Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HAT1044M-EL-E

HAT1044M-EL-E

HAT1044M-EL-E - SILICON P CHANNE

Renesas
2,408 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.5A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V 2.5V @ 1mA 13 nC @ 10 V ±20V 600 pF @ 10 V - 1.05W (Ta) 150°C Surface Mount
IRLR130ATF

IRLR130ATF

13A, 100V, 0.12OHM, N-CHANNEL MO

Fairchild Semiconductor
2,000 -

RFQ

IRLR130ATF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SSP45N20A

SSP45N20A

35A, 200V, 0.065OHM, N-CHANNEL M

Fairchild Semiconductor
1,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 65mOhm @ 17.5A, 10V 4V @ 250µA 152 nC @ 10 V ±30V 3940 pF @ 25 V - 175W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7809AVTRPBF

IRF7809AVTRPBF

MOSFET N-CH 30V 13.3A 8SO

Infineon Technologies
413 -

RFQ

IRF7809AVTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V 9mOhm @ 15A, 4.5V 1V @ 250µA 62 nC @ 5 V ±12V 3780 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP19N20C

FQP19N20C

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,000 -

RFQ

FQP19N20C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19A (Tc) 10V 170mOhm @ 9.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1080 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK9K5R1-30EX

BUK9K5R1-30EX

NEXPERIA BUK9K5R1 - DUAL N-CHANN

Nexperia USA Inc.
3,853 -

RFQ

BUK9K5R1-30EX

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN8R5-100ESFQ

PSMN8R5-100ESFQ

NEXPERIA PSMN8R5 - NEXTPOWER 100

NXP Semiconductors
1,000 -

RFQ

PSMN8R5-100ESFQ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 97A (Ta) 7V, 10V 8.8mOhm @ 25A, 10V 4V @ 1mA 44.5 nC @ 10 V ±20V 3181 pF @ 50 V - 183W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFW550ATM

IRFW550ATM

40A, 100V, 0.04OHM, N-CHANNEL MO

Fairchild Semiconductor
847 -

RFQ

IRFW550ATM

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDPF7N60NZT

FDPF7N60NZT

MOSFET N-CH 600V 6.5A TO220F

Fairchild Semiconductor
5,295 -

RFQ

FDPF7N60NZT

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 6.5A (Tc) 10V 1.25Ohm @ 3.25A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 730 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPD07N60S5AATMA1

SPD07N60S5AATMA1

SPD07N60S5 - COOL MOS POWER MOSF

Infineon Technologies
3,305 -

RFQ

SPD07N60S5AATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7E4R6-60E,127

BUK7E4R6-60E,127

NEXPERIA BUK7E4 - TRANSISTOR >30

NXP Semiconductors
2,920 -

RFQ

BUK7E4R6-60E,127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 4.6mOhm @ 25A, 10V 4V @ 1mA 82 nC @ 10 V ±20V 6230 pF @ 25 V - 234W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3278-E

2SK3278-E

2SK3278 - N-CHANNEL SILICON MOSF

Sanyo
1,998 -

RFQ

2SK3278-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPU02N60S5XK

SPU02N60S5XK

SPU02N60 - 600V COOLMOS N-CHANNE

Infineon Technologies
1,493 -

RFQ

SPU02N60S5XK

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD180N10N3GATMA1

IPD180N10N3GATMA1

MOSFET N-CH 100V 43A TO252-3

Infineon Technologies
620 -

RFQ

IPD180N10N3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 6V, 10V 18mOhm @ 33A, 10V 3.5V @ 33µA 25 nC @ 10 V ±20V 1800 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF60B217

IRF60B217

TRENCH 40<-<100V

International Rectifier
4,342 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6V, 10V 9mOhm @ 36A, 10V 3.7V @ 50µA 66 nC @ 10 V ±20V 2230 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK6607-75C,118

BUK6607-75C,118

MOSFET N-CH 75V 100A D2PAK

NXP USA Inc.
804 -

RFQ

BUK6607-75C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7mOhm @ 25A, 10V 2.8V @ 1mA 123 nC @ 10 V ±16V 7600 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ46ZSPBF

IRFZ46ZSPBF

IRFZ46 - 12V-300V N-CHANNEL POWE

International Rectifier
800 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5305TRLPBF

IRFR5305TRLPBF

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
233 -

RFQ

IRFR5305TRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4N60T4

NTD4N60T4

TRANS MOSFET N-CH 600V 4A 3-PIN(

onsemi
7,138 -

RFQ

NTD4N60T4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRLU4343

IRLU4343

MOSFET N-CH 55V 26A I-PAK

Infineon Technologies
2,884 -

RFQ

IRLU4343

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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