Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUM40N02-12P-E3

SUM40N02-12P-E3

MOSFET N-CH 20V 40A TO263

Vishay Siliconix
2,885 -

RFQ

SUM40N02-12P-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 40A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V 3V @ 250µA 12 nC @ 4.5 V ±20V 1000 pF @ 10 V - 3.75W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM70N03-09CP-E3

SUM70N03-09CP-E3

MOSFET N-CH 30V 70A TO263

Vishay Siliconix
3,026 -

RFQ

SUM70N03-09CP-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 9.5mOhm @ 20A, 10V 3V @ 250µA 45 nC @ 10 V ±20V 2200 pF @ 25 V - 3.75W (Ta), 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS890ADN-T1-GE3

SIS890ADN-T1-GE3

MOSFET N-CH 100V 7.6A/24.7A PPAK

Vishay Siliconix
3,180 -

RFQ

SIS890ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.6A (Ta), 24.7A (Tc) - 25.5mOhm @ 10A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1330 pF @ 50 V - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA88EP-T1_BE3

SQJA88EP-T1_BE3

N-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
3,064 -

RFQ

SQJA88EP-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 7mOhm @ 8A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ860EP-T1_BE3

SQJ860EP-T1_BE3

N-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
2,081 -

RFQ

SQJ860EP-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V 2.5V @ 250µA 55 nC @ 10 V ±20V 2700 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS4604DN-T1-GE3

SIS4604DN-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix
3,836 -

RFQ

SIS4604DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 14.6A (Ta), 44.4A (Tc) 7.5V, 10V 9.5mOhm @ 10A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 960 pF @ 30 V - 3.6W (Ta), 33.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQS840EN-T1_BE3

SQS840EN-T1_BE3

N-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
3,534 -

RFQ

SQS840EN-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Tc) 4.5V, 10V 20mOhm @ 7.5A, 10V 2.5V @ 250µA 22.5 nC @ 10 V ±20V 1031 pF @ 20 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS486CENW-T1_GE3

SQS486CENW-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix
2,159 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Tc) 4.5V, 10V 5.1mOhm @ 10A, 10V 2.2V @ 250µA 53 nC @ 10 V ±20V 2950 pF @ 25 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM70N04-07L-E3

SUM70N04-07L-E3

MOSFET N-CH 40V 70A TO263

Vishay Siliconix
2,475 -

RFQ

SUM70N04-07L-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 7.4mOhm @ 30A, 10V 3V @ 250µA 75 nC @ 10 V ±20V 2800 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM75N15-18P-E3

SUM75N15-18P-E3

MOSFET N-CH 150V 75A TO263

Vishay Siliconix
3,298 -

RFQ

SUM75N15-18P-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 75A (Tc) 10V 18mOhm @ 20A, 10V 4.5V @ 250µA 100 nC @ 10 V ±20V 4180 pF @ 75 V - 3.12W (Ta), 312.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUM90N06-5M5P-E3

SUM90N06-5M5P-E3

MOSFET N-CH 60V 90A TO263

Vishay Siliconix
3,066 -

RFQ

SUM90N06-5M5P-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 5.5mOhm @ 20A, 10V 4.5V @ 250µA 120 nC @ 10 V ±20V 4700 pF @ 30 V - 3.75W (Ta), 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM90N08-7M6P-E3

SUM90N08-7M6P-E3

MOSFET N-CH 75V 90A TO263

Vishay Siliconix
3,434 -

RFQ

SUM90N08-7M6P-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 7.6mOhm @ 30A, 10V 4.8V @ 250µA 90 nC @ 10 V ±20V 3528 pF @ 30 V - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM90P10-19-E3

SUM90P10-19-E3

MOSFET P-CH 100V 90A TO263

Vishay Siliconix
3,974 -

RFQ

SUM90P10-19-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 19mOhm @ 20A, 10V 4.5V @ 250µA 330 nC @ 10 V ±20V 12000 pF @ 50 V - 13.6W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUP18N15-95-E3

SUP18N15-95-E3

MOSFET N-CH 150V 18A TO220-3

Vishay Siliconix
3,569 -

RFQ

SUP18N15-95-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 6V, 10V 95mOhm @ 15A, 10V 2V @ 250µA (Min) 25 nC @ 10 V ±20V 900 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP28N15-52-E3

SUP28N15-52-E3

MOSFET N-CH 150V 28A TO220AB

Vishay Siliconix
3,920 -

RFQ

SUP28N15-52-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 28A (Tc) 6V, 10V 52mOhm @ 5A, 10V 4.5V @ 250µA 40 nC @ 10 V ±20V 1725 pF @ 25 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP36N20-54P-E3

SUP36N20-54P-E3

MOSFET N-CH 200V 36A TO220AB

Vishay Siliconix
2,895 -

RFQ

SUP36N20-54P-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 36A (Tc) 10V, 15V 53mOhm @ 20A, 15V 4.5V @ 250µA 127 nC @ 15 V ±25V 3100 pF @ 25 V - 3.12W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP40N10-30-GE3

SUP40N10-30-GE3

MOSFET N-CH 100V 38.5A TO220AB

Vishay Siliconix
2,713 -

RFQ

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 38.5A (Tc) 6V, 10V 30mOhm @ 15A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 2400 pF @ 25 V - 3.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP40P10-43-GE3

SUP40P10-43-GE3

MOSFET P-CH 100V 36A TO220AB

Vishay Siliconix
2,882 -

RFQ

SUP40P10-43-GE3

Ficha técnica

Tube TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4.5V, 10V 43mOhm @ 10A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 4600 pF @ 50 V - 2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP45N03-13L-E3

SUP45N03-13L-E3

MOSFET N-CH 30V 45A TO220AB

Vishay Siliconix
2,269 -

RFQ

SUP45N03-13L-E3

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 4.5V, 10V 13mOhm @ 45A, 10V 3V @ 250µA 70 nC @ 10 V ±10V 2730 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP60N02-4M5P-E3

SUP60N02-4M5P-E3

MOSFET N-CH 20V 60A TO220AB

Vishay Siliconix
2,702 -

RFQ

SUP60N02-4M5P-E3

Ficha técnica

Tube TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 3V @ 250µA 50 nC @ 4.5 V ±20V 5950 pF @ 10 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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