Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDMC7200

FDMC7200

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,520 -

RFQ

FDMC7200

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMC6696P

FDMC6696P

FDMC6696 - P-CHANNEL POWERTRENCH

onsemi
2,089 -

RFQ

FDMC6696P

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMS86500DC

FDMS86500DC

N-CHANNEL DUAL COOLTM 56 POWER T

onsemi
3,887 -

RFQ

FDMS86500DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 108A (Tc) 8V, 10V 2.3mOhm @ 29A, 10V 4.5V @ 250µA 107 nC @ 10 V ±20V 7680 pF @ 30 V - 3.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPH3360-TL-W

CPH3360-TL-W

CPH3360 - P-CHANNEL POWER MOSFET

onsemi
3,168 -

RFQ

CPH3360-TL-W

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4V, 10V 303mOhm @ 800mA, 10V 2.6V @ 1mA 2.2 nC @ 10 V ±20V 82 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
ECH8654-TL-HQ

ECH8654-TL-HQ

ECH8654 - MOSFET 2 P-CHANNEL ARR

onsemi
2,180 -

RFQ

ECH8654-TL-HQ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB407N30NATMA1

IPB407N30NATMA1

TRENCH >=100V

Infineon Technologies
3,396 -

RFQ

IPB407N30NATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 300 V 44A (Tc) 10V 40.7mOhm @ 44A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7180 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI65R600C6XKSA1

IPI65R600C6XKSA1

IPI65R600 - 650V AND 700V COOLMO

Infineon Technologies
2,439 -

RFQ

IPI65R600C6XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCB199N65S3

FCB199N65S3

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
2,009 -

RFQ

FCB199N65S3

Ficha técnica

Bulk SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 199mOhm @ 7A, 10V 4.5V @ 1.4mA 30 nC @ 10 V ±30V 1225 pF @ 400 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK9628-55A,118

BUK9628-55A,118

N-CHANNEL TRENCHMOS LOGIC LEVEL

Nexperia USA Inc.
2,727 -

RFQ

BUK9628-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 5V 25mOhm @ 15A, 10V 2V @ 1mA - ±10V 1725 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFD5C478NLWFT1G

NVMFD5C478NLWFT1G

DUAL N-CHANNEL POWER MOSFET 40 V

onsemi
3,607 -

RFQ

NVMFD5C478NLWFT1G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPL65R650C6SE8211ATMA1

IPL65R650C6SE8211ATMA1

IPL65R650 - 650V AND 700V COOLMO

Infineon Technologies
3,853 -

RFQ

IPL65R650C6SE8211ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NVMFS6B05NLWFT3G

NVMFS6B05NLWFT3G

NVMFS6B05 - SINGLE N-CHANNEL POW

onsemi
2,445 -

RFQ

NVMFS6B05NLWFT3G

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 114A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 3V @ 250µA 6.8 nC @ 10 V ±16V 3980 pF @ 25 V - 3.8W (Ta), 165W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVD3055L170T4G

NVD3055L170T4G

N-CHANNEL POWER LOGIC LEVEL MOSF

onsemi
2,668 -

RFQ

NVD3055L170T4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) 5V 170mOhm @ 4.5A, 5V 2V @ 250µA 10 nC @ 5 V ±15V 275 pF @ 25 V - 1.5W (Ta), 28.5W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDMS8670S

FDMS8670S

POWER FIELD-EFFECT TRANSISTOR, 2

onsemi
2,004 -

RFQ

FDMS8670S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 42A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 3V @ 1mA 73 nC @ 10 V ±20V 4000 pF @ 15 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMBF4118

MMBF4118

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
2,018 -

RFQ

MMBF4118

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7623-75A,118

BUK7623-75A,118

N-CHANNEL TRENCHMOS STANDARD LEV

Nexperia USA Inc.
2,075 -

RFQ

BUK7623-75A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 53A (Tc) 10V 23mOhm @ 25A, 10V 4V @ 1mA - ±20V 2385 pF @ 25 V - 138W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK762R6-40E,118

BUK762R6-40E,118

NOW NEXPERIA BUK762R6-40E 100A

NXP Semiconductors
2,324 -

RFQ

BUK762R6-40E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 7130 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ)
IRLR3717TRRPBF

IRLR3717TRRPBF

TRENCH <= 40V

Infineon Technologies
3,392 -

RFQ

IRLR3717TRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 120A (Tc) 4.5V, 10V 4mOhm @ 15A, 10V 2.45V @ 250µA 31 nC @ 4.5 V ±20V 2830 pF @ 10 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA410NZT

FDMA410NZT

ULTRA THIN N-CHANNEL 1.5 V POWER

Fairchild Semiconductor
3,989 -

RFQ

FDMA410NZT

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 9.5A (Ta) 1.5V, 4.5V 23mOhm @ 9.5A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1310 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6375

FDS6375

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,769 -

RFQ

FDS6375

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 2.5V, 4.5V 24mOhm @ 8A, 4.5V 1.5V @ 250µA 36 nC @ 4.5 V ±8V 2694 pF @ 10 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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