Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB029N06N3GATMA1

IPB029N06N3GATMA1

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies
3,577 -

RFQ

IPB029N06N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.9mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD15P10PLGBTMA1

SPD15P10PLGBTMA1

MOSFET P-CH 100V 15A TO252-3

Infineon Technologies
3,908 -

RFQ

SPD15P10PLGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 200mOhm @ 11.3A, 10V 2V @ 1.54mA 62 nC @ 10 V ±20V 1490 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD082N10N3GATMA1

IPD082N10N3GATMA1

MOSFET N-CH 100V 80A TO252-3

Infineon Technologies
2,810 -

RFQ

IPD082N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.2mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISC060N10NM6ATMA1

ISC060N10NM6ATMA1

TRENCH >=100V PG-TDSON-8

Infineon Technologies
2,326 -

RFQ

ISC060N10NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta), 97A (Tc) 8V, 10V 6mOhm @ 25A, 10V 3.3V @ 50µA 33 nC @ 10 V ±20V 2500 pF @ 50 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPN3R704PL,L1Q

TPN3R704PL,L1Q

MOSFET N-CH 40V 80A 8TSON

Toshiba Semiconductor and Storage
3,198 -

RFQ

TPN3R704PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.7mOhm @ 40A, 10V 2.4V @ 0.2mA 27 nC @ 10 V ±20V 2500 pF @ 20 V - 630mW (Ta), 86W (Tc) 175°C Surface Mount
AUIRLR3410TRL

AUIRLR3410TRL

MOSFET N-CH 100V 17A DPAK

Infineon Technologies
3,012 -

RFQ

AUIRLR3410TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 105mOhm @ 10A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC120N04S6L009ATMA1

IAUC120N04S6L009ATMA1

MOSFET N-CH 40V 150A TDSON-8-34

Infineon Technologies
3,466 -

RFQ

IAUC120N04S6L009ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™-6 Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 960mOhm @ 60A, 10V 2V @ 90µA 128 nC @ 10 V ±16V 7806 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7461DP-T1-E3

SI7461DP-T1-E3

MOSFET P-CH 60V 8.6A PPAK SO-8

Vishay Siliconix
2,295 -

RFQ

SI7461DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 8.6A (Ta) 4.5V, 10V 14.5mOhm @ 14.4A, 10V 3V @ 250µA 190 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7461DP-T1-GE3

SI7461DP-T1-GE3

MOSFET P-CH 60V 8.6A PPAK SO-8

Vishay Siliconix
3,075 -

RFQ

SI7461DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 8.6A (Ta) 4.5V, 10V 14.5mOhm @ 14.4A, 10V 3V @ 250µA 190 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DN2625K4-G

DN2625K4-G

MOSFET N-CH 250V 1.1A TO252

Microchip Technology
2,493 -

RFQ

DN2625K4-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 1.1A (Tj) 0V 3.5Ohm @ 1A, 0V - 7.04 nC @ 1.5 V ±20V 1000 pF @ 25 V Depletion Mode - -55°C ~ 150°C (TJ) Surface Mount
SQJ412EP-T1_GE3

SQJ412EP-T1_GE3

MOSFET N-CH 40V 32A PPAK SO-8

Vishay Siliconix
3,237 -

RFQ

SQJ412EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 32A (Tc) 4.5V, 10V 4.1mOhm @ 10.3A, 10V 2.5V @ 250µA 120 nC @ 10 V ±20V 5950 pF @ 20 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3710ZTRPBF

IRFR3710ZTRPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
2,705 -

RFQ

IRFR3710ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3710ZTRLPBF

IRFR3710ZTRLPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
3,817 -

RFQ

IRFR3710ZTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI5457DC-T1-GE3

SI5457DC-T1-GE3

MOSFET P-CH 20V 6A 1206-8

Vishay Siliconix
2,971 -

RFQ

SI5457DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 4.5V 36mOhm @ 4.9A, 4.5V 1.4V @ 250µA 38 nC @ 10 V ±12V 1000 pF @ 10 V - 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC030N08NS5ATMA1

BSC030N08NS5ATMA1

MOSFET N-CH 80V 100A TDSON

Infineon Technologies
3,401 -

RFQ

BSC030N08NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.8V @ 95µA 76 nC @ 10 V ±20V 5600 pF @ 40 V - 2.5W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4126DY-T1-GE3

SI4126DY-T1-GE3

MOSFET N-CH 30V 39A 8SO

Vishay Siliconix
2,094 -

RFQ

SI4126DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 39A (Tc) 4.5V, 10V 2.75mOhm @ 15A, 10V 2.5V @ 250µA 105 nC @ 10 V ±20V 4405 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP135H6906XTSA1

BSP135H6906XTSA1

MOSFET N-CH 600V 120MA SOT223-4

Infineon Technologies
2,268 -

RFQ

BSP135H6906XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS8460

FDMS8460

MOSFET N-CH 40V 25A/49A 8PQFN

onsemi
3,056 -

RFQ

FDMS8460

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta), 49A (Tc) 4.5V, 10V 2.2mOhm @ 25A, 10V 3V @ 250µA 110 nC @ 10 V ±20V 7205 pF @ 20 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RS1E220ATTB1

RS1E220ATTB1

MOSFET P-CH 30V 22A/76A 8HSOP

Rohm Semiconductor
2,478 -

RFQ

RS1E220ATTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 76A (Tc) 4.5V, 10V 4.1mOhm @ 22A, 10V 2.5V @ 2mA 130 nC @ 10 V ±20V 5850 pF @ 15 V - 3W (Ta) 150°C (TJ) Surface Mount
NTMFS5C646NLT1G

NTMFS5C646NLT1G

MOSFET N-CH 60V 19A 5DFN

onsemi
3,222 -

RFQ

NTMFS5C646NLT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 19A (Ta) 4.5V, 10V 4.7mOhm @ 50A, 10V 2V @ 250µA 33.7 nC @ 10 V ±20V 2164 pF @ 25 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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