Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SJ361RYTR-E

2SJ361RYTR-E

POWER FIELD-EFFECT TRANSISTOR, 2

Renesas Electronics America Inc
7,000 -

RFQ

2SJ361RYTR-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFH5104TR2PBF

IRFH5104TR2PBF

MOSFET N-CH 40V 24A/100A PQFN

Infineon Technologies
354 -

RFQ

IRFH5104TR2PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 100A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 100µA 80 nC @ 10 V ±20V 3120 pF @ 25 V - 3.6W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPN80R1K4P7ATMA1

IPN80R1K4P7ATMA1

MOSFET N-CH 800V 4A SOT223

Infineon Technologies
377 -

RFQ

IPN80R1K4P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 70µA 10 nC @ 10 V ±20V 250 pF @ 500 V - 7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SJ403

2SJ403

2SJ403 - J-II (EXISTING TYPE), 2

Sanyo
1,552 -

RFQ

2SJ403

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQPF20N06

FQPF20N06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
1,124 -

RFQ

FQPF20N06

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 10V 60mOhm @ 7.5A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK3815-DL-E

2SK3815-DL-E

2SK3815 - N-CHANNEL, MOSFET

Sanyo
1,000 -

RFQ

2SK3815-DL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQU2N90TU-AM002

FQU2N90TU-AM002

MOSFET N-CH 900V 1.7A I-PAK

Fairchild Semiconductor
977 -

RFQ

FQU2N90TU-AM002

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTB15N06VT4

MTB15N06VT4

TRANS MOSFET N-CH 60V 15A 3-PIN(

Motorola
800 -

RFQ

MTB15N06VT4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTB85N03T4

NTB85N03T4

MOSFET N-CH 28V 85A D2PAK

onsemi
3,778 -

RFQ

NTB85N03T4

Ficha técnica

Cut Tape (CT) * Obsolete - - - - - - - - - - - - - -
VN2222LL

VN2222LL

MOSFET N-CH 60V 150MA TO92-3

onsemi
3,608 -

RFQ

VN2222LL

Ficha técnica

Bulk,Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 150mA (Ta) 10V 7.5Ohm @ 500mA, 10V 2.5V @ 1mA - ±20V 60 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) Through Hole
MTP2P50E

MTP2P50E

MOSFET P-CH 500V 2A TO220AB

onsemi
2,707 -

RFQ

MTP2P50E

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 500 V 2A (Tc) 10V 6Ohm @ 1A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 1183 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTP23P06V

MTP23P06V

MOSFET P-CH 60V 23A TO220AB

onsemi
2,708 -

RFQ

MTP23P06V

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 10V 120mOhm @ 11.5A, 10V 4V @ 250µA 50 nC @ 10 V ±15V 1620 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTD6P10E

MTD6P10E

MOSFET P-CH 100V 6A DPAK

onsemi
3,421 -

RFQ

MTD6P10E

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 660mOhm @ 3A, 10V 4V @ 250µA 22 nC @ 10 V ±15V 840 pF @ 25 V - 1.75W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MTP2955V

MTP2955V

MOSFET P-CH 60V 12A TO220AB

onsemi
2,979 -

RFQ

MTP2955V

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 230mOhm @ 6A, 10V 4V @ 250µA 30 nC @ 10 V ±15V 770 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTP36N06V

MTP36N06V

MOSFET N-CH 60V 32A TO220AB

onsemi
2,631 -

RFQ

MTP36N06V

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 1700 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTP50P03HDL

MTP50P03HDL

MOSFET P-CH 30V 50A TO220AB

onsemi
2,221 -

RFQ

MTP50P03HDL

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 5V 25mOhm @ 25A, 5V 2V @ 250µA 100 nC @ 5 V ±15V 4900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTP6P20E

MTP6P20E

MOSFET P-CH 200V 6A TO220AB

onsemi
3,209 -

RFQ

MTP6P20E

Ficha técnica

Tube,Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 750 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTW32N20E

MTW32N20E

MOSFET N-CH 200V 32A TO247

onsemi
3,383 -

RFQ

MTW32N20E

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 75mOhm @ 16A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN0300L

VN0300L

MOSFET N-CH 60V 200MA TO92-3

onsemi
3,289 -

RFQ

VN0300L

Ficha técnica

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 5V, 10V 1.2Ohm @ 1A, 10V 2.5V @ 1mA - ±20V 100 pF @ 15 V - 350mW (Tc) - Through Hole
BS170RLRA

BS170RLRA

MOSFET N-CH 60V 500MA TO92-3

onsemi
2,296 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 60 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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