Transistores - FET, MOSFET - Arreglos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
SI4948BEY-T1-GE3

SI4948BEY-T1-GE3

MOSFET 2P-CH 60V 2.4A 8-SOIC

Vishay Siliconix
2,912 -

RFQ

SI4948BEY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 P-Channel (Dual) Logic Level Gate 60V 2.4A 120mOhm @ 3.1A, 10V 3V @ 250µA 22nC @ 10V - 1.4W -55°C ~ 175°C (TJ) Surface Mount
SI6913DQ-T1-E3

SI6913DQ-T1-E3

MOSFET 2P-CH 12V 4.9A 8TSSOP

Vishay Siliconix
2,399 -

RFQ

SI6913DQ-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 P-Channel (Dual) Logic Level Gate 12V 4.9A 21mOhm @ 5.8A, 4.5V 900mV @ 400µA 28nC @ 4.5V - 830mW -55°C ~ 150°C (TJ) Surface Mount
SQJ244EP-T1_GE3

SQJ244EP-T1_GE3

MOSFET DUAL N-CHA 40V PPAK SO-8L

Vishay Siliconix
2,384 -

RFQ

SQJ244EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Asymmetrical Standard 40V 20A (Tc), 60A (Tc) 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V 2.5V @ 250µA 20nC @ 10V, 45nC @ 10V 1200pF @ 25V, 2800pF @ 25V 27W (Tc), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7252DP-T1-GE3

SI7252DP-T1-GE3

MOSFET 2N-CH 100V 36.7A PPAK 8SO

Vishay Siliconix
2,721 -

RFQ

SI7252DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 100V 36.7A 18mOhm @ 15A, 10V 3.5V @ 250µA 27nC @ 10V 1170pF @ 50V 46W -55°C ~ 150°C (TJ) Surface Mount
SQJ960EP-T1_GE3

SQJ960EP-T1_GE3

MOSFET 2N-CH 60V 8A

Vishay Siliconix
2,456 -

RFQ

SQJ960EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 60V 8A 36mOhm @ 5.3A, 10V 2.5V @ 250µA 20nC @ 10V 735pF @ 25V 34W -55°C ~ 175°C (TJ) Surface Mount
SIZF906BDT-T1-GE3

SIZF906BDT-T1-GE3

DUAL N-CHANNEL 30 V (D-S) MOSFET

Vishay Siliconix
3,401 -

RFQ

SIZF906BDT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active 2 N-Channel (Dual), Schottky Standard 30V 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V 2.2V @ 250µA 49nC @ 10V, 165nC @ 10V 1630pF @ 15V, 5550pF @ 15V 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ960EL-T1_GE3

SQJQ960EL-T1_GE3

MOSFET 2 N-CH 60V POWERPAK8X8

Vishay Siliconix
3,725 -

RFQ

SQJQ960EL-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 60V 63A (Tc) 9mOhm @ 10A, 10V 2.5V @ 250µA 24nC @ 10V 1950pF @ 25V 71W -55°C ~ 175°C (TJ) Surface Mount
SI7220DN-T1-E3

SI7220DN-T1-E3

MOSFET 2N-CH 60V 3.4A 1212-8

Vishay Siliconix
2,981 -

RFQ

SI7220DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 60V 3.4A 60mOhm @ 4.8A, 10V 3V @ 250µA 20nC @ 10V - 1.3W -55°C ~ 150°C (TJ) Surface Mount
SQJQ910EL-T1_GE3

SQJQ910EL-T1_GE3

MOSFET 2 N-CH 100V POWERPAK8X8

Vishay Siliconix
3,343 -

RFQ

SQJQ910EL-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 100V 70A (Tc) 8.6mOhm @ 10A, 10V 2.5V @ 250µA 58nC @ 10V 2832pF @ 50V 187W -55°C ~ 175°C (TJ) Surface Mount
SQJQ906E-T1_GE3

SQJQ906E-T1_GE3

MOSFET 2 N-CH 40V POWERPAK8X8

Vishay Siliconix
2,963 -

RFQ

SQJQ906E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active 2 N-Channel (Dual) Standard 40V 95A (Tc) 3.3mOhm @ 5A, 10V 3.5V @ 250µA 42nC @ 10V 3600pF @ 20V 50W -55°C ~ 175°C (TJ) Surface Mount
SI1023X-T1-GE3

