Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
2SJ653-CB11-ON

2SJ653-CB11-ON

FOR 60V MOTOR DRIVERS

onsemi
2,370 -

RFQ

2SJ653-CB11-ON

Ficha técnica

Bulk * Active - - - - - - - - - - -
UC2705D/81278

UC2705D/81278

BUFFER/INVERTER BASED MOSFET DRI

Unitrode
3,865 -

RFQ

UC2705D/81278

Ficha técnica

Bulk * Active - - - - - - - - - - -
SK3065

SK3065

RF MIXER AND IF STAGES

Harris Corporation
295 -

RFQ

SK3065

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Standard 20V 50mA - - - - 330mW - Through Hole
FS50KM-2#E52

FS50KM-2#E52

DISCRETE / POWER MOSFET

Renesas Electronics America Inc
733 -

RFQ

Bulk * Active - - - - - - - - - - -
FS50KM-06-AX#E51

FS50KM-06-AX#E51

DISCRETE / POWER MOSFET

Renesas Electronics America Inc
522 -

RFQ

Bulk * Active - - - - - - - - - - -
RJK03C0DPA-WS#J5A

RJK03C0DPA-WS#J5A

N-CHANNEL POWER SWITCHING

Renesas Electronics America Inc
2,212 -

RFQ

Bulk * Active - - - - - - - - - - -
FDI9406

FDI9406

110A, 40V, N CHANNEL, MOSFET, T

Fairchild Semiconductor
3,465 -

RFQ

Bulk * Active - - - - - - - - - - -
2SK2596BXTL-E

2SK2596BXTL-E

ULTRA HIGH FREQ BAND, N-CHANNEL

Renesas Electronics America Inc
2,689 -

RFQ

2SK2596BXTL-E

Ficha técnica

Bulk * Active - - - - - - - - - - -
IRFHE4250DTRPBF

IRFHE4250DTRPBF

HEXFET POWER MOSFET

International Rectifier
3,052 -

RFQ

IRFHE4250DTRPBF

Ficha técnica

Bulk HEXFET® Active 2 N-Channel (Dual) Standard 25V 86A (Tc), 303A (Tc) 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V 2.1V @ 35µA, 2.1V @ 100µA 20nC @ 4.5V, 53nC @ 4.5V 1735pF @ 13V, 4765pF @ 13V 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9640S2497

IRF9640S2497

11A, 200V, 0.500 OHM, P-CHANNEL

Harris Corporation
250 -

RFQ

Bulk * Active - - - - - - - - - - -
2SK1626-E

2SK1626-E

5A, 450V, N-CHANNEL MOSFET

Renesas Electronics America Inc
709 -

RFQ

2SK1626-E

Ficha técnica

Bulk * Active - - - - - - - - - - -
NP80N03MDE-S18-AY

NP80N03MDE-S18-AY

80A, 30V, 0.011OHM, N-CHANNEL

NEC Corporation
700 -

RFQ

NP80N03MDE-S18-AY

Ficha técnica

Bulk * Active - - - - - - - - - - -
2SK2059L-E

2SK2059L-E

3A, 600V, N-CHANNEL MOSFET

Renesas Electronics America Inc
665 -

RFQ

2SK2059L-E

Ficha técnica

Bulk * Active - - - - - - - - - - -
FX30KMJ-2#B00

FX30KMJ-2#B00

HIGH SPEED SWITCHING P CHANNEL

Renesas Electronics America Inc
215 -

RFQ

Bulk * Active - - - - - - - - - - -
FDB3652SB82059

FDB3652SB82059

1-ELEMENT, N-CHANNEL

Fairchild Semiconductor
500 -

RFQ

Bulk * Active - - - - - - - - - - -
FDP047N08-F10

FDP047N08-F10

164A, 75V, N-CHANNEL, MOSFET

Fairchild Semiconductor
432 -

RFQ

Bulk * Active - - - - - - - - - - -
FS50KM-2-J2#E52

FS50KM-2-J2#E52

DISCRETE / POWER MOSFET

Renesas Electronics America Inc
884 -

RFQ

Bulk * Active - - - - - - - - - - -
SPA20N60CFD

SPA20N60CFD

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
111 -

RFQ

SPA20N60CFD

Ficha técnica

Bulk * Active - - - - - - - - - - -
FS70UMJ-06F

FS70UMJ-06F

70A, 60V, N-CHANNEL MOSFET

NEC Corporation
288 -

RFQ

FS70UMJ-06F

Ficha técnica

Bulk * Active - - - - - - - - - - -
2SJ413-TH-ON

2SJ413-TH-ON

P-CHANNEL SILICON MOSFET

onsemi
300 -

RFQ

Bulk * Active - - - - - - - - - - -
Total 5629 Record«Prev1... 4748495051525354...282Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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