Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
IRF620R4587

IRF620R4587

5.0A 200V 0.800 OHM N-CHANNEL

Harris Corporation
3,062 -

RFQ

Bulk * Active - - - - - - - - - - -
FDMS8860AS

FDMS8860AS

N-CHANNEL POWERTRENCH MOSFET

Fairchild Semiconductor
3,716 -

RFQ

Bulk * Active - - - - - - - - - - -
CPH5614-TL-E-ON

CPH5614-TL-E-ON

N-CHANNEL SILICON MOSFET

onsemi
3,392 -

RFQ

Bulk * Active - - - - - - - - - - -
FDMJ1023PZ

FDMJ1023PZ

SMALL SIGNAL P-CHANNEL MOSFET

Fairchild Semiconductor
3,814 -

RFQ

FDMJ1023PZ

Ficha técnica

Bulk PowerTrench® Obsolete 2 P-Channel (Dual) Logic Level Gate 20V 2.9A 112mOhm @ 2.9A, 4.5V 1V @ 250µA 6.5nC @ 4.5V 400pF @ 10V 700mW -55°C ~ 150°C (TJ) Surface Mount
SI6953DQ

SI6953DQ

P-CHANNEL MOSFET

Fairchild Semiconductor
2,893 -

RFQ

SI6953DQ

Ficha técnica

Bulk PowerTrench® Active 2 P-Channel (Dual) Standard 20V 1.9A (Ta) 170mOhm @ 1.9A, 10V 3V @ 250µA 10nC @ 10V 218pF @ 10V 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
ECH8604-TL-E

ECH8604-TL-E

N-CHANNEL MOSFET

onsemi
3,022 -

RFQ

Bulk * Active - - - - - - - - - - -
BSO211PH

BSO211PH

3.2A, 20V, 0.067OHM, 2-ELEMENT

Infineon Technologies
2,608 -

RFQ

BSO211PH

Ficha técnica

Bulk OptiMOS™ P Active 2 P-Channel (Dual) Logic Level Gate, 2.5V Drive 20V 4A (Ta) 67mOhm @ 4.6A, 4.5V 1.2V @ 25µA 10nC @ 4.5V 1095pF @ 15V 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR1109A

IRFR1109A

PFET, 4.7A I(D), 100V, 0.54OHM

Harris Corporation
3,911 -

RFQ

IRFR1109A

Ficha técnica

Bulk - Active - - - - - - - - - - -
SI6955DQ

SI6955DQ

P-CHANNEL MOSFET

Fairchild Semiconductor
2,431 -

RFQ

SI6955DQ

Ficha técnica

Bulk PowerTrench® Active 2 P-Channel (Dual) Standard 30V 2.5A (Ta) 85mOhm @ 2.5A, 10V 3V @ 250µA 15nC @ 10V 298pF @ 10V 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FSS248-TL-E

FSS248-TL-E

N-CHANNEL MOSFET

onsemi
3,088 -

RFQ

Bulk * Active - - - - - - - - - - -
FDM2509NZ

FDM2509NZ

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
2,149 -

RFQ

FDM2509NZ

Ficha técnica

Bulk PowerTrench® Obsolete 2 N-Channel (Dual) Logic Level Gate 20V 8.7A 18mOhm @ 8.7A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1200pF @ 10V 800mW -55°C ~ 150°C (TJ) Surface Mount
FSS248-TL-E-SY

FSS248-TL-E-SY

N-CHANNEL MOSFET

Sanyo
3,481 -

RFQ

Bulk * Active - - - - - - - - - - -
SI4920DY

SI4920DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
2,958 -

RFQ

SI4920DY

Ficha técnica

Bulk PowerTrench® Active 2 N-Channel (Dual) Logic Level Gate 30V 6A (Ta) 28mOhm @ 6A, 10V 3V @ 250µA 13nC @ 5V 830pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FW276-TL-2H

FW276-TL-2H

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
2,346 -

RFQ

FW276-TL-2H

Ficha técnica

Bulk - Obsolete 2 N-Channel (Dual) Logic Level Gate, 10V Drive 450V 700mA (Tc) 12.1Ohm @ 350mA, 10V 4.5V @ 1mA 3.7nC @ 10V 55pF @ 20V 1.6W (Tc) 150°C (TJ) Surface Mount
IPB13N03LBG

IPB13N03LBG

OPTLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
999 -

RFQ

Bulk * Active - - - - - - - - - - -
SI1016X-T1-GE3

SI1016X-T1-GE3

MOSFET N/P-CH 20V SC89-6

Vishay Siliconix
2,855 -

RFQ

SI1016X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N and P-Channel Logic Level Gate 20V 485mA, 370mA 700mOhm @ 600mA, 4.5V 1V @ 250µA 0.75nC @ 4.5V - 250mW -55°C ~ 150°C (TJ) Surface Mount
SI1034X-T1-GE3

SI1034X-T1-GE3

MOSFET 2N-CH 20V 0.18A SC89-6

Vishay Siliconix
3,734 -

RFQ

SI1034X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 20V 180mA 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75nC @ 4.5V - 250mW -55°C ~ 150°C (TJ) Surface Mount
FDG6322C

FDG6322C

MOSFET N/P-CH 25V SC70-6

onsemi
2,935 -

RFQ

FDG6322C

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Logic Level Gate 25V 220mA, 410mA 4Ohm @ 220mA, 4.5V 1.5V @ 250µA 0.4nC @ 4.5V 9.5pF @ 10V 300mW -55°C ~ 150°C (TJ) Surface Mount
SQ1922AEEH-T1_GE3

SQ1922AEEH-T1_GE3

MOSFET N-CH DUAL 20V .85A SOT-36

Vishay Siliconix
3,238 -

RFQ

SQ1922AEEH-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 20V 850mA (Tc) 300mOhm @ 400mA, 4.5V 2.5V @ 250µA 1.2nC @ 4.5V 60pF @ 10V 1.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UM6J1NTN

UM6J1NTN

MOSFET 2P-CH 30V 0.2A UMT6

Rohm Semiconductor
3,476 -

RFQ

UM6J1NTN

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 P-Channel (Dual) Logic Level Gate 30V 200mA 1.4Ohm @ 200mA, 10V 2.5V @ 1mA - 30pF @ 10V 150mW 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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