Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G3R40MT12K

G3R40MT12K

SIC MOSFET N-CH 71A TO247-4

GeneSiC Semiconductor
611 -

RFQ

G3R40MT12K

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 71A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R40MT12J

G3R40MT12J

SIC MOSFET N-CH 75A TO263-7

GeneSiC Semiconductor
680 -

RFQ

G3R40MT12J

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 75A (Tc) 15V 48mOhm @ 35A, 15V 2.69V @ 10mA 106 nC @ 15 V ±15V 2929 pF @ 800 V - 374W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R30MT12K

G3R30MT12K

SIC MOSFET N-CH 90A TO247-4

GeneSiC Semiconductor
2,828 -

RFQ

G3R30MT12K

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 90A (Tc) 15V 36mOhm @ 50A, 15V 2.69V @ 12mA 155 nC @ 15 V ±15V 3901 pF @ 800 V - 400W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R30MT12J

G3R30MT12J

SIC MOSFET N-CH 96A TO263-7

GeneSiC Semiconductor
529 -

RFQ

G3R30MT12J

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 96A (Tc) 15V 36mOhm @ 50A, 15V 2.69V @ 12mA 155 nC @ 15 V ±15V 3901 pF @ 800 V - 459W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G3R45MT17D

G3R45MT17D

SIC MOSFET N-CH 61A TO247-3

GeneSiC Semiconductor
146 -

RFQ

G3R45MT17D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 61A (Tc) 15V 58mOhm @ 40A, 15V 2.7V @ 8mA 182 nC @ 15 V ±15V 4523 pF @ 1000 V - 438W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R45MT17K

G3R45MT17K

SIC MOSFET N-CH 61A TO247-4

GeneSiC Semiconductor
919 -

RFQ

G3R45MT17K

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 61A (Tc) 15V 58mOhm @ 40A, 15V 2.7V @ 8mA 182 nC @ 15 V ±15V 4523 pF @ 1000 V - 438W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R20MT12K

G3R20MT12K

SIC MOSFET N-CH 128A TO247-4

GeneSiC Semiconductor
689 -

RFQ

G3R20MT12K

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 128A (Tc) 15V 24mOhm @ 60A, 15V 2.69V @ 15mA 219 nC @ 15 V ±15V 5873 pF @ 800 V - 542W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R20MT12N

G3R20MT12N

SIC MOSFET N-CH 105A SOT227

GeneSiC Semiconductor
203 -

RFQ

G3R20MT12N

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 105A (Tc) 15V 24mOhm @ 60A, 15V 2.69V @ 15mA 219 nC @ 15 V +20V, -10V 5873 pF @ 800 V - 365W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
G3R20MT17K

G3R20MT17K

SIC MOSFET N-CH 124A TO247-4

GeneSiC Semiconductor
273 -

RFQ

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 124A (Tc) 15V 26mOhm @ 75A, 15V 2.7V @ 15mA 400 nC @ 15 V ±15V 10187 pF @ 1000 V - 809W (Tc) -55°C ~ 175°C (TJ) Through Hole
G2R120MT33J

G2R120MT33J

SIC MOSFET N-CH TO263-7

GeneSiC Semiconductor
217 -

RFQ

G2R120MT33J

Ficha técnica

Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 3300 V 35A 20V 156mOhm @ 20A, 20V - 145 nC @ 20 V +25V, -10V 3706 pF @ 1000 V - - -55°C ~ 175°C (TJ) Surface Mount
G3R450MT17D

G3R450MT17D

SIC MOSFET N-CH 9A TO247-3

GeneSiC Semiconductor
1,256 -

RFQ

G3R450MT17D

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 9A (Tc) 15V 585mOhm @ 4A, 15V 2.7V @ 2mA 18 nC @ 15 V ±15V 454 pF @ 1000 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
G3R60MT07K

G3R60MT07K

750V 60M TO-247-4 G3R SIC MOSFET

GeneSiC Semiconductor
135 -

RFQ

G3R60MT07K

Ficha técnica

Tube G3R™ Active - SiCFET (Silicon Carbide) 750 V - - - - - - - - - - Through Hole
G3R20MT17N

G3R20MT17N

SIC MOSFET N-CH 100A SOT227

GeneSiC Semiconductor
160 -

RFQ

G3R20MT17N

Ficha técnica

Tube G3R™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 100A (Tc) 15V 26mOhm @ 75A, 15V 2.7V @ 15mA 400 nC @ 15 V ±15V 10187 pF @ 1000 V - 523W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
GA10SICP12-263

GA10SICP12-263

TRANS SJT 1200V 25A D2PAK

GeneSiC Semiconductor
2,833 -

RFQ

GA10SICP12-263

Ficha técnica

Tube - Active - SiC (Silicon Carbide Junction Transistor) 1200 V 25A (Tc) - 100mOhm @ 10A - - - 1403 pF @ 800 V - 170W (Tc) 175°C (TJ) Surface Mount
GA50JT06-258

GA50JT06-258

TRANS SJT 600V 100A TO258

GeneSiC Semiconductor
2,358 -

RFQ

GA50JT06-258

Ficha técnica

Bulk - Active - SiC (Silicon Carbide Junction Transistor) 600 V 100A (Tc) - 25mOhm @ 50A - - - - - 769W (Tc) -55°C ~ 225°C (TJ) Through Hole
G3R12MT12K

G3R12MT12K

1200V 12M TO-247-4 G3R SIC MOSFE

GeneSiC Semiconductor
3,772 -

RFQ

G3R12MT12K

Ficha técnica

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 157A (Tc) 15V, 18V 13mOhm @ 100A, 18V 2.7V @ 50mA 288 nC @ 15 V +22V, -10V 9335 pF @ 800 V - 567W (Tc) -55°C ~ 175°C (TJ) Through Hole
GA20JT12-263

GA20JT12-263

TRANS SJT 1200V 45A D2PAK

GeneSiC Semiconductor
2,726 -

RFQ

GA20JT12-263

Ficha técnica

Tube - Active - SiC (Silicon Carbide Junction Transistor) 1200 V 45A (Tc) - 60mOhm @ 20A - - - 3091 pF @ 800 V - 282W (Tc) 175°C (TJ) Surface Mount
GA08JT17-247

GA08JT17-247

TRANS SJT 1700V 8A TO247AB

GeneSiC Semiconductor
2,525 -

RFQ

GA08JT17-247

Ficha técnica

Tube - Obsolete - SiC (Silicon Carbide Junction Transistor) 1700 V 8A (Tc) (90°C) - 250mOhm @ 8A - - - - - 48W (Tc) 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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