Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR1010Z

AUIRFR1010Z

AUIRFR1010 - 55V-60V N-CHANNEL A

Infineon Technologies
2,879 -

RFQ

AUIRFR1010Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44VZSPBF

IRFZ44VZSPBF

IRFZ44 - TRENCH 40<-<100V

Infineon Technologies
3,089 -

RFQ

IRFZ44VZSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R1K4C6ATMA1

IPD60R1K4C6ATMA1

IPD60R1K4 - LOW POWER_LEGACY

Infineon Technologies
2,805 -

RFQ

IPD60R1K4C6ATMA1

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ECH8690-TL-H

ECH8690-TL-H

COMPLEMENTARY DUAL POWER MOSFET

onsemi
2,760 -

RFQ

ECH8690-TL-H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTD5862NT4G

NTD5862NT4G

POWER FIELD-EFFECT TRANSISTOR, 9

onsemi
3,385 -

RFQ

NTD5862NT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 98A (Tc) 10V 5.7mOhm @ 45A, 10V 4V @ 250µA 82 nC @ 10 V ±20V 6000 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN7R0-100BS,118

PSMN7R0-100BS,118

NEXPERIA PSMN7R0-100BS - 100A, 1

NXP Semiconductors
2,643 -

RFQ

PSMN7R0-100BS,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 6.8mOhm @ 15A, 10V 4V @ 1mA 125 nC @ 10 V ±20V 6686 pF @ 50 V - 269W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3806TRL

AUIRFS3806TRL

MOSFET_)40V,60V)

Infineon Technologies
3,061 -

RFQ

AUIRFS3806TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NDS355AN-F169

NDS355AN-F169

N-CHANNEL LOGIC LEVEL ENHANCEMEN

Fairchild Semiconductor
3,378 -

RFQ

NDS355AN-F169

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.7A (Ta) 4.5V, 10V 85mOhm @ 1.9A, 10V 2V @ 250µA 5 nC @ 5 V ±20V 195 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF2804S-7P

AUIRF2804S-7P

AUIRF2804 - 20V-40V N-CHANNEL AU

Infineon Technologies
3,706 -

RFQ

AUIRF2804S-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1K4909096

RF1K4909096

RF1K4909096 - POWER FIELD-EFFECT

Harris Corporation
2,395 -

RFQ

RF1K4909096

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7K89-100EX

BUK7K89-100EX

NEXPERIA BUK7K89 - DUAL N-CHANNE

NXP Semiconductors
2,860 -

RFQ

BUK7K89-100EX

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP50R280CEXKSA1

IPP50R280CEXKSA1

CONSUMER

Infineon Technologies
3,111 -

RFQ

IPP50R280CEXKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 13V 280mOhm @ 4.2A, 13V 3.5V @ 350µA 32.6 nC @ 10 V ±20V 773 pF @ 100 V Super Junction 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL080N120SC1

NTHL080N120SC1

SILICON CARBIDE MOSFET, N-CHANNE

onsemi
2,978 -

RFQ

NTHL080N120SC1

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 44A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1670 pF @ 800 V - 348W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB38N20DPBF

IRFB38N20DPBF

IRFB38N20 - 12V-300V N-CHANNEL P

Infineon Technologies
3,558 -

RFQ

IRFB38N20DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) 10V 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V ±20V 2900 pF @ 25 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD50N04S308ATMA1

IPD50N04S308ATMA1

IPD50N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
2,855 -

RFQ

IPD50N04S308ATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.5mOhm @ 50A, 10V 4V @ 40µA 35 nC @ 10 V ±20V 2350 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6617TRPBF

IRF6617TRPBF

IRF6617 - 12V-300V N-CHANNEL POW

Infineon Technologies
3,599 -

RFQ

IRF6617TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 55A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDP032N08B

FDP032N08B

N-CHANNEL POWERTRENCH MOSFET 80V

Fairchild Semiconductor
3,432 -

RFQ

FDP032N08B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPL60R285P7AUMA1

IPL60R285P7AUMA1

LOW POWER_NEW

Infineon Technologies
2,363 -

RFQ

IPL60R285P7AUMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 59W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NVMFS5844NLT3G

NVMFS5844NLT3G

POWER MOSFET, SINGLE N-CHANNEL

onsemi
3,520 -

RFQ

NVMFS5844NLT3G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 11.2A (Ta) 4.5V, 10V 12mOhm @ 10A, 10V 2.3V @ 250µA 30 nC @ 10 V ±20V 1460 pF @ 25 V - 3.7W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
GT105N10F

GT105N10F

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Goford Semiconductor
2,458 -

RFQ

GT105N10F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 4.5V, 10V 10.5mOhm @ 11A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V - - 20.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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