Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
GA05JT12-263

GA05JT12-263

TRANS SJT 1200V 15A D2PAK

GeneSiC Semiconductor
3,236 -

RFQ

GA05JT12-263

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 15A (Tc) - - - - - - - 106W (Tc) 175°C (TJ) Surface Mount
GA05JT12-247

GA05JT12-247

TRANS SJT 1200V 5A TO247AB

GeneSiC Semiconductor
3,776 -

RFQ

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 5A (Tc) - 280mOhm @ 5A - - - - - 106W (Tc) 175°C (TJ) Through Hole
GA10JT12-247

GA10JT12-247

TRANS SJT 1200V 10A TO247AB

GeneSiC Semiconductor
3,174 -

RFQ

GA10JT12-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 10A (Tc) - 140mOhm @ 10A - - - - - 170W (Tc) 175°C (TJ) Through Hole
GA20JT12-247

GA20JT12-247

TRANS SJT 1200V 20A TO247AB

GeneSiC Semiconductor
2,543 -

RFQ

GA20JT12-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 20A (Tc) - 70mOhm @ 20A - - - - - 282W (Tc) 175°C (TJ) Through Hole
GA50JT17-247

GA50JT17-247

TRANS SJT 1700V 100A TO247

GeneSiC Semiconductor
3,183 -

RFQ

GA50JT17-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 100A (Tc) - 25mOhm @ 50A - - - - - 583W (Tc) 175°C (TJ) Through Hole
GA05JT01-46

GA05JT01-46

TRANS SJT 100V 9A TO46

GeneSiC Semiconductor
3,904 -

RFQ

GA05JT01-46

Ficha técnica

Bulk - Obsolete - SiC (Silicon Carbide Junction Transistor) 100 V 9A (Tc) - 240mOhm @ 5A - - - - - 20W (Tc) -55°C ~ 225°C (TJ) Through Hole
G3R160MT12J

G3R160MT12J

SIC MOSFET N-CH 22A TO263-7

GeneSiC Semiconductor
2,578 -

RFQ

G3R160MT12J

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 15V 192mOhm @ 10A, 15V 2.69V @ 5mA 28 nC @ 15 V ±15V 730 pF @ 800 V - 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GA100JT12-227

GA100JT12-227

TRANS SJT 1200V 160A SOT227

GeneSiC Semiconductor
2,499 -

RFQ

GA100JT12-227

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 160A (Tc) - 10mOhm @ 100A - - - 14400 pF @ 800 V - 535W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
GA20SICP12-247

GA20SICP12-247

TRANS SJT 1200V 45A TO247AB

GeneSiC Semiconductor
3,660 -

RFQ

GA20SICP12-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1200 V 45A (Tc) - 50mOhm @ 20A - - - 3091 pF @ 800 V - 282W (Tc) -55°C ~ 175°C (TJ) Through Hole
GA50JT12-263

GA50JT12-263

TRANSISTOR 1200V 100A TO263-7

GeneSiC Semiconductor
2,802 -

RFQ

Tube * Obsolete - - - - - - - - - - - - - -
GA100JT17-227

GA100JT17-227

TRANS SJT 1700V 160A SOT227

GeneSiC Semiconductor
3,296 -

RFQ

GA100JT17-227

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 160A (Tc) - 10mOhm @ 100A - - - 14400 pF @ 800 V - 535W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
G2R1000MT17D

G2R1000MT17D

SIC MOSFET N-CH 4A TO247-3

GeneSiC Semiconductor
9,514 -

RFQ

G2R1000MT17D

Ficha técnica

Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA - +20V, -5V 139 pF @ 1000 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R350MT12J

G3R350MT12J

SIC MOSFET N-CH 11A TO263-7

GeneSiC Semiconductor
6,800 -

RFQ

G3R350MT12J

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 11A (Tc) 15V 420mOhm @ 4A, 15V 2.69V @ 2mA 12 nC @ 15 V ±15V 334 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G2R1000MT17J

G2R1000MT17J

SIC MOSFET N-CH 3A TO263-7

GeneSiC Semiconductor
17,210 -

RFQ

G2R1000MT17J

Ficha técnica

Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 3A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA - +20V, -10V 139 pF @ 1000 V - 54W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R450MT17J

G3R450MT17J

SIC MOSFET N-CH 9A TO263-7

GeneSiC Semiconductor
7,574 -

RFQ

G3R450MT17J

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 9A (Tc) 15V 585mOhm @ 4A, 15V 2.7V @ 2mA 18 nC @ 15 V ±15V 454 pF @ 1000 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R75MT12K

G3R75MT12K

SIC MOSFET N-CH 41A TO247-4

GeneSiC Semiconductor
951 -

RFQ

G3R75MT12K

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 41A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 207W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R75MT12J

G3R75MT12J

SIC MOSFET N-CH 42A TO263-7

GeneSiC Semiconductor
2,540 -

RFQ

G3R75MT12J

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 42A (Tc) 15V 90mOhm @ 20A, 15V 2.69V @ 7.5mA 54 nC @ 15 V ±15V 1560 pF @ 800 V - 224W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R160MT17D

G3R160MT17D

SIC MOSFET N-CH 21A TO247-3

GeneSiC Semiconductor
539 -

RFQ

G3R160MT17D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 21A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R160MT17J

G3R160MT17J

SIC MOSFET N-CH 22A TO263-7

GeneSiC Semiconductor
1,690 -

RFQ

G3R160MT17J

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 22A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 187W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R40MT12D

G3R40MT12D

SIC MOSFET N-CH 71A TO247-3

GeneSiC Semiconductor
248 -

RFQ

G3R40MT12D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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