Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR7821PBF

IRLR7821PBF

MOSFET N-CH 30V 65A DPAK

International Rectifier
2,595 -

RFQ

IRLR7821PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 10mOhm @ 15A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1030 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SP001434884

SP001434884

IPN60R1K0CEATMA1 - MOSFET

Infineon Technologies
3,439 -

RFQ

SP001434884

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 6.8A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
MMBF170

MMBF170

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,411 -

RFQ

MMBF170

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 40 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP80N06S2-09

IPP80N06S2-09

IPP80N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
2,740 -

RFQ

IPP80N06S2-09

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD03N60C3

SPD03N60C3

MOSFET N-CH 600V 3.2A TO252

Infineon Technologies
3,465 -

RFQ

SPD03N60C3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) - 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN6R0-30YLB,115

PSMN6R0-30YLB,115

NOW NEXPERIA PSMN6R0-25YLD - 61A

NXP USA Inc.
3,107 -

RFQ

PSMN6R0-30YLB,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 71A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V 1.95V @ 1mA 19 nC @ 10 V ±20V 1088 pF @ 15 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DI050N04PT-AQ

DI050N04PT-AQ

MOSFET, 40V, 50A, 37W

Diotec Semiconductor
3,139 -

RFQ

DI050N04PT-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 6.5mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3255 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DI048N04PT-AQ

DI048N04PT-AQ

MOSFET 40V 48A N 31W

Diotec Semiconductor
2,376 -

RFQ

DI048N04PT-AQ

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 48A (Tc) 4.5V, 10V 7.6mOhm @ 12A, 10V 2.5V @ 250µA 48.5 nC @ 10 V ±20V 2268 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN015-100YLX

PSMN015-100YLX

PSMN015-100YL - N-CHANNEL 100V

NXP USA Inc.
2,461 -

RFQ

PSMN015-100YLX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 69A (Tc) 5V, 10V 14.7mOhm @ 20A, 10V 2.1V @ 1mA 86.3 nC @ 10 V ±20V 6139 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ)
SI3443DV

SI3443DV

MOSFET P-CH 20V 4.4A MICRO6

Fairchild Semiconductor
3,177 -

RFQ

SI3443DV

Ficha técnica

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±12V 1079 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NX7002AK.215

NX7002AK.215

NOW NEXPERIA NX7002AK - SMALL SI

NXP USA Inc.
2,501 -

RFQ

NX7002AK.215

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP08N80C3

SPP08N80C3

SPP08N80 - 800V COOLMOS N-CHANNE

Infineon Technologies
2,976 -

RFQ

SPP08N80C3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
DI050N06D1

DI050N06D1

MOSFET, 60V, 50A, N, 42W

Diotec Semiconductor
3,376 -

RFQ

DI050N06D1

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 65 V 50A (Tc) 4.5V, 10V 11mOhm @ 10A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 825 pF @ 30 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SP001461194

SP001461194

IPN50R2K0CEATMA1 - MOSFET

Infineon Technologies
3,952 -

RFQ

SP001461194

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NDT454P

NDT454P

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
3,631 -

RFQ

NDT454P

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 5.9A (Ta) 4.5V, 10V 50mOhm @ 5.9A, 10V 2.7V @ 250µA 40 nC @ 10 V ±20V 950 pF @ 15 V - 3W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NDT451AN

NDT451AN

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
2,300 -

RFQ

NDT451AN

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 35mOhm @ 7.2A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 720 pF @ 15 V - 3W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NDT3055

NDT3055

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,606 -

RFQ

NDT3055

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 10V 100mOhm @ 4A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 250 pF @ 30 V - 1.1W (Ta) -65°C ~ 150°C (TJ) Surface Mount
NDS351N

NDS351N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,129 -

RFQ

NDS351N

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.1A (Ta) 4.5V, 10V 160mOhm @ 1.4A, 10V 2V @ 250µA 3.5 nC @ 5 V ±20V 140 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDB6060L

NDB6060L

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,830 -

RFQ

NDB6060L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 5V, 10V 20mOhm @ 24A, 10V 2V @ 250µA 60 nC @ 5 V ±16V 2000 pF @ 25 V - 100W (Tc) -65°C ~ 175°C (TJ) Surface Mount
NDS9407

NDS9407

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,762 -

RFQ

NDS9407

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 150mOhm @ 3A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 732 pF @ 30 V - 1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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