Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUP60N06-12P-E3

SUP60N06-12P-E3

MOSFET N-CH 60V 60A TO220AB

Vishay Siliconix
2,700 -

RFQ

SUP60N06-12P-E3

Ficha técnica

Bulk TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 12mOhm @ 30A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 1970 pF @ 30 V - 3.25W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP60N06-12P-GE3

SUP60N06-12P-GE3

MOSFET N-CH 60V 60A TO220AB

Vishay Siliconix
3,396 -

RFQ

SUP60N06-12P-GE3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 12mOhm @ 30A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 1970 pF @ 30 V - 3.25W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP60N10-16L-E3

SUP60N10-16L-E3

MOSFET N-CH 100V 60A TO220AB

Vishay Siliconix
2,879 -

RFQ

SUP60N10-16L-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 16mOhm @ 30A, 10V 3V @ 250µA 110 nC @ 10 V ±20V 3820 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP60N10-18P-E3

SUP60N10-18P-E3

MOSFET N-CH 100V 60A TO220AB

Vishay Siliconix
2,208 -

RFQ

SUP60N10-18P-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 8V, 10V 18.3mOhm @ 15A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 2600 pF @ 50 V - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP65P04-15-E3

SUP65P04-15-E3

MOSFET P-CH 40V 65A TO220AB

Vishay Siliconix
2,404 -

RFQ

SUP65P04-15-E3

Ficha técnica

Bulk TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 40 V 65A (Tc) 4.5V, 10V 15mOhm @ 30A, 10V 3V @ 250µA 130 nC @ 10 V ±20V 5400 pF @ 25 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP75P03-07-E3

SUP75P03-07-E3

MOSFET P-CH 30V 75A TO220AB

Vishay Siliconix
3,396 -

RFQ

SUP75P03-07-E3

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 3V @ 250µA 240 nC @ 10 V ±20V 9000 pF @ 25 V - 3.75W (Ta), 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP85N02-03-E3

SUP85N02-03-E3

MOSFET N-CH 20V 85A TO220AB

Vishay Siliconix
3,768 -

RFQ

SUP85N02-03-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 2.5V, 4.5V 3mOhm @ 30A, 4.5V 450mV @ 2mA (Min) 200 nC @ 4.5 V ±8V 21250 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP85N03-04P-E3

SUP85N03-04P-E3

MOSFET N-CH 30V 85A TO220AB

Vishay Siliconix
2,650 -

RFQ

SUP85N03-04P-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 85A (Tc) 4.5V, 10V 4.3mOhm @ 30A, 10V 3V @ 250µA 90 nC @ 10 V ±20V 4500 pF @ 25 V - 3.75W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP85N04-03-E3

SUP85N04-03-E3

MOSFET N-CH 40V 85A TO220AB

Vishay Siliconix
3,947 -

RFQ

SUP85N04-03-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 4.5V, 10V 3.5mOhm @ 30A, 10V 3V @ 250µA 250 nC @ 10 V ±20V 6860 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP85N10-10P-GE3

SUP85N10-10P-GE3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix
3,786 -

RFQ

SUP85N10-10P-GE3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 10V 10mOhm @ 20A, 10V 4.5V @ 250µA 120 nC @ 10 V ±20V 4660 pF @ 50 V - 3.75W (Ta), 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90N03-03-E3

SUP90N03-03-E3

MOSFET N-CH 30V 90A TO220AB

Vishay Siliconix
3,088 -

RFQ

SUP90N03-03-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 2.9mOhm @ 28.8A, 10V 2.5V @ 250µA 257 nC @ 10 V ±20V 12065 pF @ 15 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP90N08-6M8P-E3

SUP90N08-6M8P-E3

MOSFET N-CH 75V 90A TO220AB

Vishay Siliconix
2,083 -

RFQ

SUP90N08-6M8P-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 6.8mOhm @ 20A, 10V 4.5V @ 250µA 115 nC @ 10 V ±20V 4620 pF @ 30 V - 3.75W (Ta), 272W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP90N08-7M7P-E3

SUP90N08-7M7P-E3

MOSFET N-CH 75V 90A TO220AB

Vishay Siliconix
3,151 -

RFQ

SUP90N08-7M7P-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 7.7mOhm @ 20A, 10V 4.5V @ 250µA 105 nC @ 10 V ±20V 4250 pF @ 30 V - 3.75W (Ta), 208.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90N15-18P-E3

SUP90N15-18P-E3

MOSFET N-CH 150V 90A TO220AB

Vishay Siliconix
3,506 -

RFQ

SUP90N15-18P-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 18mOhm @ 20A, 10V 4.5V @ 250µA 100 nC @ 10 V ±20V 4180 pF @ 75 V - 3.75W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUV85N10-10-E3

SUV85N10-10-E3

MOSFET N-CH 100V 85A TO220AB

Vishay Siliconix
2,076 -

RFQ

SUV85N10-10-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 6550 pF @ 25 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
TP0202K-T1-GE3

TP0202K-T1-GE3

MOSFET P-CH 30V 385MA SOT23-3

Vishay Siliconix
3,863 -

RFQ

TP0202K-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 385mA (Ta) 4.5V, 10V 1.4Ohm @ 500mA, 10V 3V @ 250µA 1 nC @ 10 V ±20V 31 pF @ 15 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4178DY-T1-E3

SI4178DY-T1-E3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix
3,086 -

RFQ

SI4178DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 21mOhm @ 8.4A, 10V 2.8V @ 250µA 12 nC @ 10 V ±25V 405 pF @ 15 V - 2.4W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ7415CENW-T1_GE3

SQ7415CENW-T1_GE3

AUTOMOTIVE P-CHANNEL 60-V (D-S)

Vishay Siliconix
2,192 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 16A (Tc) 4.5V, 10V 65mOhm @ 5.7A, 10V 2.5V @ 250µA 38 nC @ 10 V ±20V 1385 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD09P10-195-GE3

SUD09P10-195-GE3

MOSFET P-CH 100V 8.8A TO252

Vishay Siliconix
3,468 -

RFQ

SUD09P10-195-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 8.8A (Tc) 4.5V, 10V 195mOhm @ 3.6A, 10V 2.5V @ 250µA 34.8 nC @ 10 V ±20V 1055 pF @ 50 V - 2.5W (Ta), 32.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ420EP-T1_BE3

SQJ420EP-T1_BE3

N-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
2,612 -

RFQ

SQJ420EP-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 10mOhm @ 9.7A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1860 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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