Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDH15N50

FDH15N50

MOSFET N-CH 500V 15A TO247-3

onsemi
3,042 -

RFQ

FDH15N50

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 380mOhm @ 7.5A, 10V 4V @ 250µA 41 nC @ 10 V ±30V 1850 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDH27N50

FDH27N50

MOSFET N-CH 500V 27A TO247-3

onsemi
3,203 -

RFQ

FDH27N50

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) 10V 190mOhm @ 13.5A, 10V 4V @ 250µA 67 nC @ 10 V ±30V 3550 pF @ 25 V - 450W (Tc) -55°C ~ 175°C (TJ) Through Hole
TPH3R704PL,L1Q

TPH3R704PL,L1Q

MOSFET N-CH 40V 92A 8SOP

Toshiba Semiconductor and Storage
2,007 -

RFQ

TPH3R704PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 92A (Tc) 4.5V, 10V 3.7mOhm @ 46A, 10V 2.4V @ 0.2mA 27 nC @ 10 V ±20V 2500 pF @ 20 V - 960mW (Ta), 81W (Tc) 175°C Surface Mount
IXTY1R6N50D2-TRL

IXTY1R6N50D2-TRL

MOSFET N-CH 500V 1.6A TO252AA

IXYS
2,353 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tj) 0V 2.3Ohm @ 800mA, 0V 4.5V @ 250µA 23.7 nC @ 5 V ±20V 645 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RS1L151ATTB1

RS1L151ATTB1

PCH -60V -56A, HSOP8, POWER MOSF

Rohm Semiconductor
3,743 -

RFQ

RS1L151ATTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 4.5V, 10V 11.3mOhm @ 15A, 10V 2.5V @ 1mA 130 nC @ 10 V ±20V 6900 pF @ 30 V - 3W (Ta) 150°C (TJ) Surface Mount
TPN2R304PL,L1Q

TPN2R304PL,L1Q

MOSFET N-CH 40V 80A 8TSON

Toshiba Semiconductor and Storage
3,656 -

RFQ

TPN2R304PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 2.3mOhm @ 40A, 10V 2.4V @ 0.3mA 41 nC @ 10 V ±20V 3600 pF @ 20 V - 630mW (Ta), 104W (Tc) 175°C Surface Mount
AON6290

AON6290

MOSFET N CH 100V 28A DFN5X6

Alpha & Omega Semiconductor Inc.
3,053 -

RFQ

AON6290

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Ta), 85A (Tc) 6V, 10V 4.6mOhm @ 20A, 10V 3.4V @ 250µA 90 nC @ 10 V ±20V 4600 pF @ 50 V - 7.3W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR668DP-T1-GE3

SIDR668DP-T1-GE3

MOSFET N-CH 100V 23.2A/95A PPAK

Vishay Siliconix
2,297 -

RFQ

SIDR668DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 23.2A (Ta), 95A (Tc) 7.5V, 10V 4.8mOhm @ 20A, 10V 3.4V @ 250µA 108 nC @ 10 V ±20V 5400 pF @ 50 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ4401EY-T1_BE3

SQ4401EY-T1_BE3

MOSFET P-CH 40V 17.3A 8SOIC

Vishay Siliconix
2,323 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 17.3A (Tc) 4.5V, 10V 14mOhm @ 10.5A, 10V 2.5V @ 250µA 115 nC @ 10 V ±20V 4250 pF @ 20 V - 7.14W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN1R0-40YLDX

PSMN1R0-40YLDX

MOSFET N-CH 40V 280A LFPAK56

Nexperia USA Inc.
2,727 -

RFQ

PSMN1R0-40YLDX

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 280A (Ta) 4.5V, 10V 1.1mOhm @ 25A, 10V 2.2V @ 1mA 127 nC @ 10 V ±20V 8845 pF @ 20 V - 198W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7463DP-T1-E3

SI7463DP-T1-E3

MOSFET P-CH 40V 11A PPAK SO-8

Vishay Siliconix
2,667 -

RFQ

SI7463DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 11A (Ta) 4.5V, 10V 9.2mOhm @ 18.6A, 10V 3V @ 250µA 140 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TPN1R603PL,L1Q

TPN1R603PL,L1Q

MOSFET N-CH 30V 80A 8TSON

Toshiba Semiconductor and Storage
3,152 -

RFQ

TPN1R603PL,L1Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 1.6mOhm @ 40A, 10V 2.1V @ 300µA 41 nC @ 10 V ±20V 3900 pF @ 15 V - 104W (Tc) 175°C Surface Mount
RSJ250P10TL

RSJ250P10TL

MOSFET P-CH 100V 25A LPTS

Rohm Semiconductor
3,760 -

RFQ

RSJ250P10TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 25A (Ta) 4V, 10V 63mOhm @ 25A, 10V 2.5V @ 1mA 60 nC @ 5 V ±20V 8000 pF @ 25 V - 50W (Tc) 150°C (TJ) Surface Mount
RS1E260ATTB1

RS1E260ATTB1

MOSFET P-CH 30V 26A/80A 8HSOP

Rohm Semiconductor
3,343 -

RFQ

RS1E260ATTB1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 80A (Tc) 4.5V, 10V 3.1mOhm @ 26A, 10V 2.5V @ 1mA 175 nC @ 10 V ±20V 7850 pF @ 15 V - 3W (Ta) 150°C (TJ) Surface Mount
SI4434DY-T1-GE3

SI4434DY-T1-GE3

MOSFET N-CH 250V 2.1A 8SO

Vishay Siliconix
3,437 -

RFQ

SI4434DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 2.1A (Ta) 6V, 10V 155mOhm @ 3A, 10V 4V @ 250µA 50 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS86263P

FDMS86263P

MOSFET P-CH 150V 4.4A/22A 8PQFN

onsemi
1,955 -

RFQ

FDMS86263P

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active P-Channel MOSFET (Metal Oxide) 150 V 4.4A (Ta), 22A (Tc) 6V, 10V 53mOhm @ 4.4A, 10V 4V @ 250µA 63 nC @ 10 V ±25V 3905 pF @ 75 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM50P08-25L_GE3

SQM50P08-25L_GE3

MOSFET P-CHANNEL 80V 50A TO263

Vishay Siliconix
3,155 -

RFQ

SQM50P08-25L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 50A (Tc) 4.5V, 10V 25mOhm @ 12.5A, 10V 2.5V @ 250µA 137 nC @ 10 V ±20V 5350 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD050N10N5ATMA1

IPD050N10N5ATMA1

MOSFET N-CH 100V 80A TO252-3

Infineon Technologies
3,464 -

RFQ

IPD050N10N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 5mOhm @ 40A, 10V 3.8V @ 84µA 64 nC @ 10 V ±20V 4700 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC160N15NS5ATMA1

BSC160N15NS5ATMA1

MOSFET N-CH 150V 56A TDSON

Infineon Technologies
3,855 -

RFQ

BSC160N15NS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 56A (Tc) 8V, 10V 16mOhm @ 28A, 10V 4.6V @ 60µA 23.1 nC @ 10 V ±20V 1820 pF @ 75 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF4905STRRPBF

IRF4905STRRPBF

MOSFET P-CH 55V 42A D2PAK

Infineon Technologies
2,883 -

RFQ

IRF4905STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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