Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3705Z

IRL3705Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
3,294 -

RFQ

IRL3705Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3705ZL

IRL3705ZL

MOSFET N-CH 55V 75A TO262

Infineon Technologies
2,165 -

RFQ

IRL3705ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V ±16V 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLIB9343

IRLIB9343

MOSFET P-CH 55V 14A TO220AB FP

Infineon Technologies
2,945 -

RFQ

IRLIB9343

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 33W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRLR4343

IRLR4343

MOSFET N-CH 55V 26A DPAK

Infineon Technologies
2,230 -

RFQ

IRLR4343

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRLU2905Z

IRLU2905Z

MOSFET N-CH 55V 42A I-PAK

Infineon Technologies
2,315 -

RFQ

IRLU2905Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH8311TRPBF

IRFH8311TRPBF

MOSFET N CH 30V 32A PQFN5X6

Infineon Technologies
213 -

RFQ

IRFH8311TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 169A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V 2.35V @ 100µA 66 nC @ 10 V ±20V 4960 pF @ 10 V - 3.6W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7608-40B,118

BUK7608-40B,118

NEXPERIA BUK7608 - N-CHANNEL MOS

Nexperia USA Inc.
9,196 -

RFQ

BUK7608-40B,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 8mOhm @ 25A, 10V 4V @ 1mA 36 nC @ 10 V ±20V 2689 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS4C054NT1G

NTMFS4C054NT1G

NTMFS4C054 - SINGLE N-CHANNEL PO

onsemi
7,594 -

RFQ

NTMFS4C054NT1G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 22.5A (Ta), 80A (Tc) 4.5V, 10V 2.54mOhm @ 30A, 10V 2.2V @ 250µA 32.5 nC @ 10 V ±20V 2300 pF @ 15 V - 2.59W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7934TRPBF

IRFH7934TRPBF

MOSFET N-CH 30V 24A/76A 8PQFN

International Rectifier
5,719 -

RFQ

IRFH7934TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 76A (Tc) 4.5V, 10V 3.5mOhm @ 24A, 10V 2.35V @ 50µA 30 nC @ 4.5 V ±20V 3100 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
94-2354PBF

94-2354PBF

PLANAR MOSFET 40<-<100V

International Rectifier
5,500 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) - 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V - 3247 pF @ 25 V - - - Through Hole
SPS04N60C3E8177AKMA1

SPS04N60C3E8177AKMA1

LOW POWER_LEGACY

Infineon Technologies
4,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FW238-NMM-TL-E

FW238-NMM-TL-E

FW238 - N-CHANNEL SILICON MOS FE

Sanyo
3,000 -

RFQ

FW238-NMM-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPD040N03LGATMA1

IPD040N03LGATMA1

MOSFET N-CH 30V 90A TO252-3

Infineon Technologies
985 -

RFQ

IPD040N03LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R600CPXKSA1

IPA60R600CPXKSA1

IPA60R600 - 600V COOLMOS N-CHANN

Infineon Technologies
8,500 -

RFQ

IPA60R600CPXKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 6.1A (Tc) 10V 600mOhm @ 3.3A, 10V 3.5V @ 220µA 27 nC @ 10 V ±20V 550 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFU8401

AUIRFU8401

MOSFET N-CH 40V 100A I-PAK

International Rectifier
8,142 -

RFQ

AUIRFU8401

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 500µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD8874

FDD8874

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
5,256 -

RFQ

FDD8874

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD8453LZ-F085

FDD8453LZ-F085

MOSFET N-CH 40V 50A DPAK

Fairchild Semiconductor
1,840 -

RFQ

FDD8453LZ-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 6.7mOhm @ 15A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 3515 pF @ 20 V - 118W (Tc) -55°C ~ 175°C (TJ) Surface Mount
GT105N10T

GT105N10T

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Goford Semiconductor
250 -

RFQ

GT105N10T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V - - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR420T

IRFR420T

2.5A, 500V, 3OHM, N-CHANNEL MOSF

Fairchild Semiconductor
7,500 -

RFQ

IRFR420T

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFR825TRPBF

IRFR825TRPBF

MOSFET N-CH 500V 6A DPAK

Infineon Technologies
671 -

RFQ

IRFR825TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.3Ohm @ 3.7A, 10V 5V @ 250µA 34 nC @ 10 V ±20V 1346 pF @ 25 V - 119W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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