Transistores - FET, MOSFET - RF

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus TransistorType Frequency Gain Voltage-Test CurrentRating(Amps) NoiseFigure Current-Test Power-Output Voltage-Rated
2SK3557-6-TB-E

2SK3557-6-TB-E

RF MOSFET N-CH JFET 5V 3CP

onsemi
2,723 -

RFQ

2SK3557-6-TB-E

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel JFET 1kHz - 5 V 50mA 1dB 1 mA 200mW 15 V
CE3514M4-C2

CE3514M4-C2

RF MOSFET PHEMT FET 2V

CEL
2,204 -

RFQ

CE3514M4-C2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active pHEMT FET 12GHz 12.2dB 2 V 68mA 0.62dB 15 mA 125mW 4 V
CE3512K2

CE3512K2

RF FET 4V 12GHZ 4MICROX

CEL
2,851 -

RFQ

CE3512K2

Ficha técnica

Strip - Active pHEMT FET 12GHz 13.7dB 2 V 15mA 0.5dB 10 mA 125mW 4 V
AFT09MS007NT1

AFT09MS007NT1

FET RF 30V 870MHZ PLD1.5W

NXP USA Inc.
3,643 -

RFQ

AFT09MS007NT1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 870MHz 15.2dB 7.5 V - - 100 mA 7.3W 30 V
AFT05MS031NR1

AFT05MS031NR1

FET RF 40V 520MHZ TO-270-2

NXP USA Inc.
3,662 -

RFQ

AFT05MS031NR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 520MHz 17.7dB 13.6 V - - 10 mA 31W 40 V
BLM9D1822-30BZ

BLM9D1822-30BZ

BLM9D1822-30B/SOT1462/REELDP

Ampleon USA Inc.
3,381 -

RFQ

BLM9D1822-30BZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 1.8GHz ~ 2.2GHz 29.3dB 28 V 1.4µA - 110 mA 45.9dBm 65 V
AFT09MS031GNR1

AFT09MS031GNR1

FET RF 40V 870MHZ TO270-2G

NXP USA Inc.
3,917 -

RFQ

AFT09MS031GNR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 870MHz 17.2dB 13.6 V - - 500 mA 31W 40 V
AFT05MP075NR1

AFT05MP075NR1

FET RF 2CH 40V 520MHZ TO270-4

NXP USA Inc.
3,445 -

RFQ

AFT05MP075NR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual) 520MHz 18.5dB 12.5 V - - 400 mA 70W 40 V
BLP10H605AZ

BLP10H605AZ

RF FET LDMOS 104V 22DB 12VDFN

Ampleon USA Inc.
185 -

RFQ

BLP10H605AZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual), Common Source 860MHz 22.4dB 50 V - - 30 mA 5W 104 V
MRF101AN

MRF101AN

RF TRANSISTOR 100W TO-220

NXP USA Inc.
508 -

RFQ

MRF101AN

Ficha técnica

Tube - Active LDMOS 1.8MHz ~ 250MHz 21.1dB 50 V 10µA - 100 mA 115W 133 V
MRFE6VS25GNR1

MRFE6VS25GNR1

RF MOSFET LDMOS 50V TO270-2 GULL

NXP USA Inc.
3,474 -

RFQ

MRFE6VS25GNR1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 512MHz 25.4dB 50 V - - 10 mA 25W 133 V
CGH40006S

CGH40006S

RF MOSFET HEMT 28V 6QFN

Wolfspeed, Inc.
3,032 -

RFQ

CGH40006S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) GaN Active HEMT 0Hz ~ 6GHz 12dB 28 V - - 100 mA 8W 84 V
MRF160

MRF160

FET RF 65V 500MHZ 249-06

MACOM Technology Solutions
105 -

RFQ

MRF160

Ficha técnica

Tray - Active N-Channel 30MHz ~ 500MHz 18dB 28 V 1A - 50 mA 4W 65 V
BLP05H6350XRGY

BLP05H6350XRGY

RF FET LDMOS 135V 27DB SOT12242

Ampleon USA Inc.
204 -

RFQ

BLP05H6350XRGY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS (Dual), Common Source 108MHz 27dB 50 V - - 100 mA 350W 135 V
MRF137

MRF137

FET RF 65V 400MHZ 211-07

MACOM Technology Solutions
3,946 -

RFQ

MRF137

Ficha técnica

Tray - Active N-Channel 150MHz ~ 400MHz 7.7dB ~ 16dB 28 V 5A 1.5dB 25 mA 30W 65 V
CGHV27030S

CGHV27030S

RF MOSFET HEMT 50V 12DFN

Wolfspeed, Inc.
2,741 -

RFQ

CGHV27030S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) GaN Active HEMT 6GHz 20.4dB 50 V - - 130 mA 30W 125 V
ARF460AG

ARF460AG

FET RF N-CH 500V 14A TO247

Microchip Technology
355 -

RFQ

ARF460AG

Ficha técnica

Tube - Active N-Channel 40.68MHz 15dB 125 V 14A - 50 mA - 500 V
CGH40006P

CGH40006P

RF MOSFET HEMT 28V 440109

Wolfspeed, Inc.
412 -

RFQ

CGH40006P

Ficha técnica

Tray GaN Active HEMT 0Hz ~ 6GHz 13dB 28 V 3.5A - 100 mA 8W 84 V
CGH40010F

CGH40010F

RF MOSFET HEMT 28V 440166

Wolfspeed, Inc.
2,608 -

RFQ

CGH40010F

Ficha técnica

Tray GaN Not For New Designs HEMT 0Hz ~ 6GHz 14.5dB 28 V 3.5A - 200 mA 12.5W 84 V
MRFE6VS25LR5

MRFE6VS25LR5

FET RF 133V 512MHZ NI360L

NXP USA Inc.
752 -

RFQ

MRFE6VS25LR5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active LDMOS 512MHz 25.9dB 50 V - - 10 mA 25W 133 V
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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