Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ44ESTRLPBF

IRFZ44ESTRLPBF

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies
160 -

RFQ

IRFZ44ESTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HS54095TZ-E

HS54095TZ-E

HS54095TZ-E - N-CHANNEL POWER MO

Renesas
7,500 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 200mA (Ta) 10V 16.5Ohm @ 100mA, 10V 5V @ 1mA 4.8 nC @ 10 V ±30V 66 pF @ 25 V - 750mW (Ta) 150°C Through Hole
FCPF4300N80Z

FCPF4300N80Z

MOSFET N-CH 800V 1.6A TO220F

Fairchild Semiconductor
931 -

RFQ

FCPF4300N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Tc) 10V 4.3Ohm @ 800mA, 10V 4.5V @ 160µA 8.8 nC @ 10 V ±20V 355 pF @ 100 V - 19.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB5N50CTM

FQB5N50CTM

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
5,870 -

RFQ

FQB5N50CTM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR4292

AUIRFR4292

MOSFET N-CH 250V 9.3A DPAK

International Rectifier
4,435 -

RFQ

AUIRFR4292

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V 5V @ 50µA 20 nC @ 10 V ±20V 705 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48NSTRLPBF

IRFZ48NSTRLPBF

MOSFET N-CH 55V 64A D2PAK

Infineon Technologies
622 -

RFQ

IRFZ48NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GT100N12T

GT100N12T

N120V,RD(MAX)<10M@10V,VTH2.5V~3.

Goford Semiconductor
3,432 -

RFQ

GT100N12T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 10mOhm @ 35A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 3050 pF @ 60 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
GT52N10T

GT52N10T

N100V,RD(MAX)<9M@10V,RD(MAX)<15M

Goford Semiconductor
3,988 -

RFQ

GT52N10T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 80A - 9mOhm @ 50A, 10V 2.5V @ 250µA 44.5 nC @ 10 V ±20V 2626 pF @ 50 V - 227W -55°C ~ 150°C (TJ) Through Hole
IRFZ44NSTRLPBF

IRFZ44NSTRLPBF

MOSFET N-CH 55V 49A D2PAK

Infineon Technologies
3,523 -

RFQ

IRFZ44NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK2624LS-CD11

2SK2624LS-CD11

2SK2624LS - N-CHANNEL SILICON MO

Sanyo
500 -

RFQ

2SK2624LS-CD11

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD60R280PFD7SAUMA1

IPD60R280PFD7SAUMA1

MOSFET N-CH 650V 12A TO252-3

Infineon Technologies
269 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 15.3 nC @ 10 V ±20V 656 pF @ 400 V - 51W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF640NSTRLPBF

IRF640NSTRLPBF

MOSFET N-CH 200V 18A D2PAK

Infineon Technologies
26,243 -

RFQ

IRF640NSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6620TRPBF

IRF6620TRPBF

MOSFET N-CH 20V 27A DIRECTFET

Infineon Technologies
812 -

RFQ

IRF6620TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 20 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.7mOhm @ 27A, 10V 2.45V @ 250µA 42 nC @ 4.5 V ±20V 4130 pF @ 10 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSO201SPHXUMA1

BSO201SPHXUMA1

MOSFET P-CH 20V 12A 8DSO

Infineon Technologies
114 -

RFQ

BSO201SPHXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 2.5V, 4.5V 8mOhm @ 14.9A, 4.5V 1.2V @ 250µA 88 nC @ 4.5 V ±12V 9600 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN015-100B,118

PSMN015-100B,118

NEXPERIA PSMN015-100B - 75A, 100

NXP Semiconductors
4,005 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Ta) 10V 15mOhm @ 25A, 10V 4V @ 1mA 90 nC @ 10 V ±20V 4900 pF @ 25 V - 300W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF9540NSTRRPBF

IRF9540NSTRRPBF

MOSFET P-CH 100V 23A D2PAK

Infineon Technologies
3,111 -

RFQ

IRF9540NSTRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1450 pF @ 25 V - 3.1W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD50N06S2L13ATMA2

IPD50N06S2L13ATMA2

MOSFET N-CH 55V 50A TO252-31

Infineon Technologies
499 -

RFQ

IPD50N06S2L13ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 4.5V, 10V 12.7mOhm @ 34A, 10V 2V @ 80µA 69 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR8314TRPBF

IRFR8314TRPBF

MOSFET N-CH 30V 90A DPAK

Infineon Technologies
827 -

RFQ

IRFR8314TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 2.2mOhm @ 90A, 10V 2.2V @ 100µA 54 nC @ 4.5 V ±20V 4945 pF @ 15 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3377-Z-AZ

2SK3377-Z-AZ

2SK3377-Z-AZ - SWITCHING N-CHANN

Renesas
8,099 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 4V, 10V 44mOhm @ 10A, 10V 2.5V @ 1mA 17 nC @ 10 V ±20V 760 pF @ 10 V - 1W (Ta), 30W (Tc) 150°C Surface Mount
FDMS3616S

FDMS3616S

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
6,000 -

RFQ

FDMS3616S

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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