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0Transistores - FET, MOSFET - Arreglos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD83325LTMOSFET 2N-CH 12V 6PICOSTAR Texas Instruments |
975 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | 2 N-Channel (Dual) Common Drain | Standard | 12V | - | - | 1.25V @ 250µA | 10.9nC @ 4.5V | - | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
ZXMN2A04DN8TAMOSFET 2N-CH 20V 5.9A 8-SOIC Diodes Incorporated |
847 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.9A | 25mOhm @ 5.9A, 4.5V | 700mV @ 250µA (Min) | 22.1nC @ 5V | 1880pF @ 10V | 1.8W | -55°C ~ 150°C (TJ) | Surface Mount |
|
ALD1117PALMOSFET 2P-CH 10.6V 8DIP Advanced Linear Devices Inc. |
3,638 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD1105SBLMOSFET 2N/2P-CH 10.6V 14SOIC Advanced Linear Devices Inc. |
3,195 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD110800PCLMOSFET 4N-CH 10.6V 16DIP Advanced Linear Devices Inc. |
3,184 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD212900PALMOSFET 2N-CH 10.6V 0.08A 8DIP Advanced Linear Devices Inc. |
2,774 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 20mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD1102SALMOSFET 2P-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,153 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1101SALMOSFET 2N-CH 10.6V 8SOIC Advanced Linear Devices Inc. |
2,160 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD210800SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC Advanced Linear Devices Inc. |
3,953 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1102PALMOSFET 2P-CH 10.6V 8DIP Advanced Linear Devices Inc. |
2,725 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1103SBLMOSFET 2N/2P-CH 10.6V 14SOIC Advanced Linear Devices Inc. |
3,722 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD310700APCLMOSFET 4 P-CH 8V 16DIP Advanced Linear Devices Inc. |
3,693 | - |
RFQ |
Ficha técnica |
Tube | EPAD®, Zero Threshold™ | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole |
|
APTM50HM65FT3GMOSFET 4N-CH 500V 51A SP3 Microchip Technology |
3,116 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 500V | 51A | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
APTM50AM38STGMOSFET 2N-CH 500V 90A SP4 Microchip Technology |
3,074 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
MSCM20XM10T3XGPM-MOSFET-OTHER-SP3X Microchip Technology |
3,092 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 6 N-Channel (3-Phase Bridge) | Standard | 200V | 108A (Tc) | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 161nC @ 10V | 10700pF @ 50V | 341W (Tc) | -40°C ~ 125°C (Tc) | Chassis Mount |
|
MSCSM70AM10CT3AGPM-MOSFET-SIC-SBD~-SP3F Microchip Technology |
3,074 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount |
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|
MSCSM120HM31CT3AGPM-MOSFET-SIC-SBD~-SP3F Microchip Technology |
2,164 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 4 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
VMM650-01FMOSFET 2N-CH 100V 680A Y3-LI IXYS |
2,831 | - |
RFQ |
Ficha técnica |
Bulk | HiPerFET™ | Active | 2 N-Channel (Dual) | Standard | 100V | 680A | 2.2mOhm @ 500A, 10V | 4V @ 30mA | 1440nC @ 10V | - | - | -40°C ~ 150°C (TJ) | Chassis Mount |
|
MSCSM120TAM31CT3AGPM-MOSFET-SIC-SBD~-SP3F Microchip Technology |
2,236 | - |
RFQ |
Ficha técnica |
Tube | - | Active | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
BSM120C12P2C2011200V, 134A, CHOPPER, SILICON-CA Rohm Semiconductor |
3,797 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | 2 N-Channel | Silicon Carbide (SiC) | 1200V (1.2kV) | 134A (Tc) | - | 4V @ 22mA | - | 14000pF @ 10V | 935W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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