Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3717

IRF3717

MOSFET N-CH 20V 20A 8SO

Infineon Technologies
2,256 -

RFQ

IRF3717

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Ta) 4.5V, 10V 4.4mOhm @ 20A, 10V 2.45V @ 250µA 33 nC @ 4.5 V ±20V 2890 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTTS2P02R2

NTTS2P02R2

MOSFET P-CH 20V 2.4A MICRO8

onsemi
4,000 -

RFQ

NTTS2P02R2

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) 2.5V, 4.5V 90mOhm @ 2.4A, 4.5V 1.4V @ 250µA 18 nC @ 4.5 V ±8V 550 pF @ 16 V - 780mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTMS3P03R2

NTMS3P03R2

MOSFET P-CH 30V 2.34A 8SOIC

onsemi
47,009 -

RFQ

NTMS3P03R2

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.34A (Ta) 4.5V, 10V 85mOhm @ 3.05A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 750 pF @ 24 V - 730mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTTS2P03R2

NTTS2P03R2

MOSFET P-CH 30V 2.1A MICRO8

onsemi
169,353 -

RFQ

NTTS2P03R2

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.1A (Ta) 4.5V, 10V 85mOhm @ 2.48A, 10V 3V @ 250µA 22 nC @ 4.5 V ±20V 500 pF @ 24 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTMSD3P102R2

NTMSD3P102R2

MOSFET P-CH 20V 2.34A 8SOIC

onsemi
2,466 -

RFQ

NTMSD3P102R2

Ficha técnica

Tape & Reel (TR),Bulk FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.34A (Ta) 4.5V, 10V 85mOhm @ 3.05A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 750 pF @ 16 V Schottky Diode (Isolated) 730mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTHS5445T1

NTHS5445T1

MOSFET P-CH 8V 5.2A CHIPFET

onsemi
12,000 -

RFQ

NTHS5445T1

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 8 V 5.2A (Ta) 1.8V, 4.5V 35mOhm @ 5.2A, 4.5V 450mV @ 250µA (Min) 26 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTGS3455T1

NTGS3455T1

MOSFET P-CH 30V 2.5A 6TSOP

onsemi
2,943 -

RFQ

NTGS3455T1

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Ta) 4.5V, 10V 100mOhm @ 3.5A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 480 pF @ 5 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTGS3443T1

NTGS3443T1

MOSFET P-CH 20V 2.2A 6TSOP

onsemi
3,946 -

RFQ

NTGS3443T1

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±12V 565 pF @ 5 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTA4001NT1

NTA4001NT1

MOSFET N-CH 20V 238MA SC75

onsemi
85,965 -

RFQ

NTA4001NT1

Ficha técnica

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 238mA (Tj) 2.5V, 4.5V 3Ohm @ 10mA, 4.5V 1.5V @ 100µA - ±10V 20 pF @ 5 V - 300mW (Tj) -55°C ~ 150°C (TJ) Surface Mount
IRFR120Z

IRFR120Z

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
2,901 -

RFQ

IRFR120Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU120Z

IRFU120Z

MOSFET N-CH 100V 8.7A IPAK

Infineon Technologies
2,665 -

RFQ

IRFU120Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFL024Z

IRFL024Z

MOSFET N-CH 55V 5.1A SOT223

Infineon Technologies
2,625 -

RFQ

IRFL024Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 5.1A (Ta) 10V 57.5mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 340 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF3711Z

IRF3711Z

MOSFET N-CH 20V 92A TO220AB

Infineon Technologies
3,131 -

RFQ

IRF3711Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU2905Z

IRFU2905Z

MOSFET N-CH 55V 42A IPAK

Infineon Technologies
3,778 -

RFQ

IRFU2905Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 14.5mOhm @ 36A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1380 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3504Z

IRFU3504Z

MOSFET N-CH 40V 42A IPAK

Infineon Technologies
3,499 -

RFQ

IRFU3504Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 50µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44Z

IRFZ44Z

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
2,159 -

RFQ

IRFZ44Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711ZL

IRF3711ZL

MOSFET N-CH 20V 92A TO262

Infineon Technologies
2,298 -

RFQ

IRF3711ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46Z

IRFZ46Z

MOSFET N-CH 55V 51A TO220AB

Infineon Technologies
3,014 -

RFQ

IRFZ46Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707ZCL

IRF3707ZCL

MOSFET N-CH 30V 59A TO262

Infineon Technologies
2,177 -

RFQ

IRF3707ZCL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 250µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707Z

IRF3707Z

MOSFET N-CH 30V 59A TO220AB

Infineon Technologies
3,841 -

RFQ

IRF3707Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 250µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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