Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HAT2116H-EL-E

HAT2116H-EL-E

MOSFET N-CH 30V 30A LFPAK

Renesas Electronics America Inc
2,011 -

RFQ

HAT2116H-EL-E

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) 4.5V, 10V 8.2mOhm @ 15A, 10V - 26 nC @ 10 V ±20V 1650 pF @ 10 V - 15W (Tc) 150°C (TJ) Surface Mount
IRF6635TR1

IRF6635TR1

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
2,361 -

RFQ

IRF6635TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V 2.35V @ 250µA 71 nC @ 4.5 V ±20V 5970 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6635

IRF6635

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
3,773 -

RFQ

IRF6635

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V 2.35V @ 250µA 71 nC @ 4.5 V ±20V 5970 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
TPCA8016-H(TE12LQM

TPCA8016-H(TE12LQM

MOSFET N-CH 60V 25A 8-SOPA

Toshiba Semiconductor and Storage
3,780 -

RFQ

TPCA8016-H(TE12LQM

Ficha técnica

Digi-Reel® - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 25A (Ta) - 21mOhm @ 13A, 10V 2.3V @ 1mA 22 nC @ 10 V - 1375 pF @ 10 V - - - Surface Mount
TPCA8007-H(TE12L,Q

TPCA8007-H(TE12L,Q

MOSFET N-CH 100V 20A 8-SOPA

Toshiba Semiconductor and Storage
3,584 -

RFQ

TPCA8007-H(TE12L,Q

Ficha técnica

Cut Tape (CT) * Obsolete - - - - - - - - - - - - - -
TPCA8009-H(TE12L,Q

TPCA8009-H(TE12L,Q

MOSFET N-CH 150V 7A 8SOP

Toshiba Semiconductor and Storage
2,580 -

RFQ

TPCA8009-H(TE12L,Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 7A (Ta) 10V 350mOhm @ 3.5A, 10V 4V @ 1mA 10 nC @ 10 V ±20V 600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8010-H(TE12L,Q

TPCA8010-H(TE12L,Q

MOSFET N-CH 200V 5.5A 8SOP

Toshiba Semiconductor and Storage
2,149 -

RFQ

TPCA8010-H(TE12L,Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) π-MOSV Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Ta) 10V 450mOhm @ 2.7A, 10V 4V @ 1mA 10 nC @ 10 V ±20V 600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
TPCA8008-H(TE12L,Q

TPCA8008-H(TE12L,Q

MOSFET N-CH 250V 4A 8SOP

Toshiba Semiconductor and Storage
3,002 -

RFQ

TPCA8008-H(TE12L,Q

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4A (Ta) 10V 580mOhm @ 2A, 10V 4V @ 1mA 10 nC @ 10 V ±20V 600 pF @ 10 V - 1.6W (Ta), 45W (Tc) 150°C (TJ) Surface Mount
IRFB4212PBF

IRFB4212PBF

MOSFET N-CH 100V 18A TO220AB

Infineon Technologies
2,563 -

RFQ

IRFB4212PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 72.5mOhm @ 13A, 10V 5V @ 250µA 23 nC @ 10 V ±20V 550 pF @ 50 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6611

IRF6611

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
3,810 -

RFQ

IRF6611

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 150A (Tc) 4.5V, 10V 2.6mOhm @ 27A, 10V 2.25V @ 250µA 56 nC @ 4.5 V ±20V 4860 pF @ 15 V - 3.9W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6626

IRF6626

MOSFET N-CH 30V 16A DIRECTFET

Infineon Technologies
3,361 -

RFQ

IRF6626

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 72A (Tc) 4.5V, 10V 5.4mOhm @ 16A, 10V 2.35V @ 250µA 29 nC @ 4.5 V ±20V 2380 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6636

IRF6636

MOSFET N-CH 20V 18A DIRECTFET

Infineon Technologies
3,374 -

RFQ

IRF6636

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 18A (Ta), 81A (Tc) 4.5V, 10V 4.5mOhm @ 18A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2420 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
MIC94031BM4 TR

MIC94031BM4 TR

MOSFET P-CH 16V 1A SOT-143

Microchip Technology
2,786 -

RFQ

MIC94031BM4 TR

Ficha técnica

Tape & Reel (TR) TinyFET® Obsolete P-Channel MOSFET (Metal Oxide) 16 V 1A (Ta) 2.7V, 10V 450mOhm @ 100mA, 10V 1.4V @ 250µA - 16V 100 pF @ 12 V - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MIC94031YM4-TR

MIC94031YM4-TR

MOSFET P-CH 16V 1A SOT-143

Microchip Technology
3,811 -

RFQ

MIC94031YM4-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TinyFET® Obsolete P-Channel MOSFET (Metal Oxide) 16 V 1A (Ta) 2.7V, 10V 450mOhm @ 100mA, 10V 1.4V @ 250µA - 16V 100 pF @ 12 V - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF2907ZS-7PPBF

IRF2907ZS-7PPBF

MOSFET N-CH 75V 160A D2PAK

Infineon Technologies
2,696 -

RFQ

IRF2907ZS-7PPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 3.8mOhm @ 110A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7580 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7416PBF

IRF7416PBF

MOSFET P-CH 30V 10A 8SO

Infineon Technologies
2,045 -

RFQ

IRF7416PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 20mOhm @ 5.6A, 10V 1V @ 250µA 92 nC @ 10 V ±20V 1700 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
62-0063PBF

62-0063PBF

MOSFET N-CH 12V 15A 8SO

Infineon Technologies
2,138 -

RFQ

62-0063PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 15A (Ta) 2.8V, 4.5V 8mOhm @ 15A, 4.5V 1.9V @ 250µA 40 nC @ 4.5 V ±12V 2550 pF @ 6 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7832Z

IRF7832Z

MOSFET N-CH 30V 21A 8SO

Infineon Technologies
2,555 -

RFQ

IRF7832Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.35V @ 250µA 45 nC @ 4.5 V ±20V 3860 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS52N15DPBF

IRFS52N15DPBF

MOSFET N-CH 150V 51A D2PAK

Infineon Technologies
2,360 -

RFQ

IRFS52N15DPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 51A (Tc) 10V 32mOhm @ 36A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2770 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6610TR1

IRF6610TR1

MOSFET N-CH 20V 15A DIRECTFET

Infineon Technologies
2,135 -

RFQ

IRF6610TR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 15A (Ta), 66A (Tc) 4.5V, 10V 6.8mOhm @ 15A, 10V 2.55V @ 250µA 17 nC @ 4.5 V ±20V 1520 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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