SI1023X-T1-GE3

MOSFET 2P-CH 20V 0.37A SC89-6

Vishay Siliconix
3,945 -

RFQ

SI1023X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 P-Channel (Dual) Logic Level Gate 20V 370mA 1.2Ohm @ 350mA, 4.5V 450mV @ 250µA (Min) 1.5nC @ 4.5V - 250mW -55°C ~ 150°C (TJ) Surface Mount
SI7942DP-T1-E3

SI7942DP-T1-E3

MOSFET 2N-CH 100V 3.8A PPAK SO-8

Vishay Siliconix
2,940 -

RFQ

SI7942DP-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 100V 3.8A 49mOhm @ 5.9A, 10V 4V @ 250µA 24nC @ 10V - 1.4W -55°C ~ 150°C (TJ) Surface Mount
SI7942DP-T1-GE3

SI7942DP-T1-GE3

MOSFET 2N-CH 100V 3.8A PPAK SO-8

Vishay Siliconix
3,500 -

RFQ

SI7942DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Logic Level Gate 100V 3.8A 49mOhm @ 5.9A, 10V 4V @ 250µA 24nC @ 10V - 1.4W -55°C ~ 150°C (TJ) Surface Mount
SQ3585EV-T1_GE3

SQ3585EV-T1_GE3

MOSFET N/P-CH 20V 6TSOP

Vishay Siliconix
2,680 -

RFQ

SQ3585EV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N and P-Channel Standard 20V 3.57A (Tc), 2.5A (Tc) 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V 1.5V @ 250µA 2.5nC @ 4.5V, 3.5nC @ 4.5V - 1.67W -55°C ~ 175°C (TJ) Surface Mount
SI1036X-T1-GE3

SI1036X-T1-GE3

MOSFET 2 N-CH 30V 610MA SC89-6

Vishay Siliconix
3,351 -

RFQ

SI1036X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Standard 30V 610mA (Ta) 540mOhm @ 500mA, 4.5V 1V @ 250µA 1.2nC @ 4.5V 36pF @ 15V 220mW -55°C ~ 150°C (TJ) Surface Mount
SI1539CDL-T1-GE3

SI1539CDL-T1-GE3

MOSFET N/P-CH 30V SOT363

Vishay Siliconix
3,617 -

RFQ

SI1539CDL-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N and P-Channel Logic Level Gate 30V 700mA, 500mA 388mOhm @ 600mA, 10V 2.5V @ 250µA 1.5nC @ 10V 28pF @ 15V 340mW -55°C ~ 150°C (TJ) Surface Mount
SI1967DH-T1-GE3

SI1967DH-T1-GE3

MOSFET 2P-CH 20V 1.3A SC70-6

Vishay Siliconix
3,490 -

RFQ

SI1967DH-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 P-Channel (Dual) Logic Level Gate 20V 1.3A 490mOhm @ 910mA, 4.5V 1V @ 250µA 4nC @ 8V 110pF @ 10V 1.25W -55°C ~ 150°C (TJ) Surface Mount
SI1967DH-T1-E3

SI1967DH-T1-E3

MOSFET 2P-CH 20V 1.3A SC70-6

Vishay Siliconix
3,477 -

RFQ

SI1967DH-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 P-Channel (Dual) Logic Level Gate 20V 1.3A 490mOhm @ 910mA, 4.5V 1V @ 250µA 4nC @ 8V 110pF @ 10V 1.25W -55°C ~ 150°C (TJ) Surface Mount
SI1035X-T1-GE3

SI1035X-T1-GE3

MOSFET N/P-CH 20V SC-89

Vishay Siliconix
2,148 -

RFQ

SI1035X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N and P-Channel Logic Level Gate 20V 180mA, 145mA 5Ohm @ 200mA, 4.5V 400mV @ 250µA (Min) 0.75nC @ 4.5V - 250mW -55°C ~ 150°C (TJ) Surface Mount
SIA918EDJ-T1-GE3

SIA918EDJ-T1-GE3

MOSFET 2N-CH 30V POWERPAK SC70-6

Vishay Siliconix
3,522 -

RFQ

SIA918EDJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active 2 N-Channel (Dual) Standard 30V 4.5A (Tc) 58mOhm @ 3A, 4.5V 900mV @ 250µA 5.5nC @ 4.5V - 7.8W -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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