Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
BSM180D12P2C101

BSM180D12P2C101

MOSFET 2N-CH 1200V 180A MODULE

Rohm Semiconductor
2,503 -

RFQ

BSM180D12P2C101

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 23000pF @ 10V 1130W -40°C ~ 150°C (TJ) -
BSM180D12P3C007

BSM180D12P3C007

SIC POWER MODULE

Rohm Semiconductor
3,667 -

RFQ

BSM180D12P3C007

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Silicon Carbide (SiC) 1200V (1.2kV) 180A (Tc) - 5.6V @ 50mA - 900pF @ 10V 880W 175°C (TJ) Surface Mount
FF3MR12KM1PHOSA1

FF3MR12KM1PHOSA1

MEDIUM POWER 62MM

Infineon Technologies
2,494 -

RFQ

FF3MR12KM1PHOSA1

Ficha técnica

Tray CoolSiC™ Last Time Buy 2 N-Channel (Half Bridge) Standard 1200V (1.2kV) 375A (Tc) 2.83mOhm @ 375A, 15V 5.15V @ 168mA 1000nC @ 15V 29800pF @ 25V - -40°C ~ 150°C (TJ) Chassis Mount
MSCSM120AM042CT6LIAG

MSCSM120AM042CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
2,111 -

RFQ

MSCSM120AM042CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18100pF @ 1kV 2.031kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM042CD3AG

MSCSM120AM042CD3AG

PM-MOSFET-SIC-SBD~-D3

Microchip Technology
2,193 -

RFQ

MSCSM120AM042CD3AG

Ficha técnica

Box - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120TAM11CTPAG

MSCSM120TAM11CTPAG

PM-MOSFET-SIC-SBD~-SP6P

Microchip Technology
2,935 -

RFQ

MSCSM120TAM11CTPAG

Ficha técnica

Tube - Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM03CT6LIAG

MSCSM120AM03CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
2,180 -

RFQ

MSCSM120AM03CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 805A (Tc) 3.1mOhm @ 400A, 20V 2.8V @ 10mA 2320nC @ 20V 30200pF @ 1kV 3.215kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
BSM400D12P3G002

BSM400D12P3G002

1200V, 358A, HALF BRIDGE, FULL S

Rohm Semiconductor
3,798 -

RFQ

BSM400D12P3G002

Ficha técnica

Bulk - Active 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tc) - 5.6V @ 109.2mA - 17000pF @ 10V 1570W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
FF3MR12KM1HOSA1

FF3MR12KM1HOSA1

MEDIUM POWER 62MM

Infineon Technologies
3,904 -

RFQ

FF3MR12KM1HOSA1

Ficha técnica

Tray CoolSiC™ Last Time Buy 2 N-Channel (Half Bridge) Standard 1200V (1.2kV) 375A (Tc) 2.83mOhm @ 375A, 15V 5.15V @ 168mA 1000nC @ 15V 29800pF @ 25V - -40°C ~ 150°C (TJ) Chassis Mount
CSD87333Q3DT

CSD87333Q3DT

MOSFET 2N-CH 30V 15A 8VSON

Texas Instruments
325 -

RFQ

CSD87333Q3DT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 5V Drive 30V 15A 14.3mOhm @ 4A, 8V 1.2V @ 250µA 4.6nC @ 4.5V 662pF @ 15V 6W 125°C (TJ) Surface Mount
CSD87384MT

CSD87384MT

MOSFET 2N-CH 30V 30A 5PTAB

Texas Instruments
853 -

RFQ

CSD87384MT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active 2 N-Channel (Half Bridge) Logic Level Gate 30V 30A 7.7mOhm @ 25A, 8V 1.9V @ 250µA 9.2nC @ 4.5V 1150pF @ 15V 8W -55°C ~ 150°C (TJ) Surface Mount
APTC60DSKM24T3G

APTC60DSKM24T3G

MOSFET 2N-CH 600V 95A SP3

Microchip Technology
2,876 -

RFQ

APTC60DSKM24T3G

Ficha técnica

Tray CoolMOS™ Active 2 N Channel (Dual Buck Chopper) Super Junction 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) Chassis Mount
MCB40P1200LB-TUB

MCB40P1200LB-TUB

POWER MOSFET

IXYS
2,953 -

RFQ

MCB40P1200LB-TUB

Ficha técnica

Tube CoolMOS™ Active 2 N-Channel (Dual) Common Source Silicon Carbide (SiC) 1200V (1.2kV) 58A - - - - - - Surface Mount
MSCM20AM058G

MSCM20AM058G

PM-MOSFET-FREDFET-5-LP8

Microchip Technology
2,959 -

RFQ

MSCM20AM058G

Ficha técnica

Box - Active 2 N Channel (Phase Leg) Standard 200V 280A (Tc) - - - - - - Chassis Mount
FF6MR12KM1PHOSA1

FF6MR12KM1PHOSA1

MEDIUM POWER 62MM

Infineon Technologies
2,808 -

RFQ

FF6MR12KM1PHOSA1

Ficha técnica

Tray CoolSiC™ Last Time Buy 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 250A (Tc) 5.81mOhm @ 250A, 15V 5.15V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) Chassis Mount
5HP01M-TL-EX

5HP01M-TL-EX

MOSFET P-CH 50V 0.07A MCP3

onsemi
3,033 -

RFQ

Bulk * Active - - - - - - - - - - -
SCH1406-TL-E

SCH1406-TL-E

N-CHANNEL MOSFET

Sanyo
2,204 -

RFQ

Bulk * Active - - - - - - - - - - -
MCH6631-TL-E

MCH6631-TL-E

N CHANNEL AND P CHANNEL SILICON

onsemi
3,923 -

RFQ

Bulk * Active - - - - - - - - - - -
6LP04CH-TL-E-SY

6LP04CH-TL-E-SY

P-CHANNEL SILICON MOSFET

Sanyo
3,002 -

RFQ

6LP04CH-TL-E-SY

Ficha técnica

Bulk * Active - - - - - - - - - - -
PMN27XPEA,115

PMN27XPEA,115

4.4A, 20V, 6-ELEMENT, P CHANNEL

Nexperia USA Inc.
2,062 -

RFQ

PMN27XPEA,115

Ficha técnica

Bulk * Active - - - - - - - - - - -
Total 5629 Record«Prev1... 3738394041424344...282Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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