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Transistores - FET, MOSFET - RF

Número de parte del fabricante	Disponibilidad	Precio	Cantidad	Ficha técnica	Packaging	Series	ProductStatus	TransistorType	Frequency	Gain	Voltage-Test	CurrentRating(Amps)	NoiseFigure	Current-Test	Power-Output	Voltage-Rated
BLF645,112 RF FET LDMOS 65V 16DB SOT540A Ampleon USA Inc.	3,315	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS (Dual), Common Source	1.3GHz	16.5dB	32 V	32A	-	900 mA	100W	65 V
ART1K6FHU ART1K6FH/SOT539/TRAY Ampleon USA Inc.	739	-	RFQ		Tray	ART	Active	LDMOS (Dual), Common Source	1MHz ~ 425MHz	28dB	55 V	1.2µA	-	50 mA	1600W	177 V
BLF188XRU RF FET LDMOS 135V 24.4DB SOT539A Ampleon USA Inc.	3,398	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS (Dual), Common Source	108MHz	24.4dB	50 V	-	-	40 mA	1400W	135 V
ART2K0FEU ART2K0FE/SOT539/TRAY Ampleon USA Inc.	307	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS (Dual), Common Source	400MHz	28.9dB	65 V	2.8µA	-	100 mA	2000W	200 V
BLF647P,112 RF FET LDMOS 65V 18DB SOT1121A Ampleon USA Inc.	182	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS (Dual), Common Source	1.3GHz	18dB	32 V	-	-	100 mA	200W	65 V
BLF989EU BLF989E/SOT539/TRAY Ampleon USA Inc.	2,755	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS (Dual), Common Source	470MHz ~ 700MHz	20dB	50 V	2.8µA	-	600 mA	1000W	108 V
BLF888A,112 RF FET LDMOS 110V 21DB SOT539A Ampleon USA Inc.	168	-	RFQ	Ficha técnica	Tray	-	Not For New Designs	LDMOS (Dual), Common Source	860MHz	21dB	50 V	-	-	1.3 A	600W	110 V
BLF189XRAU BLF189XRA/SOT539/TRAY Ampleon USA Inc.	2,554	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS (Dual), Common Source	500MHz	26.2dB	50 V	2.8µA	-	150 mA	1700W	135 V
BLF574,112 RF FET LDMOS 110V 26.5DB SOT539A Ampleon USA Inc.	3,816	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS (Dual), Common Source	225MHz	26.5dB	50 V	56A	-	1 A	400W	110 V
BLF578XR,112 RF MOSFET LDMOS DL 50V SOT539A Ampleon USA Inc.	3,330	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS (Dual), Common Source	225MHz	23.5dB	50 V	-	-	40 mA	1400W	110 V
BLA9H0912LS-700GU BLA9H0912LS-700G/SOT502/TRAY Ampleon USA Inc.	3,410	-	RFQ	Ficha técnica	Tray	-	Active	LDMOS	960MHz ~ 1.215GHz	20dB	50 V	2.8µA	-	100 mA	700W	106 V
MMBF4416A JFET N-CH 35V 15MA SOT23 onsemi	2,365	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel JFET	400MHz	-	15 V	15mA	4dB	5 mA	-	35 V
3SK293(TE85L,F) FET RF 12.5V 800MHZ USQ Toshiba Semiconductor and Storage	3,879	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel Dual Gate	800MHz	22dB	6 V	30mA	2.5dB	10 mA	-	12.5 V
MMBFJ211 JFET N-CH 25V 20MA SOT23 onsemi	2,303	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel JFET	-	-	-	20mA	-	-	-	25 V
J211-D74Z JFET N-CH 25V 20MA TO92 onsemi	3,876	-	RFQ	Ficha técnica	Cut Tape (CT),Tape & Box (TB)	-	Active	N-Channel JFET	-	-	-	20mA	-	-	-	25 V
PTVA101K02EV-V1-R0 IC AMP RF LDMOS H-36275-4 Wolfspeed, Inc.	2,787	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	1.03GHz ~ 1.09GHz	21dB	50 V	-	-	150 mA	900W	105 V
GTVA101K42EV-V1-R0 GAN HEMT 50V 1400W 0.96-1.4GHZ Wolfspeed, Inc.	140	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	GaN	Active	HEMT	960MHz ~ 1.4GHz	17dB	50 V	-	-	83.6 mA	1400W	125 V
MRFE6VP61K25HSR5 FET RF 2CH 133V 230MHZ NI-1230S NXP USA Inc.	100	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS (Dual)	230MHz	24dB	50 V	-	-	100 mA	1250W	133 V
AFT27S006NT1 RF MOSFET LDMOS 28V PLD1.5W NXP USA Inc.	2,470	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	2.17GHz	22dB	28 V	-	-	70 mA	28.8dBm	65 V
MW6S010GNR1 RF MOSFET LDMOS 28V TO270-2 GULL NXP USA Inc.	566	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	-	Active	LDMOS	960MHz	18dB	28 V	-	-	125 mA	10W	68 V