3,528 -

RFQ

ISC012N04LM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 6 Active N-Channel MOSFET (Metal Oxide) 40 V 37A (Ta), 238A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2.3V @ 250µA 64 nC @ 10 V ±20V 4600 pF @ 20 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN3R9-100YSFX

PSMN3R9-100YSFX

MOSFET N-CH 100V 120A LFPAK56

Nexperia USA Inc.
3,820 -

RFQ

PSMN3R9-100YSFX

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Ta) 7V, 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 7360 pF @ 50 V - 245W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD053N08N3GATMA1

IPD053N08N3GATMA1

MOSFET N-CH 80V 90A TO252-3

Infineon Technologies
2,517 -

RFQ

IPD053N08N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 6V, 10V 5.3mOhm @ 90A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS3662

FDMS3662

MOSFET N-CH 100V 8.9A/49A 8PQFN

onsemi
3,122 -

RFQ

FDMS3662

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 8.9A (Ta), 49A (Tc) 10V 14.8mOhm @ 8.9A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 4620 pF @ 50 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS86240

FDS86240

MOSFET N-CH 150V 7.5A 8SOIC

onsemi
2,059 -

RFQ

FDS86240

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 7.5A (Ta) 6V, 10V 19.8mOhm @ 7.5A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 2570 pF @ 75 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7478DP-T1-E3

SI7478DP-T1-E3

MOSFET N-CH 60V 15A PPAK SO-8

Vishay Siliconix
2,931 -

RFQ

SI7478DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta) 4.5V, 10V 7.5mOhm @ 20A, 10V 3V @ 250µA 160 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TPH7R006PL,L1Q

TPH7R006PL,L1Q

MOSFET N-CH 60V 60A 8SOP

Toshiba Semiconductor and Storage
5,000 -

RFQ

TPH7R006PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 13.5mOhm @ 10A, 4.5V 2.5V @ 200µA 22 nC @ 10 V ±20V 1875 pF @ 30 V - 81W (Tc) 175°C (TJ) Surface Mount
SIR872DP-T1-GE3

SIR872DP-T1-GE3

MOSFET N-CH 150V 53.7A PPAK SO-8

Vishay Siliconix
2,479 -

RFQ

SIR872DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 53.7A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 64 nC @ 10 V ±20V 2130 pF @ 75 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS7650

FDMS7650

MOSFET N-CH 30V 36A/100A 8PQFN

onsemi
3,599 -

RFQ

FDMS7650

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 36A (Ta), 100A (Tc) 4.5V, 10V 0.99mOhm @ 36A, 10V 3V @ 250µA 209 nC @ 10 V ±20V 14965 pF @ 15 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR680DP-T1-GE3

SIDR680DP-T1-GE3

MOSFET N-CH 80V 32.8A/100A PPAK

Vishay Siliconix
2,561 -

RFQ

SIDR680DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 32.8A (Ta), 100A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 3.4V @ 250µA 105 nC @ 10 V ±20V 5150 pF @ 40 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MTM231230L

MTM231230L

MOSFET P-CH 20V 3A SMINI3-G1

Panasonic Electronic Components
2,232 -

RFQ

MTM231230L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 55mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 1000 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
MTM232230L

MTM232230L

MOSFET N-CH 20V 4.5A SMINI3-G1

Panasonic Electronic Components
3,179 -

RFQ

MTM232230L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.5V, 4.5V 28mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 1200 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
FDB20AN06A0

FDB20AN06A0

MOSFET N-CH 60V 9A/45A TO263AB

onsemi
3,199 -

RFQ

FDB20AN06A0

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta), 45A (Tc) 10V 20mOhm @ 45A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 950 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD107AN06LA0

FDD107AN06LA0

MOSFET N-CH 60V 3.4A/10.9A TO252

onsemi
2,461 -

RFQ

FDD107AN06LA0

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 3.4A (Ta), 10.9A (Tc) 5V, 10V 91mOhm @ 10.9A, 10V 3V @ 250µA 5.5 nC @ 5 V ±20V 360 pF @ 25 V - 25W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD6670AL

FDD6670AL

MOSFET N-CH 30V 84A D-PAK

onsemi
2,705 -

RFQ

FDD6670AL

Ficha técnica

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 250µA 56 nC @ 5 V ±20V 3845 pF @ 15 V - 83W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDG314P

FDG314P

MOSFET P-CH 25V 650MA SC88

onsemi
2,141 -

RFQ

FDG314P

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 25 V 650mA (Ta) 2.7V, 4.5V 1.1Ohm @ 500mA, 4.5V 1.5V @ 250µA 1.5 nC @ 4.5 V ±8V 63 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDI3652

FDI3652

MOSFET N-CH 100V 9A/61A I2PAK

onsemi
2,591 -

RFQ

FDI3652

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 61A (Tc) 6V, 10V 16mOhm @ 61A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP10AN06A0

FDP10AN06A0

MOSFET N-CH 60V 12A/75A TO220-3

onsemi
2,533 -

RFQ

FDP10AN06A0

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta), 75A (Tc) 6V, 10V 10.5mOhm @ 75A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 1840 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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