Transistores - FET, MOSFET - RF

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
BF904,235

BF904,235

BF904 - N-CHANNEL DUAL-GATE MOSF

NXP USA Inc.
2,442 -

RFQ

BF904,235

Ficha técnica

Bulk * Active - - - - - - - - -
ON5452,518

ON5452,518

NEXPERIA ON5452 - RF POWER MOSFE

NXP USA Inc.
3,402 -

RFQ

ON5452,518

Ficha técnica

Bulk * Active - - - - - - - - -
A2T08VD020NT1

A2T08VD020NT1

AIRFAST RF POWER LDMOS TRANSISTO

NXP USA Inc.
3,922 -

RFQ

A2T08VD020NT1

Ficha técnica

Tape & Reel (TR) - Active LDMOS 728MHz ~ 960MHz 19.1dB 48 V 10µA - 40 mA 18W 105 V
A2T27S020NR1

A2T27S020NR1

AIRFAST RF POWER LDMOS TRANSISTO

NXP USA Inc.
2,571 -

RFQ

A2T27S020NR1

Ficha técnica

Tape & Reel (TR) - Active LDMOS 400MHz ~ 2.7GHz 21dB 28 V 10µA - 185 mA 20W 65 V
AFT05MS031GNR1

AFT05MS031GNR1

FET RF 40V 520MHZ TO270-2G

NXP USA Inc.
3,732 -

RFQ

AFT05MS031GNR1

Ficha técnica

Tape & Reel (TR) - Active LDMOS 520MHz 17.7dB 13.6 V - - 10 mA 31W 40 V
A5G26S004NT6

A5G26S004NT6

GAN DRIVER DFN4.5X4.0 6L

NXP USA Inc.
3,391 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - -
A5G35S004NT6

A5G35S004NT6

AIRFAST RF POWER GAN TRANSISTOR

NXP USA Inc.
3,763 -

RFQ

A5G35S004NT6

Ficha técnica

Tape & Reel (TR) - Active - 3.3GHz ~ 4.3GHz 16.9dB 48 V - - 12 mA 24.5dBm 125 V
AFT27S012NT1

AFT27S012NT1

AIRFAST RF POWER LDMOS TRANSISTO

NXP USA Inc.
2,640 -

RFQ

AFT27S012NT1

Ficha técnica

Tape & Reel (TR) - Active LDMOS 728MHz ~ 2.7GHz 20.9dB 28 V 10µA - 90 mA 13W 65 V
A5G37H110NT4

A5G37H110NT4

AIRFAST RF POWER GAN TRANSISTOR

NXP USA Inc.
3,911 -

RFQ

A5G37H110NT4

Ficha técnica

Tape & Reel (TR) - Active - 3.6GHz ~ 3.8GHz 15.1dB 48 V - - 70 mA 13.5W 125 V
A5G35S008NT6

A5G35S008NT6

AIRFAST RF POWER GAN TRANSISTOR

NXP USA Inc.
3,633 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - -
A2T08VD021NT1

A2T08VD021NT1

AF3IC 800MHZ 20W PQFN8X8

NXP USA Inc.
2,168 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - -
AFT05MP075GNR1

AFT05MP075GNR1

FET RF 2CH 40V 520MHZ TO270-4

NXP USA Inc.
2,439 -

RFQ

AFT05MP075GNR1

Ficha técnica

Tape & Reel (TR) - Active LDMOS (Dual) 520MHz 18.5dB 12.5 V - - 400 mA 70W 40 V
MHT1803A

MHT1803A

300W 200MHZ TO-247-3L

NXP USA Inc.
2,313 -

RFQ

Bulk,Tray * Active - - - - - - - - -
MHT1803B

MHT1803B

300W 200MHZ TO-247-3L

NXP USA Inc.
3,831 -

RFQ

Bulk,Tray * Active - - - - - - - - -
MMRF1015GNR1

MMRF1015GNR1

FET RF 68V 960MHZ

NXP USA Inc.
3,689 -

RFQ

MMRF1015GNR1

Ficha técnica

Tape & Reel (TR) - Active LDMOS 960MHz 18dB 28 V - - 125 mA 10W 68 V
AFT09MP055GNR1

AFT09MP055GNR1

FET RF 2CH 40V 870MHZ TO-270

NXP USA Inc.
3,128 -

RFQ

AFT09MP055GNR1

Ficha técnica

Tape & Reel (TR) - Active LDMOS 870MHz 15.7dB 12.5 V - - 550 mA 1W 40 V
A5G38H045NT4

A5G38H045NT4

DMS GAN DFN7X6.5 6L

NXP USA Inc.
2,573 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - -
AFT09MP055NR1

AFT09MP055NR1

FET RF 2CH 40V 870MHZ TO-270

NXP USA Inc.
3,481 -

RFQ

AFT09MP055NR1

Ficha técnica

Tape & Reel (TR) - Active LDMOS 870MHz 15.7dB 12.5 V - - 550 mA 1W 40 V
A3T09S100NR1

A3T09S100NR1

AIRFAST RF POWER LDMOS TRANSISTO

NXP USA Inc.
3,685 -

RFQ

A3T09S100NR1

Ficha técnica

Tape & Reel (TR) - Active LDMOS 136MHz ~ 941MHz 22.8dB 28 V 10µA - 450 mA 100W 65 V
A5G23H065NT4

A5G23H065NT4

AIRFAST RF POWER GAN TRANSISTOR

NXP USA Inc.
3,982 -

RFQ

A5G23H065NT4

Ficha técnica

Tape & Reel (TR) - Active - 2.3GHz ~ 2.4GHz 15.5dB 48 V - - 30 mA 8.8W 125 V
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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