Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQP2N80

FQP2N80

MOSFET N-CH 800V 2.4A TO220-3

Fairchild Semiconductor
900 -

RFQ

FQP2N80

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 2.4A (Tc) 10V 6.3Ohm @ 1.2A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3377-ZK-E1-AY

2SK3377-ZK-E1-AY

SWITCHING N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

2SK3377-ZK-E1-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN2R7-30BL,118

PSMN2R7-30BL,118

NOW NEXPERIA PSMN2R7-30BL - 100A

NXP USA Inc.
2,400 -

RFQ

PSMN2R7-30BL,118

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 3mOhm @ 25A, 10V 2.15V @ 1mA 66 nC @ 10 V ±20V 3954 pF @ 15 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUZ30AH3045A

BUZ30AH3045A

BUZ30 - 12V-300V N-CHANNEL POWER

Infineon Technologies
1,927 -

RFQ

BUZ30AH3045A

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDSS2407_SB82086

FDSS2407_SB82086

FDSS2407 - N-CHANNEL DUAL MOSFET

Fairchild Semiconductor
1,669 -

RFQ

FDSS2407_SB82086

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80R1K2P7

IPP80R1K2P7

IPP80R1K2 - 800V COOLMOS N-CHANN

Infineon Technologies
980 -

RFQ

IPP80R1K2P7

Ficha técnica

Bulk - Active - - - - - - - - - - - - - -
IPB03N03LB G

IPB03N03LB G

MOSFET N-CH 30V 80A D2PAK

Infineon Technologies
924 -

RFQ

IPB03N03LB G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.8mOhm @ 55A, 10V 2V @ 100µA 59 nC @ 5 V ±20V 7624 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF6N60ZUT

FDPF6N60ZUT

MOSFET N-CH 600V 4.5A TO220F

Fairchild Semiconductor
450 -

RFQ

FDPF6N60ZUT

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2Ohm @ 2.25A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 865 pF @ 25 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFZ34N

AUIRFZ34N

AUIRFZ34 - 55V-60V N-CHANNEL AUT

Infineon Technologies
6,000 -

RFQ

AUIRFZ34N

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E3R1-40E,127

BUK7E3R1-40E,127

NEXPERIA BUK7E3R1-40E - 100A, 40

NXP Semiconductors
1,263 -

RFQ

BUK7E3R1-40E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 79 nC @ 10 V ±20V 6200 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
G60N10T

G60N10T

N100V,RD(MAX)<25M@10V,RD(MAX)<30

Goford Semiconductor
215 -

RFQ

G60N10T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 25mOhm @ 20A, 10V 2.5V @ 250µA 146 nC @ 10 V ±20V 3970 pF @ 50 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSO040N03MSGXUMA1

BSO040N03MSGXUMA1

MOSFET N-CH 30V 16A 8DSO

Infineon Technologies
844 -

RFQ

BSO040N03MSGXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 4mOhm @ 20A, 10V 2V @ 250µA 73 nC @ 10 V ±20V 5700 pF @ 15 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SJ634-TL-E

2SJ634-TL-E

2SJ634 - PCH 4V DRIVE SERIES

onsemi
7,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDPF18N20FT-G

FDPF18N20FT-G

MOSFET N-CH 200V 18A TO220F

Fairchild Semiconductor
1,246 -

RFQ

FDPF18N20FT-G

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSL606SNH6327XTSA1

BSL606SNH6327XTSA1

MOSFET N-CH 60V 4.5A TSOP-6

Infineon Technologies
6,323 -

RFQ

BSL606SNH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 4.5A (Ta) 4.5V, 10V 60mOhm @ 4.5A, 10V 2.3V @ 15µA 5.6 nC @ 5 V ±20V 657 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK9608-55A,118

BUK9608-55A,118

NEXPERIA BUK9608-55A - 125A, 55V

NXP Semiconductors
2,400 -

RFQ

BUK9608-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 25A, 10V 2V @ 1mA 92 nC @ 5 V ±15V 6021 pF @ 25 V - 253W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF5N50NZU

FDPF5N50NZU

MOSFET N-CH 500V 3.9A TO220F

Fairchild Semiconductor
1,656 -

RFQ

FDPF5N50NZU

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 500 V 3.9A (Tc) 10V 2Ohm @ 1.95A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR2407TRPBF

IRFR2407TRPBF

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
646 -

RFQ

IRFR2407TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 26mOhm @ 25A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GC11N65T

GC11N65T

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Goford Semiconductor
2,557 -

RFQ

GC11N65T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 21 nC @ 10 V ±30V 901 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISC0804NLSATMA1

ISC0804NLSATMA1

MOSFET N-CH 100V 12A/59A TDSON-8

Infineon Technologies
2,882 -

RFQ

ISC0804NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 59A (Tc) 4.5V, 10V 10.9mOhm @ 20A, 10V 2.3V @ 28µA 24 nC @ 10 V ±20V 1600 pF @ 50 V - 2.5W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 42446 Record«Prev1... 188189190191192193194195...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario