Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
2SK2725-E

2SK2725-E

5A, 500V, N-CHANNEL MOSFET

Renesas Electronics America Inc
178 -

RFQ

2SK2725-E

Ficha técnica

Bulk * Active - - - - - - - - - - -
FS50UMJ-3

FS50UMJ-3

50A, 150V, N-CHANNEL MOSFET

Renesas Electronics America Inc
845 -

RFQ

FS50UMJ-3

Ficha técnica

Bulk * Active - - - - - - - - - - -
FS70KM-06#B00

FS70KM-06#B00

70A, 100V, N-CHANNEL MOSFET

Renesas Electronics America Inc
115 -

RFQ

Bulk * Active - - - - - - - - - - -
IRF9133

IRF9133

AUTOMOTIVE HEXFET P-CHANNEL POWE

International Rectifier
200 -

RFQ

IRF9133

Ficha técnica

Bulk * Active - - - - - - - - - - -
SK3991

SK3991

N-CHANNEL POWER MOSFET

Harris Corporation
986 -

RFQ

SK3991

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Standard 25V 30mA - - - - 360mW - Through Hole
FCH041N65F

FCH041N65F

N-CHANNEL, MOSFET

Fairchild Semiconductor
900 -

RFQ

Bulk * Active - - - - - - - - - - -
BUZ60BU

BUZ60BU

400V, N-CHANNEL POWER MOSFET

Harris Corporation
200 -

RFQ

Bulk * Active - - - - - - - - - - -
MSC017SMA120B4

MSC017SMA120B4

MOSFET SIC 1200V 17 MOHM TO-247

Microchip Technology
2,119 -

RFQ

MSC017SMA120B4

Ficha técnica

Bulk - Active - - - - - - - - - - -
RFF70N06/3

RFF70N06/3

25A, 60V, 0.025 OHMS, N CHANNEL

Harris Corporation
2,343 -

RFQ

Bulk * Active - - - - - - - - - - -
MSCSM170DUM23T3AG

MSCSM170DUM23T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
2,094 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM70DUM10T3AG

MSCSM70DUM10T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
3,931 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170DUM15T3AG

MSCSM170DUM15T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
3,793 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1700V (1.7kV) 181A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 862W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170AM23CT1AG

MSCSM170AM23CT1AG

PM-MOSFET-SIC-SBD-SP1F

Microchip Technology
2,693 -

RFQ

MSCSM170AM23CT1AG

Ficha técnica

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120DUM11T3AG

MSCSM120DUM11T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
2,088 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1067W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170DUM11T3AG

MSCSM170DUM11T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
3,371 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1140W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120DUM08T3AG

MSCSM120DUM08T3AG

PM-MOSFET-SIC-SP3F

Microchip Technology
3,064 -

RFQ

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V 12100pF @ 1000V 1409W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170AM11CT3AG

MSCSM170AM11CT3AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
3,509 -

RFQ

MSCSM170AM11CT3AG

Ficha técnica

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1.14kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MRF7S15100HSR3128

MRF7S15100HSR3128

N CHANNEL ENHANCEMENT-MODE RF PO

NXP USA Inc.
3,533 -

RFQ

MRF7S15100HSR3128

Ficha técnica

Bulk * Active - - - - - - - - - - -
MSCSM170DUM058AG

MSCSM170DUM058AG

PM-MOSFET-SIC-SP6C

Microchip Technology
3,208 -

RFQ

MSCSM170DUM058AG

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1642W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM170HM23CT3AG

MSCSM170HM23CT3AG

PM-MOSFET-SIC-SBD-SP3F

Microchip Technology
2,814 -

RFQ

Bulk - Active 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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