Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PHP23NQ11T,127

PHP23NQ11T,127

NEXPERIA PHP23NQ11T 23A, 110V, 0

NXP Semiconductors
7,180 -

RFQ

PHP23NQ11T,127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 110 V 23A (Tc) 10V 70mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 830 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7660-100A,118

BUK7660-100A,118

NEXPERIA BUK7660 - N-CHANNEL TRE

NXP Semiconductors
4,800 -

RFQ

BUK7660-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tc) 10V 60mOhm @ 15A, 10V 4V @ 1mA - ±20V 1377 pF @ 25 V - 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA1808GR-9JG-E1-A

UPA1808GR-9JG-E1-A

UPA1808 - N CHANNEL MOSFET

Renesas
3,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta) 4V, 10V 17mOhm @ 5A, 10V 2.5V @ 1mA 13 nC @ 10 V ±20V 660 pF @ 10 V - 2W (Ta) 150°C Surface Mount
IRFR7546TRPBF

IRFR7546TRPBF

MOSFET N-CH 60V 56A DPAK

Infineon Technologies
258 -

RFQ

IRFR7546TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 6V, 10V 7.9mOhm @ 43A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3020 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7631-100E,118

BUK7631-100E,118

MOSFET N-CH 100V 34A D2PAK

NXP USA Inc.
1,451 -

RFQ

BUK7631-100E,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 10V 31mOhm @ 10A, 10V 4V @ 1mA 29.4 nC @ 10 V ±20V 1738 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCU4300N80Z

FCU4300N80Z

MOSFET N-CH 800V 1.6A I-PAK

Fairchild Semiconductor
1,000 -

RFQ

FCU4300N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Tc) 10V 4.3Ohm @ 800mA, 10V 4.5V @ 160µA 8.8 nC @ 10 V ±20V 355 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP5N60NZ

FDP5N60NZ

MOSFET N-CH 600V 4.5A TO220-3

Fairchild Semiconductor
858 -

RFQ

FDP5N60NZ

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2Ohm @ 2.25A, 10V 5V @ 250µA 13 nC @ 10 V ±25V 600 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB04N03LAT

IPB04N03LAT

MOSFET N-CH 25V 80A TO263-3

Infineon Technologies
550 -

RFQ

IPB04N03LAT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 3.9mOhm @ 55A, 10V 2V @ 60µA 32 nC @ 5 V ±20V 3877 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF9N25C

FQPF9N25C

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
9,565 -

RFQ

FQPF9N25C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCU3400N80Z

FCU3400N80Z

MOSFET N-CH 800V 2A I-PAK

Fairchild Semiconductor
1,691 -

RFQ

FCU3400N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7805ZTRPBF

IRF7805ZTRPBF

MOSFET N-CH 30V 16A 8SO

Infineon Technologies
388 -

RFQ

IRF7805ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.8mOhm @ 16A, 10V 2.25V @ 250µA 27 nC @ 4.5 V ±20V 2080 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7821TRPBF

IRF7821TRPBF

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies
2,425 -

RFQ

IRF7821TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
BUK7620-100A,118

BUK7620-100A,118

NEXPERIA BUK7620 - TRANSISTOR >3

NXP Semiconductors
3,180 -

RFQ

BUK7620-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 63A (Tc) 10V 20mOhm @ 25A, 10V 4V @ 1mA - ±20V 4373 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU7746PBF

IRFU7746PBF

TRENCH 40<-<100V

International Rectifier
3,000 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 6V, 10V 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF9N25CYDTU

FQPF9N25CYDTU

MOSFET N-CH 250V 8.8A TO220F-3

Fairchild Semiconductor
1,795 -

RFQ

FQPF9N25CYDTU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3709PBF

IRF3709PBF

IRF3709 - 12V-300V N-CHANNEL POW

International Rectifier
913 -

RFQ

IRF3709PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF19N10

FQPF19N10

MOSFET N-CH 100V 13.6A TO220F

Fairchild Semiconductor
582 -

RFQ

FQPF19N10

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 13.6A (Tc) 10V 100mOhm @ 6.8A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 780 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUZ31 H3045A

BUZ31 H3045A

MOSFET N-CH 200V 14.5A D2PAK

Infineon Technologies
3,380 -

RFQ

BUZ31 H3045A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.5A (Tc) 10V 200mOhm @ 9A, 10V 4V @ 1mA - ±20V 1120 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP6030BL

FDP6030BL

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
7,865 -

RFQ

FDP6030BL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 18mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 5 V ±20V 1160 pF @ 15 V - 60W (Tc) -65°C ~ 175°C (TJ) Through Hole
BUK7628-100A,118

BUK7628-100A,118

MOSFET N-CH 100V 47A D2PAK

NXP USA Inc.
7,200 -

RFQ

BUK7628-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 10V 28mOhm @ 25A, 10V 4V @ 1mA - ±20V 3100 pF @ 25 V - 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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